X-On Electronics has gained recognition as a prominent supplier of SIHU7N60E-GE3 mosfet across the USA, India, Europe, Australia, and various other global locations. SIHU7N60E-GE3 mosfet are a product manufactured by Vishay. We provide cost-effective solutions for mosfet, ensuring timely deliveries around the world.

SIHU7N60E-GE3 Vishay

SIHU7N60E-GE3 electronic component of Vishay
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See Product Specifications
Part No.SIHU7N60E-GE3
Manufacturer: Vishay
Category:MOSFET
Description: MOSFET 600V 600mOhm@10V 7A N-Ch E-SRS
Datasheet: SIHU7N60E-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 2.457 ea
Line Total: USD 2.46

Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Tue. 04 Jun to Mon. 10 Jun

MOQ : 1
Multiples : 1
1 : USD 2.457
10 : USD 1.9688
100 : USD 1.5632
500 : USD 1.2756
1000 : USD 1.0319
5000 : USD 0.9912

0 - WHS 2


Ships to you between Mon. 10 Jun to Wed. 12 Jun

MOQ : 3000
Multiples : 3000
3000 : USD 0.882
6000 : USD 0.8763
9000 : USD 0.8556

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Series
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Factory Pack Quantity :
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the SIHU7N60E-GE3 from our MOSFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SIHU7N60E-GE3 and other electronic components in the MOSFET category and beyond.

SiHU7N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY Low figure-of-merit (FOM) R x Q on g V (V) at T max. 650 DS J Low input capacitance (C ) iss R max. at 25 C ()V = 10 V 0.6 DS(on) GS Reduced switching and conduction losses Q max. (nC) 40 g Ultra low gate charge (Q ) g Q (nC) 5 gs Avalanche energy rated (UIS) Q (nC) 9 gd Material categorization: for definitions of Configuration Single compliance please see www.vishay.com/doc 99912 APPLICATIONS Server and telecom power supplies D IPAK Switch mode power supplies (SMPS) (TO-251) Power factor correction power supplies (PFC) D Lighting - High-intensity discharge (HID) G - Fluorescent ballast lighting S D Industrial G - Welding S - Induction heating N-Channel MOSFET - Motor drives - Battery chargers - Renewable energy - Solar (PV inverters) ORDERING INFORMATION Package IPAK (TO-251) Lead (Pb)-free and Halogen-free SiHU7N60E-GE3 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT 600 Drain-Source Voltage V DS T = -25 C, I = 250 A 575 V C D Gate-Source Voltage V 30 GS T = 25 C 7 C Continuous Drain Current (T = 150 C) V at 10 V I J GS D T = 100 C 5 A C a Pulsed Drain Current I 18 DM Linear Derating Factor 0.63 W/C b Single Pulse Avalanche Energy E 43 mJ AS Maximum Power Dissipation P 78 W D Operating Junction and Storage Temperature Range T , T -55 to +150 C J stg Drain-Source Voltage Slope T = 125 C 70 J dV/dt V/ns d Reverse Diode dV/dt 3 c Soldering Recommendations (Peak Temperature) for 10 s 300 C Notes a. Repetitive rating pulse width limited by maximum junction temperature. b. V = 50 V, starting T = 25 C, L = 13.8 mH, R = 25 , I = 2.5 A. DD J g AS c. 1.6 mm from case. d. I I , dI/dt = 100 A/s, starting T = 25 C. SD D J S15-0291-Rev. C, 23-Feb-15 Document Number: 91511 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000SiHU7N60E www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum Junction-to-Ambient R -62 thJA C/W Maximum Junction-to-Case (Drain) -1.6 R thJC SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 609 - - V DS GS D V /T -0.68 - V Temperature Coefficient Reference to 25 C, I = 1 mA V/C DS DS J D Gate-Source Threshold Voltage (N) V V = V , I = 250 A 2 - 4 V GS(th) DS GS D V = 20 V - - 100 nA GS Gate-Source Leakage I GSS V = 30 V - - 1 A GS V = 600 V, V = 0 V - - 1 DS GS Zero Gate Voltage Drain Current I A DSS V = 480 V, V = 0 V, T = 125 C - - 10 DS GS J Drain-Source On-State Resistance R V = 10 V I = 3.5 A - 0.5 0.6 DS(on) GS D Forward Transconductance g V = 50 V, I = 3.5 A - 1.9 - S fs DS D Dynamic Input Capacitance C - 680 - iss V = 0 V, GS Output Capacitance C -3V = 100 V, 9- oss DS f = 1 MHz Reverse Transfer Capacitance C -5- rss pF Effective Output Capacitance, Energy C -34 - a o(er) Related V = 0 V to 480 V, V = 0 V DS GS Effective Output Capacitance, Time C - 100 - o(tr) b Related Total Gate Charge Q -20 40 g Gate-Source Charge Q -5V = 10 V I = 3.5 A, V = 480 V- nC gs GS D DS Gate-Drain Charge Q -9- gd Turn-On Delay Time t -13 26 d(on) Rise Time t -13 26 r V = 480 V, I = 3.5 A, DD D ns Turn-Off Delay Time t -2448 V = 10 V, R = 9.1 d(off) GS g Fall Time t -1428 f Gate Input Resistance R f = 1 MHz, open drain - 1.1 - g Drain-Source Body Diode Characteristics MOSFET symbol D Continuous Source-Drain Diode Current I -- 7 S showing the A G integral reverse Pulsed Diode Forward Current I -- 18 SM S p - n junction diode Diode Forward Voltage V T = 25 C, I = 3.5 A, V = 0 V - - 1.2 V SD J S GS Reverse Recovery Time t - 230 - ns rr T = 25 C, I = I = 3.5 A, J F S Reverse Recovery Charge Q -1.9 - C rr dI/dt = 100 A/s, V = 20 V R Reverse Recovery Current I -14 - A RRM Notes a. C is a fixed capacitance that gives the same energy as C while V is rising from 0 % to 80 % V . oss(er) oss DS DSS b. C is a fixed capacitance that gives the same charging time as C while V is rising from 0 % to 80 % V . oss(tr) oss DS DSS S15-0291-Rev. C, 23-Feb-15 Document Number: 91511 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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