SI9407BDY-T1-GE3 Vishay

SI9407BDY-T1-GE3 electronic component of Vishay
SI9407BDY-T1-GE3 Vishay
SI9407BDY-T1-GE3 MOSFETs
SI9407BDY-T1-GE3  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of SI9407BDY-T1-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI9407BDY-T1-GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No.SI9407BDY-T1-GE3
Manufacturer:Vishay
Category:MOSFETs
Description:MOSFET -60V Vds 20V Vgs SO-8
Datasheet:SI9407BDY-T1-GE3 Datasheet (PDF)
Shipping Charges:Click here for details
AI Image
Price (USD)
  
1: USD 0.9304 ea
Line Total: USD 0.93 
Availability : 22584
  
Ship by Tue. 23 Jun to Mon. 29 Jun
QtyUnit Price
1$ 0.9304
10$ 0.7326
30$ 0.6492
100$ 0.3672
500$ 0.336
1000$ 0.3172
  

Availability22584
Ship by Tue. 23 Jun to Mon. 29 Jun
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.9304
10$ 0.7326
30$ 0.6492
100$ 0.3672
500$ 0.336
1000$ 0.3172


Availability1792
Ship by Fri. 19 Jun to Tue. 23 Jun
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 2.226
5$ 1.7472
10$ 1.5232
34$ 0.5726
92$ 0.5418


Availability2741
Ship by Tue. 23 Jun to Mon. 29 Jun
MOQ : 200
Multiples : 1
QtyUnit Price
200$ 1.3031
232$ 1.1229
500$ 0.8408
1000$ 0.7332
2500$ 0.6615
5000$ 0.6527


Availability1792
Ship by Tue. 23 Jun to Mon. 29 Jun
MOQ : 209
Multiples : 1
QtyUnit Price
209$ 1.2485
238$ 1.0938
500$ 0.8408
1000$ 0.7367
2500$ 0.6632
5000$ 0.6475

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Series
Transistor Type
Brand
Forward Transconductance - Min
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Brand Category
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the SI9407BDY-T1-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI9407BDY-T1-GE3 and other electronic components in the MOSFETs category and beyond.

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The SI9407BDY-T1-GE3 MOSFET is a high-speed SmartFET device from Vishay that features low on-resistance and high maximum current. The device has a break down voltage of up to -60V and gate threshold voltage of 20V. It is housed in an 8-pin SO-8 package. It is designed for high-visibility intelligent power applications such as motor control, telecomms, DC-DC converters, and automotive systems. The device boasts low input capacitance and low gate charge to reduce ringing and maintain stability. The device can be used in a cascode configuration with two devices back to back to reduce losses and improve signal transmission performance.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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