New Product Si7774DP Vishay Siliconix N-Channel 30 V (D-S) MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 a V (V) R ( ) Q (Typ.) I (A) DS DS(on) g D Definition 0.0038 at V = 10 V 60 SkyFET Monolithic TrenchFET GS 30 21.5 nC Power MOSFET and Schottky Diode 0.0047 at V = 4.5 V 60 GS 100 % R Tested g 100 % UIS Tested PowerPAK SO-8 Compliant to RoHS Directive 2002/95/EC APPLICATIONS S 6.15 mm VRM, POL, Server 5.15 mm 1 S D Notebook 2 S 3 - Low-Side G 4 D 8 D 7 D 6 Schottky Diode D G 5 N-Channel MOSFET Bottom View Ordering Information: Si7774DP-T1-GE3 (Lead (Pb)-free and Halogen-free) S ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol LimitUnit Drain-Source Voltage V 30 DS V Gate-Source Voltage V 20 GS a T = 25 C 60 C a T = 70 C 60 C Continuous Drain Current (T = 150 C) I J D b, c T = 25 C 27 A b, c T = 70 C 21 A A Pulsed Drain Current I 80 DM a T = 25 C 60 C Continuous Source-Drain Diode Current I S b, c T = 25 C 8 A Single Pulse Avalanche Current I 40 AS L = 0.1 mH E mJ Single Pulse Avalanche Energy 80 AS T = 25 C 48 C T = 70 C 31 C Maximum Power Dissipation P W D b, c T = 25 C 5.0 A b, c T = 70 C 3.2 A T , T Operating Junction and Storage Temperature Range - 55 to 150 J stg C d, e 260 Soldering Recommendations (Peak Temperature) THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b, f t 10 s R 20 25 Maximum Junction-to-Ambient thJA C/W Maximum Junction-to-Case (Drain) Steady State R 2.1 2.6 thJC Notes: a. Package limited. b. Surface mounted on 1 x 1 FR4 board. c. t = 10 s. d. See solder profile (www.vishay.com/ppg 73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 70 C/W. Document Number: 70630 www.vishay.com S10-1534-Rev. A, 19-Jul-10 1New Product Si7774DP Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min. Typ.Max.Unit Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 30 DS GS D V Gate-Source Threshold Voltage V V = V , I = 250 A 1.0 2.2 GS(th) DS GS D Gate-Source Leakage I V = 0 V, V = 20 V 100 nA GSS DS GS V = 30 V, V = 0 V 0.040 0.3 DS GS Zero Gate Voltage Drain Current I mA DSS V = 30 V, V = 0 V, T = 100 C 3.5 50 DS GS J a I V 5 V, V = 10 V 30 A On-State Drain Current D(on) DS GS V = 10 V, I = 15 A 0.0031 0.0038 GS D a Drain-Source On-State Resistance R DS(on) V = 4.5 V, I = 10 A 0.0038 0.0047 GS D a Forward Transconductance g V = 15 V, I = 15 A 70 S fs DS D b Dynamic Input Capacitance C 2630 iss Output Capacitance C V = 15 V, V = 0 V, f = 1 MHz 630 pF oss DS GS Reverse Transfer Capacitance C 210 rss V = 15 V, V = 10 V, I = 10 A 44 66 DS GS D Total Gate Charge Q g 21.5 32.5 nC Gate-Source Charge Q V = 15 V, V = 4.5 V, I = 10 A 5.8 gs DS GS D Gate-Drain Charge Q 6.1 gd Gate Resistance R f = 1 MHz 0.4 2.1 4.2 g Turn-On Delay Time t 11 22 d(on) Rise Time t 918 r V = 15 V, R = 1.5 DD L I 10 A, V = 10 V, R = 1 Turn-Off Delay Time t 30D GEN g 60 d(off) Fall Time t 918 f ns Turn-On Delay Time t 21 42 d(on) Rise Time t 11 22 r V = 15 V, R = 1.5 DD L I 10 A, V = 4.5 V, R = 1 Turn-Off Delay Time t 29D GEN g 59 d(off) Fall Time t 816 f Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current I T = 25 C 60 S C A a Pulse Diode Forward Current I 80 SM Body Diode Voltage V I = 5 A 0.45 0.6 V SD S Body Diode Reverse Recovery Time t 22 44 ns rr Body Diode Reverse Recovery Charge Q 11 22 nC rr I = 10 A, dI/dt = 100 A/s, T = 25 C F J Reverse Recovery Fall Time t 10 a ns Reverse Recovery Rise Time t 12 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 70630 2 S10-1534-Rev. A, 19-Jul-10