X-On Electronics has gained recognition as a prominent supplier of SI7489DP-T1-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI7489DP-T1-GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SI7489DP-T1-GE3 Vishay

SI7489DP-T1-GE3 electronic component of Vishay
SI7489DP-T1-GE3 Vishay
SI7489DP-T1-GE3 MOSFETs
SI7489DP-T1-GE3  Semiconductors

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See Product Specifications
Part No. SI7489DP-T1-GE3
Manufacturer: Vishay
Category: MOSFETs
Description: P-Channel 100 V 28A (Tc) 5.2W (Ta), 83W (Tc) Surface Mount PowerPAK® SO-8
Datasheet: SI7489DP-T1-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3000: USD 1.304 ea
Line Total: USD 3912 
Availability - 23280
Ship by Fri. 09 May to Thu. 15 May
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
23280
Ship by Fri. 09 May to Thu. 15 May
MOQ : 3000
Multiples : 3000
3000 : USD 1.304

937
Ship by Fri. 16 May to Wed. 21 May
MOQ : 1
Multiples : 1
1 : USD 3.5468
10 : USD 2.2691
30 : USD 1.8223
100 : USD 1.5949
500 : USD 1.4941
1000 : USD 1.4483

23280
Ship by Fri. 09 May to Thu. 15 May
MOQ : 3000
Multiples : 3000
3000 : USD 1.304

2910
Ship by Fri. 09 May to Thu. 15 May
MOQ : 3000
Multiples : 3000
3000 : USD 1.3529
6000 : USD 1.3054

6475
Ship by Fri. 09 May to Thu. 15 May
MOQ : 72
Multiples : 1
72 : USD 3.6309

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Series
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Transistor Type
Forward Transconductance - Min
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the SI7489DP-T1-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI7489DP-T1-GE3 and other electronic components in the MOSFETs category and beyond.

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The Vishay SI7489DP-T1-GE3 is an P-Channel 100 V 28A (Tc) 5.2W (Ta), 83W (Tc) Surface Mount PowerPAK® SO-8. It is a strong MOSFET which provides a low RDS(on) of less than 7m? making it ideal for use in power switching applications. It features a reverse recovery time and has a 0.035V gate charge. This device is RoHs compliant and is AEC-Q101 qualified. It is also 175°C capable and has a high power and thermal dissipation for high efficiency and improved performance. The device also has low gate charge and drain-source resistance for high speed switching and low EMI. This device is perfect for load management, current sensing, AC/DC conversion, and power distribution applications.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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