SiHU4N80AE www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES D Low figure-of-merit (FOM) R x Q on g IPAK Low effective capacitance (C ) iss (TO-251) Reduced switching and conduction losses D G Ultra low gate charge (Q ) g Avalanche energy rated (UIS) Material categorization: for definitions of compliance S D G S please see www.vishay.com/doc 99912 N-Channel MOSFET APPLICATIONS Server and telecom power supplies PRODUCT SUMMARY Switch mode power supplies (SMPS) V (V) at T max. 850 DS J Power factor correction power supplies (PFC) R typ. () at 25 C V = 10 V 1.25 DS(on) GS Lighting Q max. (nC) 16.5 g - High-intensity discharge (HID) Q (nC) 3 gs - Fluorescent ballast lighting Q (nC) 5 gd Industrial Configuration Single - Welding - Induction heating - Motor drives - Battery chargers - Renewable energy - Solar (PV inverters) ORDERING INFORMATION Package IPAK (TO-251) Lead (Pb)-free and halogen-free SiHU4N80AE-GE3 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-source voltage V 800 DS V Gate-source voltage V 30 GS T = 25 C 4.1 C Continuous drain current (T = 150 C) V at 10 V I J GS D T = 100 C 2.6 A C a Pulsed drain current I 7.0 DM Linear derating factor 0.5 W/C b Single pulse avalanche energy E 6.9 mJ AS Maximum power dissipation P 62.5 W D Operating junction and storage temperature range T , T -55 to +150 C J stg Drain-source voltage slope T = 125 C 70 J dv/dt V/ns d Reverse diode dv/dt 0.2 c Soldering recommendations (peak temperature) For 10 s 260 C Notes a. Repetitive rating pulse width limited by maximum junction temperature b. V = 140 V, starting T = 25 C, L = 28.2 mH, R = 25 , I = 0.7 A DD J g AS c. 1.6 mm from case d. I I , di/dt = 100 A/s, starting T = 25 C SD D J S19-0203-Rev. A, 04-Mar-2019 Document Number: 92243 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000SiHU4N80AE www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum junction-to-ambient R -62 thJA C/W Maximum junction-to-case (drain) R -2.0 thJC SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-source breakdown voltage V V = 0 V, I = 250 A 800 - - V DS GS D V temperature coefficient V /T Reference to 25 C, I = 1 mA - 0.8 - V/C DS DS J D Gate-source threshold voltage (N) V V = V , I = 250 A 2.0 - 4.0 V GS(th) DS GS D V = 20 V - - 100 nA GS Gate-source leakage I GSS V = 30 V - - 10 A GS V = 800 V, V = 0 V - - 1 DS GS Zero gate voltage drain current I A DSS V = 640 V, V = 0 V, T = 125 C - - 10 DS GS J Drain-source on-state resistance R V = 10 V I = 1.0 A - 1.25 1.44 DS(on) GS D a Forward transconductance g V = 30 V, I = 2 A - 1.1 - S fs DS D Dynamic Input capacitance C -11 - iss V = 0 V, GS Output capacitance C V = 100 V, -3 - oss DS f = 1 MHz Reverse transfer capacitance C -5 - rss pF Effective output capacitance, energy C -10 - a o(er) related V = 0 V to 480 V, V = 0 V DS GS Effective output capacitance, time C -65 - o(tr) b related Total gate charge Q - 11 16.5 g Gate-source charge Q V = 10 V I = 2 A, V = 640 V -3 - nC gs GS D DS Gate-drain charge Q -5 - gd Turn-on delay time t -11 22 d(on) Rise time t -7 14 r V = 640 V, I = 2 A, DD D ns V = 10 V, R = 4.7 Turn-off delay time t GS g -12 24 d(off) Fall time t -25 50 f Gate input resistance R f = 1 MHz, open drain 1.7 3.5 7.0 g Drain-Source Body Diode Characteristics MOSFET symbol D Continuous source-drain diode current I -- 4.0 S showing the A integral reverse G p - n junction diode Pulsed diode forward current I -- 7.0 S SM Diode forward voltage V T = 25 C, I = 2 A, V = 0 V - - 1.2 V SD J S GS Reverse recovery time t - 266 532 ns rr T = 25 C, I = I = 2 A, J F S Reverse recovery charge Q -1.1 2.2 C rr di/dt = 100 A/s, V = 25 V R Reverse recovery current I -6.6 - A RRM Notes a. C is a fixed capacitance that gives the same energy as C while V is rising from 0 V to 480 V V oss(er) oss DS DSS b. C is a fixed capacitance that gives the same charging time as C while V is rising from 0 V to 480 V V oss(tr) oss DS DSS S19-0203-Rev. A, 04-Mar-2019 Document Number: 92243 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000