5.13 mm New Product SiJ482DP Vishay Siliconix N-Channel 80 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET a, g V (V) R () (Max.) Q (Typ.) 100 % R and UIS Tested I (A) DS DS(on) g g D Capable of Operating with 5 V Gate Drive 0.0062 at V = 10 V GS Material categorization: 0.0065 at V = 7.5 V 80 60 24 nC GS For definitions of compliance please see 0.0095 at V = 4.5 V GS www.vishay.com/doc 99912 APPLICATIONS PowerPAK SO-8L Single D DC/DC Primary Side Switch Synchronous Rectification High Current Switching G D 4 G 3 S S 2 S 1 N-Channel MOSFET S Ordering Information: SiJ482DP-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter Symbol LimitUnit V Drain-Source Voltage 80 DS V V 20 Gate-Source Voltage GS g T = 25 C C 60 g T = 70 C C 60 Continuous Drain Current (T = 150 C) I J D b, c T = 25 C A 21.1 b, c T = 70 C A 16.9 A I Pulsed Drain Current (t = 300 s) 100 DM g T = 25 C C 60 I Continuous Source-Drain Diode Current S b, c T = 25 C A 4.5 I Single Pulse Avalanche Current 30 AS L = 0.1 mH E mJ Single Pulse Avalanche Energy 45 AS T = 25 C 69.4 C T = 70 C 44.4 C P Maximum Power Dissipation W D b, c T = 25 C A 5 b, c T = 70 C 3.2 A Operating Junction and Storage Temperature Range T , T - 55 to 150 J stg C d, e 260 Soldering Recommendations (Peak Temperature) THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b, f R t 10 s 20 25 Maximum Junction-to-Ambient thJA C/W Maximum Junction-to-Case (Drain) Steady State R 1.3 1.8 thJC Notes: a. Based on T = 25 C. C b. Surface mounted on 1 x 1 FR4 board. c. t = 10 s. d. See solder profile (www.vishay.com/doc 73257). The PowerPAK SO-8L is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 65 C/W. g. Package limited. Document Number: 63728 For technical support, please contact: pmostechsupport vishay.com www.vishay.com S12-0544-Rev. A, 12-Mar-12 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 6.15 mmNew Product SiJ482DP Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J Parameter Symbol Test Conditions Min. Typ.Max.Unit Static V V = 0 V, I = 250 A Drain-Source Breakdown Voltage 80 V DS GS D V Temperature Coefficient V /T 36 DS DS J I = 250 A mV/C D V Temperature Coefficient V /T - 5.7 GS(th) GS(th) J V V = V , I = 250 A Gate-Source Threshold Voltage 1.5 2.7 V GS(th) DS GS D I V = 0 V, V = 20 V Gate-Source Leakage 100 nA GSS DS GS V = 80 V, V = 0 V 1 DS GS I Zero Gate Voltage Drain Current A DSS V = 80 V, V = 0 V, T = 55 C 10 DS GS J a I V 5 V, V = 10 V 30 A On-State Drain Current D(on) DS GS V = 10 V, I = 20 A 0.0051 0.0062 GS D a R V = 7.5 V, I = 15 A 0.0054 0.0065 Drain-Source On-State Resistance DS(on) GS D V = 4.5 V, I = 10 A 0.0068 0.0095 GS D a g V = 10 V, I = 20 A 68 S Forward Transconductance fs DS D b Dynamic Input Capacitance C 2425 iss C V = 40 V, V = 0 V, f = 1 MHz Output Capacitance 1180 pF oss DS GS C Reverse Transfer Capacitance 100 rss V = 40 V, V = 10 V, I = 10 A 47 71 DS GS D Total Gate Charge Q V = 40 V, V = 7.5 V, I = 10 A 36.5 55 g DS GS D 24 36 nC Q Gate-Source Charge V = 40 V, V = 4.5 V, I = 10 A 6.6 gs DS GS D Q Gate-Drain Charge 10.2 gd Q V = 40 V, V = 0 V Output Charge 69 105 oss DS GS R Gate Resistance f = 1 MHz 0.4 1.1 2.2 g Turn-On Delay Time t 14 28 d(on) t Rise Time V = 40 V, R = 4 11 22 r DD L I 10 A, V = 10 V, R = 1 Turn-Off Delay Time t 36 72 D GEN g d(off) t Fall Time 918 f ns Turn-On Delay Time t 16 32 d(on) t Rise Time V = 40 V, R = 4 13 26 r DD L 10 A, V = 7.5 V, R = 1 I Turn-Off Delay Time t 35 70 d(off) D GEN g t Fall Time 11 22 f Drain-Source Body Diode Characteristics I T = 25 C Continuous Source-Drain Diode Current 60 S C A a I 100 Pulse Diode Forward Current SM V I = 4 A Body Diode Voltage 0.73 1.1 V SD S t Body Diode Reverse Recovery Time 46 90 ns rr Q Body Diode Reverse Recovery Charge 44 86 nC rr I = 10 A, dI/dt = 100 A/s, T = 25 C F J t Reverse Recovery Fall Time 21 a ns t Reverse Recovery Rise Time 25 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com For technical support, please contact: pmostechsupport vishay.com Document Number: 63728 2 S12-0544-Rev. A, 12-Mar-12 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000