New Product SiE878DF Vishay Siliconix N-Channel 25-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 a V (V) R () Q (Typ.) I (A) DS DS(on) g D Definition 0.0052 at V = 10 V 45 TrenchFET Gen III Power MOSFET GS 25 11.2 nC Ultra Low Thermal Resistance Using Top- 0.0068 at V = 4.5 V 45 GS Exposed PolarPAK Package for Double- Sided Cooling Leadframe-Based New Encapsulated Package - Die Not Exposed Package Drawing www.vishay.com/doc 68797 - Same Layout Regardless of Die Size Low Q /Q Ratio Helps Prevent Shoot-Through gd gs 100 % R and UIS Tested PolarPAK g 10 9 8 7 6 Compliant to RoHS directive 2002/95/EC D G S S D 67 8 9 10 APPLICATIONS D VRM, POL DC/DC Conversion D DS G D Server High-Side Switch G D G S S D 5 432 1 S 1 2 3 4 5 Top View Bottom View N-Channel MOSFET Top surface is connected to pins 1, 5, 6, and 10 For Related Documents www.vishay.com/ppg 65456 Ordering Information: SiE878DF-T1-GE3 (Lead (Pb)-free) and Halogen-free ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol Limit Unit V Drain-Source Voltage 25 DS V Gate-Source Voltage V 20 GS a T = 25 C 45 C T = 70 C 42.5 C Continuous Drain Current (T = 150 C) I J D b, c T = 25 C 24 A b, c T = 70 C 19 A A Pulsed Drain Current I 100 DM T = 25 C 20.8 C Continuous Source-Drain Diode Current I S b, c T = 25 C 4.3 A Single Pulse Avalanche Current I 25 AS L = 0.1 mH E Avalanche Energy 31 mJ AS T = 25 C 25 C T = 70 C 16 C P Maximum Power Dissipation W D b, c T = 25 C 5.2 A b, c T = 70 C 3.3 A Operating Junction and Storage Temperature Range T , T - 55 to 150 J stg C d, e 260 Soldering Recommendations (Peak Temperature) Notes: a. T = 25 C. Package limited. C b. Surface Mounted on 1 x 1 FR4 board. c. t = 10 s. d. See Solder Profile (www.vishay.com/ppg 73257). The PolarPAK is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. Document Number: 65456 www.vishay.com S09-2034-Rev. A, 05-Oct-09 1New Product SiE878DF Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit a, b t 10 s R 20 24 Maximum Junction-to-Ambient thJA Maximum Junction-to-Case (Drain Top) R (Drain) 45 C/W thJC Steady State a, c R (Source) 5.5 7 Maximum Junction-to-Case (Source) thJC Notes: a. Surface Mounted on 1 x 1 FR4 board. b. Maximum under Steady State conditions is 68 C/W. c. Measured at source pin (on the side of the package). SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V = 0 V, I = 250 A Drain-Source Breakdown Voltage V 25 V GS D DS V Temperature Coefficient V /T 25 DS DS J I = 250 A mV/C D V Temperature Coefficient V /T - 5 GS(th) GS(th) J V V = V , I = 250 A Gate-Source Threshold Voltage 12.2V GS(th) DS GS D I V = 0 V, V = 20 V Gate-Source Leakage 100 nA GSS DS GS V = 25 V, V = 0 V 1 DS GS I Zero Gate Voltage Drain Current A DSS V = 25 V, V = 0 V, T = 55 C 10 DS GS J a I V 5 V, V = 10 V 25 A D(on) DS GS On-State Drain Current V = 10 V, I = 20 A 0.0042 0.0052 GS D a R Drain-Source On-State Resistance DS(on) V = 4.5 V, I = 20 A 0.0055 0.0068 GS D a g V = 15 V, I = 20 A 74 S fs DS D Forward Transconductance b Dynamic C Input Capacitance 1400 iss C V = 12.5 V, V = 0 V, f = 1 MHz Output Capacitance 400 pF oss DS GS C Reverse Transfer Capacitance 145 rss V = 12.5 V, V = 10 V, I = 20 A 24 36 DS GS D Total Gate Charge Q g 11.2 17 nC Q V = 12.5 V, V = 4.5 V, I = 20 A Gate-Source Charge 4.2 gs DS GS D Q Gate-Drain Charge 3 gd R Gate Resistance f = 1 MHz 0.2 1.2 2.4 g t Turn-On Delay Time 15 25 d(on) t V = 12.5 V, R = 1.25 Rise Time 15 25 r DD L t I 10 A, V = 4.5 V, R = 1 22 35 Turn-Off Delay Time d(off) D GEN g t Fall Time 12 20 f t Turn-On Delay Time 10 15 d(on) ns V = 12.5 V, R = 1.25 t Rise Time DD L 10 15 r t I 10 A, V = 10 V, R = 1 Turn-Off Delay Time 20 30 d(off) D GEN g t Fall Time 10 15 f Drain-Source Body Diode Characteristics I T = 25 C Continuous Source-Drain Diode Current 20.8 S C A a I 60 Pulse Diode Forward Current SM V I = 10 A Body Diode Voltage 0.8 1.2 V SD S t Body Diode Reverse Recovery Time 30 45 ns rr Q Body Diode Reverse Recovery Charge 24 36 nC rr I = 10 A, dI/dt = 100 A/s, T = 25 C F J t Reverse Recovery Fall Time 14 a ns t Reverse Recovery Rise Time 16 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 % b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 65456 2 S09-2034-Rev. A, 05-Oct-09