SI7682DP-T1-E3 Vishay

SI7682DP-T1-E3 electronic component of Vishay

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X-On Electronics has gained recognition as a prominent supplier of SI7682DP-T1-E3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI7682DP-T1-E3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No.	SI7682DP-T1-E3
Manufacturer:	Vishay
Category:	MOSFETs
Description:	MOSFET 30V 20A 27.5W Small-footprint, low-loss, Digi-Key-Available, 30-V, 30A, Schottky-Barrier Rectifier
Datasheet:	SI7682DP-T1-E3 Datasheet (PDF)

Price (USD)

1: USD 0.743 ea
Line Total: USD 0.74

Availability : 0

Qty	Unit Price
1	$ 0.743
10	$ 0.7371
125	$ 0.6669
750	$ 0.5441
1500	$ 0.5207

SI7682DP-T1-E3 More Buying Options & Price Grid(s)

Availability

Price (USD)

Quantity

Availability 0

Ship by Mon. 11 Aug to Fri. 15 Aug

MOQ : 1
Multiples : 1

Qty	Unit Price
1	$ 0.743
10	$ 0.7371
125	$ 0.6669
750	$ 0.5441
1500	$ 0.5207

We are delighted to provide the SI7682DP-T1-E3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI7682DP-T1-E3 and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

The SI7682DP-T1-E3 is a dual-channel, high-speed MOSFET driver with built-in protection features from Vishay. It offers a fast switching speed of up to 400V/ns, adjustable dead time, and adjustable over-current protection. Its devices employ internal bootstrap circuitry to drive the upper n-channel MOSFET and feature an adjustable UVLO/OVP circuit. It also includes protection circuits against over-voltage conditions, short circuit, excessive output current, and part temperature. This device is offered in an SO-8EP package with a lead-free (RoHS-compliant) option available.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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Manufacturer Vishay Vishay
Product Category MOSFETs MOSFETs
RoHS - XON e e
Id - Continuous Drain Current 17.5 A 17.5 A
Vds - Drain-Source Breakdown Voltage 30 V 30 V
Rds On - Drain-Source Resistance 9 mOhms 9 mOhms
Transistor Polarity n - channel n - channel
Vgs - Gate-Source Breakdown Voltage 20 V 20 V
Minimum Operating Temperature - 55 C - 55 C
Maximum Operating Temperature + 150 C + 150 C
Pd - Power Dissipation 5 W 5 W
Mounting Style smd/smt smd/smt
Package / Case SO - 8 SO - 8
Packaging Reel Reel
Channel Mode enhancement enhancement
Configuration single single
Brand Vishay / Siliconix Vishay / Siliconix
Fall Time 10 ns 10 ns
Rise Time 82 ns 82 ns
Factory Pack Quantity : 3000 3000
Typical Turn-Off Delay Time 18 ns 18 ns