SiHS90N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES Low figure-of-merit (FOM) R x Q on g D Low input capacitance (C ) SUPER-247 iss Reduced switching and conduction losses Ultra low gate charge (Q ) g Avalanche energy rated (UIS) S G D Material categorization: for definitions of compliance G please see www.vishay.com/doc 99912 S APPLICATIONS Server and telecom power supplies N-Channel MOSFET Switch mode power supplies (SMPS) Power factor correction power supplies (PFC) Lighting PRODUCT SUMMARY V (V) at T max. 700 - High-intensity discharge (HID) DS J R () typ. at 25 C V = 10 V 0.025 - Fluorescent ballast lighting DS(on) GS Q (nC) max. 591 Industrial g Q (nC) 84 gs - Welding Q (nC) 160 gd - Induction heating Configuration Single - Motor drives - Battery chargers - Renewable energy - Solar (PV inverters) ORDERING INFORMATION Package Super-247 Lead (Pb)-free SiHS90N65E-GE3 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-source voltage V 650 DS V Gate-source voltage V 30 GS T = 25 C 87 C Continuous drain current (T = 150 C) V at 10 V I J GS D T = 100 C 55 A C a Pulsed drain current I 323 DM Linear derating factor 5W/C b Single pulse avalanche energy E 1930 mJ AS Maximum power dissipation P 625 W D Operating junction and storage temperature range T , T -55 to +150 C J stg Drain-source voltage slope T = 125 C 41 J dV/dt V/ns d Reverse diode dV/dt 4.1 c Soldering recommendations (peak temperature) for 10 s 300 C Notes a. Repetitive rating pulse width limited by maximum junction temperature b. V = 140 V, starting T = 25 C, L = 28.2 mH, R = 25 , I = 11.7 A DD J g AS c. 1.6 mm from case d. I I , dI/dt = 100 A/s, starting T = 25 C SD D J S21-0019-Rev. B, 18-Jan-2021 Document Number: 91585 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 SiHS90N65E www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum junction-to-ambient R -40 thJA C/W Maximum junction-to-case (drain) -0.2 R thJC SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-source breakdown voltage V V = 0 V, I = 250 A 650 - - V DS GS D V /T -0.83 - V temperature coefficient Reference to 25 C, I = 1 mA V/C DS DS J D Gate threshold voltage (N) V V = V , I = 250 A 2.0 - 4.0 V GS(th) DS GS D V = 20 V - - 100 nA GS Gate-source leakage I GSS V = 30 V - - 1 A GS V = 650 V, V = 0 V - - 1 DS GS Zero gate voltage drain current I A DSS V = 520 V, V = 0 V, T = 125 C - - 25 DS GS J Drain-source on-state resistance R V = 10 V I = 45 A - 0.025 0.029 DS(on) GS D a Forward transconductance g V = 30 V, I = 45 A - 32 - S fs DS D Dynamic Input capacitance C - 11 826 - iss V = 0 V, GS Output capacitance C -V = 100 V, 528- oss DS f = 300 kHz Reverse transfer capacitance C -9- rss pF Effective output capacitance, energy C - 384 - o(er) a related V = 0 V, V = 0 V to 520 V GS DS Effective output capacitance, time C - 1502 - o(tr) b related Total gate charge Q - 394 591 g Gate-source charge Q -8V = 10 V I = 45 A, V = 520 V4- nC gs GS D DS Gate-drain charge Q -160- gd Turn-on delay time t -85 128 d(on) Rise time t - 152 228 r V = 520 V, I = 45 A, DD D ns Turn-off delay time t -323485 V = 10 V, R = 9.1 d(off) GS g Fall time t -267401 f Gate input resistance R f = 1 MHz, open drain 0.6 1.2 2.4 g Drain-Source Body Diode Characteristics MOSFET symbol D Continuous source-drain diode current I -- 87 S showing the A G integral reverse Pulsed diode forward current I -- 323 S SM p - n junction diode Diode forward voltage V T = 25 C, I = 45 A, V = 0 V - 0.9 1.2 V SD J S GS Reverse recovery time t - 971 1942 ns rr T = 25 C, I = I = 45 A, J F S Reverse recovery charge Q -26 52 C rr dI/dt = 100 A/s, V = 25 V R Reverse recovery current I -42 - A RRM Notes a. C is a fixed capacitance that gives the same energy as C while V is rising from 0 % to 80 % V oss(er) oss DS DS b. C is a fixed capacitance that gives the same charging time as C while V is rising from 0 % to 80 % V oss(tr) oss DS DS S21-0019-Rev. B, 18-Jan-2021 Document Number: 91585 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000