DATA SHEET www.onsemi.com MOSFET - Power, BV R MAX I MAX DSS DS(on) D 650 V 72 m V 44 A N-Channel, SUPERFET III, Automotive, Easy-drive D 650 V, 72 m , 44 A NVHL072N65S3 G Description SuperFET III MOSFET is onsemis brandnew high voltage S superjunction (SJ) MOSFET family that is utilizing charge balance N-Channel MOSFET technology for outstanding low onresistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss provide superior switching performance, and with stand extreme dv/dt rate. Consequently, SuperFET III MOSFET Easydrive series helps manage EMI issues and allows for easier design implementation. Features TO2473LD AECQ101 Qualified CASE 340CX Max Junction Temperature 150C Typ. R (on) = 61 m DS Ultra Low Gate Charge (Typ. Q = 82 nC) G MARKING DIAGRAM Low Effective Output Capacitance (Typ. C (eff.) = 724 pF) OSS 100% Avalanche Tested Y&Z&3&K These Devices are PbFree and are RoHS Compliant NVHL 072N65S3 Typical Applications Automotive PHEVBEV DCDC Converter Automotive Onboard Charger for PHEVBEV Y = onsemi Logo &Z = Assembly Plant Code &3 = Numeric Date Code &K = Lot Code NVHL072N65S3 = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2018 1 Publication Order Number: September, 2021 Rev. 2 NVHL072N65S3/DNVHL072N65S3 ABSOLUTE MAXIMUM RATINGS (T = 25C, Unless otherwise specified) C Symbol Parameter Value Unit V Drain to Source Voltage 650 V DSS V Gate to Source Voltage DC 30 V GSS AC (f > 1 Hz) 30 V I Drain Current Continuous (T = 25C) 44 A D C Continuous (T = 100C) 28 A C I Pulsed Drain Current Pulsed (Note 1) 110 A DM E Single Pulsed Avalanche Energy (Note 2) 214 mJ AS E Repetitive Avalanche (Note 1) 3.12 mJ AR dv/dt MOSFET dv/dt 100 V/ns Peak Diode Recovery dv/dt (Note 3) 20 V/ns P Power Dissipation (T = 25C) 312 W D C Derate Above 25C 2.5 W/C T ,T Operating and Storage Temperature Range 55 to +150 C J STG T Maximum Lead Temperature for Soldering, 1/8 from Case for 5 Seconds 300 C L Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Repetitive rating: pulsewidth limited by maximum junction temperature. 2. I = 4.8 A, R = 25 , starting T = 25C. AS G J 3. I < 44 A, di/dt 200 A/ms, VDD BVDSS, starting T = 25C. SD J 4. Essentially independent of operating temperature typical characteristics. THERMAL CHARACTERISTICS Symbol Parameter Value Unit R Thermal Resistance, Junction to Case, Max 0.37 C/W J C R Thermal Resistance, Junction to Ambient, Max 40 C/W J A PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Marking Package Packing Method Shipping (Qty / Packing) NVHL072N65S3 NVHL072N65S3 TO2473LD Tube 30 Units / Tube www.onsemi.com 2