SIHD2N80AE-GE3 Vishay

Name: SIHD2N80AE-GE3
Brand: Vishay
SKU: SIHD2N80AEGE3_Vishay
Availability: InStock
Rating: 5 (11 reviews)

SIHD2N80AE-GE3 electronic component of Vishay

Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of SIHD2N80AE-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SIHD2N80AE-GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No.	SIHD2N80AE-GE3
Manufacturer:	Vishay
Category:	MOSFETs
Description:	MOSFET Nch 800V Vds 30V Vgs TO-252 DPAK
Datasheet:	SIHD2N80AE-GE3 Datasheet (PDF)

Price (USD)

1: USD 1.806 ea
Line Total: USD 1.81

Availability : 9

Ship by Thu. 07 Aug to Mon. 11 Aug

Qty Unit Price
1 $ 1.806
5 $ 1.624
13 $ 1.54
25 $ 1.428
75 $ 1.4

SIHD2N80AE-GE3 More Buying Options & Price Grid(s)

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Availability

Price (USD)

Buy Price

Quantity

Availability 9

Ship by Thu. 07 Aug to Mon. 11 Aug

MOQ : 1
Multiples : 1

Qty Unit Price
1 $ 1.806
5 $ 1.624
13 $ 1.54
25 $ 1.428
75 $ 1.4

Specifications

Manufacturer

Vishay Vishay

Product Category

MOSFETs MOSFETs

RoHS - XON

Y Y

Id - Continuous Drain Current

2.9 A 2.9 A

Vds - Drain-Source Breakdown Voltage

800 V 800 V

Rds On - Drain-Source Resistance

2.5 Ohms 2.5 Ohms

Transistor Polarity

N - Channel N - Channel

Vgs th - Gate-Source Threshold Voltage

4 V 4 V

Minimum Operating Temperature

- 55 C - 55 C

Maximum Operating Temperature

+ 150 C + 150 C

Mounting Style

Smd/Smt Smd/Smt

Package / Case

TO - 252 TO - 252

Packaging

Tube Tube

Technology

Si Si

Number of Channels

1 Channel 1 Channel

Vgs - Gate-Source Voltage

30 V 30 V

Qg - Gate Charge

7 nC 7 nC

Channel Mode

Enhancement Enhancement

Configuration

Single Single

Series

E E

Brand

Vishay / Siliconix Vishay / Siliconix

Fall Time

23 ns 23 ns

Product Type

Mosfet Mosfet

Rise Time

8 ns 8 ns

Factory Pack Quantity :

50 50

Subcategory

Mosfets Mosfets

Typical Turn-Off Delay Time

10 ns 10 ns

Typical Turn-On Delay Time

13 ns 13 ns

Notes:- Show Stocked Products With Similar Attributes.

SIHD2N80AE-GE3 Alternative Parts

We are delighted to provide the SIHD2N80AE-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SIHD2N80AE-GE3 and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

The Vishay SIHD2N80AE-GE3 is a n-channel power MOSFET with a voltage rating of 800 V, a drain-source voltage rating of 30 V, and a gate-source voltage rating of TO-252. It is constructed with high-frequency trench silicon technology, which helps to minimize losses in order to maximize efficiency. The device is housed in a DPAK package, which is an industry-standard surface mount plastic TO-220 package. This MOSFET is suitable for high-frequency switching applications, making it ideal for use in inverters, inductive load switching, and load commutation purposes.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

BC may also be referenced as

BC COMPONENTS
BC COMPONENTS (VISHAY)
BCC
BEYSCHLAG
DALE
DALE (VISHAY)
DLE
DRALORIC / VISHAY
General Semi
GENERAL SEMI.
GENERAL SEMICONDUCTOR (VISHAY)
GS
HUNTINGTON ELECTRIC
Micro-Measurements (Division of Vishay Precision Group)
ROEDERSTEIN
ROEDERSTEIN / VISHAY
SFERNICE (VISHAY)
SFR
SILICONIX
SILICONIX (VISHAY)
SIX
SPD
SPECTROL
SPECTROL ELECTRONICS
SPP
SPRAGUE (VISHAY)
TECHNO
VIR
Vishay BC Components
Vishay Beyschlag
Vishay Cera-Mite
Vishay Dale
Vishay Draloric
Vishay Electro-Films
Vishay Huntington
Vishay Mills
Vishay Milwaukee
Vishay Polytech
Vishay Roederstein
Vishay Sfernice
Vishay Siliconix
Vishay Spectrol
Vishay Sprague
Vishay Tansitor
Vishay Techno
Vishay Thin Film
Vishay Vitramon
Vishay / BC Components
Vishay / Beyschlag
Vishay / Cera-Mite
Vishay / Dale
Vishay / Draloric
Vishay / Electro-Films
Vishay / Huntington
VISHAY / LITE-ON
Vishay / MCB Industrie
Vishay / Mills
Vishay / Milwaukee
Vishay / Polytech
Vishay / Roederstein
Vishay / Sfernice
Vishay / Siliconix
Vishay / Spectrol
Vishay / Sprague
Vishay / Tansitor
Vishay / Techno
Vishay / Thin Film
Vishay / Vitramon
Vishay BC Components
Vishay Beyschlag
Vishay Beyschlag/Draloric/BC Components
VISHAY CERA-MITE
Vishay Dale
VISHAY DRALORIC
VISHAY ELECTRO-FILMS
VISHAY FOIL RESISTORS
Vishay Foil Resistors (Division of Vishay Precision Group)
VISHAY FOIL RESISTORS / VPG
Vishay General Semiconductor
Vishay Huntington Electric Inc.
Vishay Intertech
Vishay Micro-Measurements
VISHAY OPTO
Vishay Precision
Vishay Precision Group
Vishay Precision Group Foil Resistors
VISHAY ROEDERSTEIN
VISHAY SEMICONDUCTOR
Vishay Semiconductor Diodes Division
Vishay Semiconductor Opto Division
Vishay Semiconductors
Vishay Sfernice
Vishay Siliconix
VISHAY SMALL SIGNAL
VISHAY SPECIALTY CAPACITORS
Vishay Spectrol
Vishay Sprague
VISHAY TANSITOR
VISHAY TECHNO
Vishay Thin Film
Vishay Vitramon
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Vishay/Beyschlag
Vishay/Dale
Vishay/General Semic
VISHAY/SILICONIX
VishayBC Components
VishayBeyschlag
VishayElectro-Films
VishayGeneral Semiconductor
VishaySemiconductors
VishaySprague
VishayVitramon
VIT
VITRAMON (VISHAY)
VITRAMON/VISHAY
VITROMON
VSC
VSO
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