X-On Electronics has gained recognition as a prominent supplier of SI9945BDY-T1-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI9945BDY-T1-GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SI9945BDY-T1-GE3 Vishay

SI9945BDY-T1-GE3 electronic component of Vishay
SI9945BDY-T1-GE3 Vishay
SI9945BDY-T1-GE3 MOSFETs
SI9945BDY-T1-GE3  Semiconductors

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See Product Specifications
Part No. SI9945BDY-T1-GE3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET 60V 5.3A 3.1W 58mohm @ 10V
Datasheet: SI9945BDY-T1-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.0864 ea
Line Total: USD 1.09 
Availability - 183
Ship by Fri. 16 May to Wed. 21 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
183
Ship by Fri. 16 May to Wed. 21 May
MOQ : 1
Multiples : 1
1 : USD 1.0864
10 : USD 0.8746
30 : USD 0.5765
100 : USD 0.4474
500 : USD 0.4053
1000 : USD 0.3833

6369
Ship by Wed. 07 May to Fri. 09 May
MOQ : 1
Multiples : 1
1 : USD 0.882
10 : USD 0.833
26 : USD 0.7252
71 : USD 0.686
500 : USD 0.6608

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
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Packaging
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Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
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Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
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Rise Time
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Typical Turn-Off Delay Time
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Transistor Type
Forward Transconductance - Min
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We are delighted to provide the SI9945BDY-T1-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI9945BDY-T1-GE3 and other electronic components in the MOSFETs category and beyond.

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The SI9945BDY-T1-GE3 is a Silicon N-Channel Metal Oxide Semiconductor (MOSFET) from Vishay Semiconductor. It has an extremely low on-state resistance of 8.5 mO and provides high switching speeds as well as low gate drive power. It is designed for use in high-speed applications such as high frequency DC/DC converters. The SI9945BDY-T1-GE3 is housed in an ultra-small VMC24 package, which makes it ideal for space-sensitive designs. In addition, it has an avalanche capability of 350A and a maximum drain source voltage of 25V.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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