Si7904BDN Vishay Siliconix Dual N-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 a V (V) R () Q (Typ.) I (A) DS DS(on) g D Available 0.030 at V = 4.5 V 6 GS TrenchFET Power MOSFET 0.036 at V = 2.5 V 20 6 GS 9 nC APPLICATIONS 0.045 at V = 1.8 V 6 GS HDD Spindle Drive PowerPAK 1212-8 S1 3.30 mm 3.30 mm 1 D D 1 2 G1 2 S2 3 G2 4 D1 8 D1 G G 1 2 7 D2 6 D2 5 Bottom View S S 1 2 Ordering Information: Si7904BDN-T1-E3 (Lead (Pb)-free) Si7904BDN-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol Limit Unit Drain-Source Voltage V 20 DS V Gate-Source Voltage V 8 GS a T = 25 C 6 C a T = 85 C 6 C Continuous Drain Current (T = 150 C) I J D a T = 25 C 6 A b, c T = 85 C 5.1 A A Pulsed Drain Current I 20 DM a T = 25 C 6 C Continuous Source-Drain Diode Current I S b, c T = 25 C 2.1 A T = 25 C 17.8 C T = 85 C 9.3 C Maximum Power Dissipation P W D b, c T = 25 C 2.5 A b, c T = 85 C 1.3 A Operating Junction and Storage Temperature Range T , T - 55 to 150 J stg C d, e Soldering Recommendations (Peak Temperature) 260 THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b, f t 10 s R 40 50 Maximum Junction-to-Ambient thJA C/W Maximum Junction-to-Case (Drain) Steady State R 5.6 7 thJC Notes: a. Package limited. b. Surface Mounted on 1 x 1 FR4 board. c. t = 10 s. d. See Solder Profile (www.vishay.com/ppg 73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 94 C/W. Document Number: 74409 www.vishay.com S-83050-Rev. B, 29-Dec-08 1Si7904BDN Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V V = 0 V, I = 250 A Drain-Source Breakdown Voltage 20 V DS GS D V /T V Temperature Coefficient 22.5 DS J DS I = 250 A mV/C D V /T V Temperature Coefficient - 2.9 GS(th) J GS(th) V V = V , I = 250 A Gate-Source Threshold Voltage 0.45 1.0 V GS(th) DS GS D I V = 0 V, V = 8 V Gate-Source Leakage 100 ns GSS DS GS V = 20 V, V = 0 V 1 DS GS I DSS Zero Gate Voltage Drain Current A V = 20 V, V = 0 V, T = 55 C 10 DS GS J a On-State Drain Current I V 5 V, V = 4.5 V 20 D(on) DS GS V = 4.5 V, I = 7.1 A 0.025 0.030 GS D R V = 2.5 V, I = 6.5 A 0.030 0.036 DS(on) GS D a Drain-Source On-State Resistance V = 1.8 V, I = 2.2 A 0.036 0.045 GS D a Forward Transconductance g V = 10 V, I = 7.1 A 26 S fs DS D b Dynamic c Input Capacitance 860 iss Output Capacitance c V = 10 V, V = 0 V, f = 1 MHz 110 pF oss DS GS c Reverse Transfer Capacitance 65 rss V = 10 V, V = 8 V, I = 6 A 16 24 DS GS D Total Gate Charge Q g 9 13.5 nC Q Gate-Source Charge 1.4 gs V = 10 V, V = 4.5 V, I = 6 A DS GS D Gate-Drain Charge Q 1.4 gd R Gate Resistance f = 1 MHz 3.2 g t Turn-on Delay Time 715 d(on) t Rise Time 60 90 r V = 10 V, R = 1 DD L t Turn-Off Delay Time 25 40 d(off) I 5.1 A, V = 4.5 V, R = 1 D GEN g t Fall Time 610 f ns t Turn-on Delay Time 510 d(on) t Rise Time 15 25 r V = 10 V, R = 1 DD L t Turn-Off Delay Time 25 40 d(off) I 5.1 A, V = 8 V, R = 1 D GEN g Fall Time t 510 f Drain-Source Body Diode Characteristics I T = 25 C Continuous Source-Drain Diode Current 6 S C A Pulse Diode Forward Current I 20 SM V I = 5.1 A, V = 0 V Body Diode Voltage 0.8 1.2 V SD S GS Body Diode Reverse Recovery Time t 20 40 ns rr Q Body Diode Reverse Recovery Charge 920 nC rr I = 5.1 A, dI/dt = 100 A/s, T = 25 C F J Reverse Recovery Fall Time t 12 a ns t Reverse Recovery Rise Time 8 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 % b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 74409 2 S-83050-Rev. B, 29-Dec-08