SiHP12N50C, SiHB12N50C, SiHF12N50C Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Figure-of-Merit R x Q on g V (V) at T max. 560 V DS J R ()V = 10 V 0.555 DS(on) GS 100 % Avalanche Tested Q (Max.) (nC) 48 g Gate Charge Improved Q (nC) 12 gs T /Q Improved rr rr Q (nC) 15 gd Configuration Single Compliant to RoHS Directive 2002/95/EC TO-220AB TO-220 FULLPAK D S D S D G G G 2 D PAK (TO-263) S D G N-Channel MOSFET S ORDERING INFORMATION 2 Package TO-220AB D PAK (TO-263) TO-220 FULLPAK Lead (Pb)-free SiHP12N50C-E3 SiHB12N50C-E3 SiHF12N50C-E3 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C LIMIT TO220-AB TO-220 2 PARAMETER SYMBOL D PAK (TO-263) FULLPAK UNIT Drain-Source Voltage V 500 DS V Gate-Source Voltage V 30 GS T = 25 C 12 C a Continuous Drain Current (T = 150 C) V at 10 V I J GS D T = 100 C 7.5 A C c Pulsed Drain Current I 28 DM Linear Derating Factor 1.67 0.28 W/C b Single Pulse Avalanche Energy E 180 mJ AS Maximum Power Dissipation P 208 36 W D Operating Junction and Storage Temperature Range T , T - 55 to + 150 J stg C d Soldering Recommendations (Peak Temperature) for 10 s 300 Notes a. Limited by maximum junction temperature. b. V = 50 V, starting T = 25 C, L = 2.5 mH, R = 25 , I = 12 A. DD J g AS c. Repetitive rating pulse width limited by maximum junction temperature. d. 1.6 mm from case. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91388 www.vishay.com S10-0969-Rev. B, 26-Apr-10 1SiHP12N50C, SiHB12N50C, SiHF12N50C Vishay Siliconix THERMAL RESISTANCE RATINGS 2 PARAMETER SYMBOLTO220-AB D PAK (TO-263) TO-220 FULLPAK UNIT Maximum Junction-to-Ambient R 62 65 thJA Maximum Junction-to-Case (Drain) R 0.6 3.5 C/W thJC a Junction-to-Ambient (PCB mount) R 40 - thJA Note a. When mounted on 1 square PCB (FR-4 or G-10 material). SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 500 - - V DS GS D V Temperature Coefficient V /T Reference to 25 C, I = 1 mA - 0.6 - V/C DS DS J D Gate-Source Threshold Voltage (N) V V = V , I = 250 A 3.0 - 5.0 V GS(th) DS GS D Gate-Source Leakage I V = 30 V - - 100 nA GSS GS V = 500 V, V = 0 V - - 50 DS GS Zero Gate Voltage Drain Current I A DSS V = 400 V, V = 0 V, T = 125 C - - 250 DS GS J Drain-Source On-State Resistance R V = 10 V I = 4 A - 0.46 0.555 DS(on) GS D Forward Transconductance g V = 50 V, I = 3 A - 3 - S fs DS D Dynamic Input Capacitance C - 1375 - iss V = 0 V, GS Output Capacitance C -V = 25 V, 165- pF oss DS f = 1.0 MHz Reverse Transfer Capacitance C -17- rss Total Gate Charge Q -32 48 g Gate-Source Charge Q -1V = 10 V I = 10 A, V = 400 V2- nC gs GS D DS Gate-Drain Charge Q -15- gd Turn-On Delay Time t -18 - d(on) Rise Time t -35 - r V = 250 V, I = 10 A DD D ns R = 4.3 , V = 10 V g GS Turn-Off Delay Time t -23- d(off) Fall Time t -6- f Gate Input Resistance R f = 1 MHz, open drain - 1.1 - g Drain-Source Body Diode Characteristics D MOSFET symbol Continuous Source-Drain Diode Current I -- 12 S showing the A G integral reverse Pulsed Diode Forward Current I -- 28 SM S p - n junction diode Body Diode Voltage V T = 25 C, I = 10 A, V = 0 V - - 1.8 V SD J S GS Body Diode Reverse Recovery Time t - 580 - ns rr T = 25 C, I = I , dI/dt = 100 A/s, J F S Body Diode Reverse Recovery Charge Q -4.3 - C rr V = 20 V R Body Diode Reverse Recovery Current I -13 - A RRM Note The information shown here is a preliminary product proposal, not a commercial product data sheet. Vishay Siliconix is not committed to produce this or any similar product. This information should not be used for design purposes, nor construed as an offer to furnish or sell such products. www.vishay.com Document Number: 91388 2 S10-0969-Rev. B, 26-Apr-10