SiHB35N60EF www.vishay.com Vishay Siliconix EF Series Power MOSFET With Fast Body Diode FEATURES D 2 A specific on resistance (m-cm ) reduction of 2 D PAK (TO-263) 25 % Low figure-of-merit (FOM) R x Q on g Low input capacitance (C ) iss G Reduced switching and conduction losses Ultra low gate charge (Q ) g D G S Avalanche energy rated (UIS) S N-Channel MOSFET Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 APPLICATIONS PRODUCT SUMMARY Server and telecom power supplies V (V) at T max. 650 DS J Switch mode power supplies (SMPS) R typ. () at 25 C V = 10 V 0.084 DS(on) GS Power factor correction power supplies (PFC) Q max. (nC) 134 g Lighting Q (nC) 16 gs - High-intensity discharge (HID) Q (nC) 48 gd - Fluorescent ballast lighting Configuration Single Industrial - Welding - Induction heating - Motor drives - Battery chargers - Renewable energy - Solar (PV inverters) ORDERING INFORMATION 2 Package D PAK (TO-263) Lead (Pb)-free and halogen-free SiHB35N60EF-GE3 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-source voltage V 600 DS V Gate-source voltage V 30 GS T = 25 C 32 C Continuous drain current (T = 150 C) V at 10 V I J GS D T = 100 C 20 A C a Pulsed drain current I 80 DM Linear derating factor 2.0 W/C b Single pulse avalanche energy E 298 mJ AS Maximum power dissipation P 250 W D Operating junction and storage temperature range T , T -55 to +150 C J stg Drain-source voltage slope T = 125 C 100 J dv/dt V/ns d Reverse diode dv/dt 50 c Soldering recommendations (peak temperature) For 10 s 260 C Notes a. Repetitive rating pulse width limited by maximum junction temperature b. V = 140 V, starting T = 25 C, L = 28.2 mH, R = 25 , I = 4.6 A DD J g AS c. 1.6 mm from case d. I = 17 A, di/dt = 300 A/s, starting T = 25 C SD J S20-0091-Rev. B, 17-Feb-2020 Document Number: 92108 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000SiHB35N60EF www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum junction-to-ambient R -62 thJA C/W Maximum junction-to-case (drain) R -0.5 thJC SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-source breakdown voltage V V = 0 V, I = 250 A 600 - - V DS GS D V temperature coefficient V /T Reference to 25 C, I = 10 mA - 0.66 - V/C DS DS J D Gate-source threshold voltage (N) V V = V , I = 250 A 2.0 - 4.0 V GS(th) DS GS D V = 20 V - - 100 nA GS Gate-source leakage I GSS V = 30 V - - 1 A GS V = 480 V, V = 0 V - - 1 DS GS Zero gate voltage drain current I A DSS V = 480 V, V = 0 V, T = 125 C - - 500 DS GS J Drain-source on-state resistance R V = 10 V I = 17 A - 0.084 0.097 DS(on) GS D a Forward transconductance g V = 30 V, I = 17 A - 8 - S fs DS D Dynamic Input capacitance C - 2568 - iss V = 0 V, GS Output capacitance C V = 100 V, - 113 - oss DS f = 1 MHz Reverse transfer capacitance C -7 - rss pF Effective output capacitance, energy C -81 - o(er) a related V = 0 V to 480 V, V = 0 V DS GS Effective output capacitance, time C - 421 - o(tr) b related Total gate charge Q -89 134 g Gate-source charge Q V = 10 V I = 17 A, V = 480 V -16 - nC gs GS D DS Gate-drain charge Q -48 - gd Turn-on delay time t -28 56 d(on) Rise time t -85 170 r V = 480 V, I = 17 A, DD D ns V = 10 V, R = 9.1 Turn-off delay time t GS g -96 192 d(off) Fall time t -61 122 f Gate input resistance R f = 1 MHz, open drain 0.2 0.5 1.0 g Drain-Source Body Diode Characteristics MOSFET symbol D Continuous source-drain diode current I -- 32 S showing the A integral reverse G p - n junction diode Pulsed diode forward current I -- 80 S SM Diode forward voltage V T = 25 C, I = 17 A, V = 0 V - - 1.2 V SD J S GS Reverse recovery time t - 150 300 ns rr T = 25 C, I = I = 17 A, J F S Reverse recovery charge Q -1.1 2.2 C rr di/dt = 100 A/s, V = 400 V R Reverse recovery current I -14 - A RRM Notes a. C is a fixed capacitance that gives the same energy as C while V is rising from 0 % to 80 % V oss(er) oss DS DSS b. C is a fixed capacitance that gives the same charging time as C while V is rising from 0 % to 80 % V oss(tr) oss DS DSS S20-0091-Rev. B, 17-Feb-2020 Document Number: 92108 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000