V 1700 V DS I 25C 40 A D C2M0080170P R 80 m DS(on) Silicon Carbide Power MOSFET TM C2M MOSFET Technology N-Channel Enhancement Mode Features Package TAB Optimized package with separate driver source pin Drain 8mm of creepage distance between drain and source High blocking voltage with low On-resistance High speed switching with low capacitances Easy to parallel and simple to drive Halogen Free, RoHS compliant Benefits Drain (Pin 1, TAB) Reduce switching losses and minimize gate ringing 1 2 3 4 Higher system efficiency D S S G Reduced cooling requirements Increased power density Increased system switching frequency Gate (Pin 4) Driver Power Applications Source Source (Pin 3) (Pin 2) 1500V Solar Inverters Switch Mode Power Supplies High voltage DC/DC Converters Marking Part Number Package Capacitor discharge C2M0080170P TO-247-4 Plus C2M0080170P Maximum Ratings (T = 25 C unless other wise specified) C Symbol Parameter Value Unit Test Conditions Note 1700 Drain - Source Voltage V VGS = 0 V, ID = 100 A V DSmax AC (f >1 Hz) Note: 1 Gate - Source Voltage -10/+25 V V GSmax Static Note: 2 Gate - Source Voltage -5/+20 V V GSop 40 Fig. 19 V = 20 V, T = 25C GS C I Continuous Drain Current A D 27 V = 20 V, T = 100C GS C 80 I Pulsed Drain Current A Fig. 22 Pulse width t limited by T D(pulse) jmax P 277 T =25C, T = 150 C Power Dissipation W Fig. 20 P C J D -55 to Operating Junction and Storage Temperature C T , T J stg +150 Solder Temperature 260 C 1.6mm (0.063) from case for 10s T L Note (1): When using MOSFE T Body Diode V = -5V/+25V GSmax Note (2): MOSFE T can also safely operate at 0/+20V C2M0080170P Rev. A, 05-2018 1Electrical Characteristics (T = 25C unless other wise specified) C Symbol Parameter Min. Typ. Max. Unit Test Conditions Note 1700 V Drain-Source Breakdown Voltage V V = 0 V, I = 100 A (BR)DSS GS D 2.0 2.6 4 V V = V , I = 10 mA DS GS D V GS(th) Gate Threshold Voltage Fig. 11 2.0 V VDS = VGS, ID = 10 mA, TJ = 150C V = 1700 V, V = 0 V I Zero Gate Voltage Drain Current 1 100 A DS GS DSS IGSS Gate-Source Leakage Current 250 nA VGS = 20 V, VDS = 0 V 125 V = 20 V, I = 28 A 80 GS D Fig. 4, R Drain-Source On-State Resistance m DS(on) 5, 6 150 V = 20 V, I = 28 A, T = 150C GS D J 9.73 V = 20 V, I = 20 A DS DS g Transconductance S Fig. 7 fs 10.07 V = 20 V, I = 20 A, T = 150C DS DS J 2250 C Input Capacitance iss V = 0 V GS Fig. 17, 105 C Output Capacitance oss pF V = 1000 V 18 DS 4 C Reverse Transfer Capacitance rss f = 1 MHz VAC = 25 mV 65 Eoss Coss Stored Energy J Fig. 16 VDS = 1200 V, VGS = -5/20 V, I = 20A, EON Turn-On Switching Energy (SiC Diode FWD) 0.3 D Fig. 26, mJ R = 2.5, L= 200 H, TJ = 150C, G(ext) 29b E Turn Off Switching Energy (SiC Diode FWD) 0.1 OFF Using SiC Diode as FWD VDS = 1200 V, VGS = -5/20 V, I = 20A, E Turn-On Switching Energy (Body Diode FWD) 1.1 D ON Fig. 26, mJ R = 2.5, L= 200 H, TJ = 150C, G(ext) 29a EOFF Turn Off Switching Energy (Body Diode FWD) 0.1 Using MOSFET as FWD 25 t Turn-On Delay Time d(on) V = 1200 V, V = -5/20 V DD GS 9 t Rise Time r I = 20 A, R = 2.5 , D G(ext) ns Fig. 27 Timing relative to V DS 34 t Turn-Off Delay Time d(off ) Inductive load 18 t Fall Time f 2 , R Internal Gate Resistance f = 1 MHz V = 25 mV G(int) AC 28 Q Gate to Source Charge gs VDS = 1200 V, VGS = -5/20 V I = 20 A 33 D Qgd Gate to Drain Charge nC Fig. 12 Per IEC60747-8-4 pg 21 120 Q Total Gate Charge g Reverse Diode Characteristics Symbol Parameter Typ. Max. Unit Test Conditions Note 4.1 V V = - 5 V, I = 10 A GS SD Fig. 8, V Diode Forward Voltage SD 9, 10 3.6 V = - 5 V, I = 10 A, T = 150 C V GS SD J 28 T = 25C, V = - 5 V C IS Continuous Diode Forward Current A Note 1 GS 36 t Reverse Recover time ns rr V = - 5 V, I = 20 A, V = 1200 V GS SD R 1 C Note 1 Q Reverse Recovery Charge rr dif/dt = 2600 A/s, T = 150 C J 38 I Peak Reverse Recovery Current A rrm Thermal Characteristics Typ. Symbol Parameter Max. Unit Test Conditions Note 0.37 0.45 RJC Thermal Resistance from Junction to Case C/W Fig. 21 R Thermal Resistance From Junction to Ambient 40 JA C2M0080170P Rev. A, 05-2018 2