SiHG039N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES D th 4 generation E series technology TO-247AC Low figure-of-merit (FOM) R x Q on g Low effective capacitance (C ) o(er) G Reduced switching and conduction losses Avalanche energy rated (UIS) S Material categorization: for definitions of compliance D S please see www.vishay.com/doc 99912 G N-Channel MOSFET APPLICATIONS Server and telecom power supplies PRODUCT SUMMARY Switch mode power supplies (SMPS) V (V) at T max. 650 DS J Power factor correction power supplies (PFC) R typ. () at 25 C V = 10 V 0.034 DS(on) GS Lighting Q max. (nC) 126 g - High-intensity discharge (HID) Q (nC) 29 gs Q (nC) 28 - Fluorescent ballast lighting gd Configuration Single Industrial - Welding - Motor drives - Battery chargers - Solar (PV inverters) ORDERING INFORMATION Package TO-247AC Lead (Pb)-free and halogen-free SiHG039N60E-GE3 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-source voltage V 600 DS V Gate-source voltage V 30 GS T = 25 C 63 C Continuous drain current (T = 150 C) V at 10 V I J GS D T = 100 C 40 A C a Pulsed drain current I 199 DM Linear derating factor 2.9 W/C b Single pulse avalanche energy E 633 mJ AS Maximum power dissipation P 357 W D Operating junction and storage temperature range T , T -55 to +150 C J stg Drain-source voltage slope T = 125 C 70 J dv/dt V/ns d Reverse diode dv/dt 6.3 c Soldering recommendations (peak temperature) For 10 s 260 C Notes a. Repetitive rating pulse width limited by maximum junction temperature b. V = 120 V, starting T = 25 C, L = 28.2 mH, R = 25 , I = 6.7 A DD J g AS c. 1.6 mm from case d. I I , di/dt = 100 A/s, starting T = 25 C SD D J S18-0972-Rev. A, 01-Oct-2018 Document Number: 92136 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000SiHG039N60E www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum junction-to-ambient R -40 thJA C/W Maximum junction-to-case (drain) R -0.35 thJC SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-source breakdown voltage V V = 0 V, I = 250 A 600 - - V DS GS D V temperature coefficient V /T Reference to 25 C, I = 1 mA - 0.65 - V/C DS DS J D Gate-source threshold voltage (N) V V = V , I = 250 A 3 - 5 V GS(th) DS GS D V = 20 V - - 100 nA GS Gate-source leakage I GSS V = 30 V - - 1 A GS V = 600 V, V = 0 V - - 1 DS GS Zero gate voltage drain current I A DSS V = 480 V, V = 0 V, T = 125 C - - 10 DS GS J Drain-source on-state resistance R V = 10 V I = 32 A - 0.034 0.039 DS(on) GS D Forward transconductance g V = 20 V, I = 32 A - 17 - S fs DS D Dynamic Input capacitance C - 4369 - iss V = 0 V, GS Output capacitance C -V = 100 V, 178- oss DS f = 1 MHz Reverse transfer capacitance C -7- rss pF Effective output capacitance, energy C - 143 - o(er) a related V = 0 V to 480 V, V = 0 V DS GS Effective output capacitance, time C - 870 - o(tr) b related Total gate charge Q -84 126 g Gate-source charge Q -2V = 10 V I = 32 A, V = 480 V9- nC gs GS D DS Gate-drain charge Q -28- gd Turn-on delay time t -79 119 d(on) Rise time t - 126 190 r V = 480 V, I = 32 A, DD D ns V = 10 V, R = 24 Turn-off delay time t -GS g 176264 d(off) Fall time t -94141 f Gate input resistance R f = 1 MHz, open drain 0.3 0.7 1.4 g Drain-Source Body Diode Characteristics MOSFET symbol D Continuous source-drain diode current I -- 50 S showing the A G integral reverse Pulsed diode forward current I -- 155 SM p - n junction diode S Diode forward voltage V T = 25 C, I = 32 A, V = 0 V - - 1.2 V SD J S GS Reverse recovery time t - 663 1326 ns rr T = 25 C, I = I = 32 A, J F S Reverse recovery charge Q - 12.1 24.2 C rr di/dt = 100 A/s, V = 25 V R Reverse recovery current I -30 - A RRM Notes a. C is a fixed capacitance that gives the same energy as C while V is rising from 0 % to 80 % V oss(er) oss DS DSS b. C is a fixed capacitance that gives the same charging time as C while V is rising from 0 % to 80 % V oss(tr) oss DS DSS S18-0972-Rev. A, 01-Oct-2018 Document Number: 92136 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000