Product Information

SIR106DP-T1-RE3

SIR106DP-T1-RE3 electronic component of Vishay

Datasheet
MOSFET 100V Vds 20V Vgs PowerPAK SO-8

Manufacturer: Vishay
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 2.3517 ea
Line Total: USD 2.35

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 6000
Multiples : 1
6000 : USD 1.3375
8000 : USD 1.3241
10000 : USD 1.3109
12000 : USD 1.2977
15000 : USD 1.2848
20000 : USD 1.2719
25000 : USD 1.2592
30000 : USD 1.2466
50000 : USD 1.2341

0 - WHS 2


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 1
Multiples : 1
1 : USD 2.3517
10 : USD 1.9012
100 : USD 1.3942
500 : USD 1.2106
1000 : USD 1.1212
5000 : USD 1.0319

0 - WHS 3


Ships to you between Thu. 30 May to Mon. 03 Jun

MOQ : 1
Multiples : 1
1 : USD 2.4491
10 : USD 1.753
100 : USD 1.4251
500 : USD 1.1654
1000 : USD 0.9908
3000 : USD 0.9362
6000 : USD 0.9071
9000 : USD 0.9071

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Series
Transistor Type
Brand
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
LoadingGif

Notes:- Show Stocked Products With Similar Attributes.
Image Description
SIR158DP-T1-GE3 electronic component of Vishay SIR158DP-T1-GE3

Vishay Semiconductors MOSFET 30V 60A 83W 1.8mohm 10V
Stock : 688

SIR164DP-T1-GE3 electronic component of Vishay SIR164DP-T1-GE3

MOSFET 30V 50A 69W 2.5mohm @ 10V
Stock : 4829

SIR140DP-T1-RE3 electronic component of Vishay SIR140DP-T1-RE3

MOSFET 25V Vds 20V Vgs PowerPAK SO-8
Stock : 0

SiR108DP-T1-RE3 electronic component of Vishay SiR108DP-T1-RE3

MOSFET 100V Vds 20V Vgs PowerPAK SO-8
Stock : 5790

SIR164ADP-T1-GE3 electronic component of Vishay SIR164ADP-T1-GE3

MOSFET 30V Vds 20V Vgs PowerPAK SO-8
Stock : 0

SIR124DP-T1-RE3 electronic component of Vishay SIR124DP-T1-RE3

MOSFET 80V Vds; 20V Vgs PowerPAK SO-8
Stock : 0

SIR112DP-T1-RE3 electronic component of Vishay SIR112DP-T1-RE3

MOSFET 40V Vds 20V Vgs PowerPAK SO-8
Stock : 0

SIR120DP-T1-RE3 electronic component of Vishay SIR120DP-T1-RE3

MOSFET N-Channel 80 V D-S MOSFET
Stock : 10

SIR150DP-T1-RE3 electronic component of Vishay SIR150DP-T1-RE3

MOSFET 45-V D-S MOSFET N-CHANNEL PowerPAK
Stock : 0

SIR122DP-T1-RE3 electronic component of Vishay SIR122DP-T1-RE3

MOSFET 80V Vds 20V Vgs PowerPAK SO-8
Stock : 75775

Image Description
SIS106DN-T1-GE3 electronic component of Vishay SIS106DN-T1-GE3

MOSFET 60V Vds 20V Vgs PowerPAK 1212-8
Stock : 0

SIA106DJ-T1-GE3 electronic component of Vishay SIA106DJ-T1-GE3

MOSFET 60V Vds 20V Vgs PowerPAK SC-70
Stock : 11993

SI7434ADP-T1-RE3 electronic component of Vishay SI7434ADP-T1-RE3

MOSFET 250V Vds 20V Vgs PowerPAK SO-8
Stock : 0

DMT6018LDR-13 electronic component of Diodes Incorporated DMT6018LDR-13

MOSFET MOSFET BVDSS: 41V-60V
Stock : 8510

SIS932EDN-T1-GE3 electronic component of Vishay SIS932EDN-T1-GE3

MOSFET 30V Vds 12V Vgs PowerPAK 1212-8
Stock : 6000

FDD9507L-F085 electronic component of ON Semiconductor FDD9507L-F085

MOSFET PMOS DPAK -40V -100A 4.4 mOhm
Stock : 0

SI4850BDY-T1-GE3 electronic component of Vishay SI4850BDY-T1-GE3

MOSFET 60V Vds 20V Vgs SO-8
Stock : 5579

IPW60R090CFD7XKSA1 electronic component of Infineon IPW60R090CFD7XKSA1

MOSFET HIGH POWER_NEW
Stock : 0

DMT3006LFV-13 electronic component of Diodes Incorporated DMT3006LFV-13

MOSFET MOSFET BVDSS: 25V-30V
Stock : 0

DMP2021UTSQ-13 electronic component of Diodes Incorporated DMP2021UTSQ-13

MOSFET MOSFET BVDSS: 8V-24V
Stock : 2478

6.15 mm SiR106DP www.vishay.com Vishay Siliconix N-Channel 100 V (D-S) MOSFET FEATURES PowerPAK SO-8 Single D TrenchFET Gen IV power MOSFET D 8 D 7 Very low R - Q figure-of-merit (FOM) DS g D 6 5 Tuned for the lowest R - Q FOM DS oss 100 % R and UIS tested g Material categorization: for definitions of 1 compliance please see www.vishay.com/doc 99912 2 S 3 S 4 S 1 APPLICATIONS D G Top View Bottom View Synchronous rectification Primary side switch PRODUCT SUMMARY V (V) 100 DC/DC converters DS G R max. ( ) at V = 10 V 0.0080 DS(on) GS OR-ing R max. ( ) at V = 7.5 V 0.0090 DS(on) GS Power supplies Q typ. (nC) 32 g Motor drive control S I (A) 65.8 D Battery and load switch N-Channel MOSFET Configuration Single ORDERING INFORMATION Package PowerPAK SO-8 Lead (Pb)-free and halogen-free SiR106DP-T1-RE3 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A PARAMETER SYMBOL LIMIT UNIT Drain-source voltage V 100 DS V Gate-source voltage V 20 GS T = 25 C 65.8 C T = 70 C 52.6 C Continuous drain current (T = 150 C) I J D b, c T = 25 C 16.1 A b, c T = 70 C 12.9 A A Pulsed drain current (t = 100 s) I 150 DM T = 25 C 75.7 C Continuous source-drain diode current I S b, c T = 25 C 4.5 A Single pulse avalanche current I 30 AS L = 0.1 mH Single pulse avalanche energy E 45 mJ AS T = 25 C 83.3 C T = 70 C 53.3 C Maximum power dissipation P W D b, c T = 25 C 5 A b, c T = 70 C 3.2 A Operating junction and storage temperature range T , T -55 to +150 J stg C c Soldering recommendations (peak temperature) 260 THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYPICAL MAXIMUM UNIT b Maximum junction-to-ambient t 10 s R 20 25 thJA C/W Maximum junction-to-case (drain) Steady state R 1.2 1.5 thJC Notes a. Package limited b. Surface mounted on 1 x 1 FR4 board c. t = 10 s d. See solder profile (www.vishay.com/doc 73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components f. Maximum under steady state conditions is 65 C/W g. T = 25 C C S17-1596-Rev. A, 16-Oct-17 Document Number: 75731 1 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 5.15 mm SiR106DP www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOL TEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-source breakdown voltage V V = 0 V, I = 250 A 100 - - V DS GS D V temperature coefficient V /T I = 10 mA - 61 - DS DS J D mV/C V temperature coefficient V /T I = 250 A - -6.3 - GS(th) GS(th) J D Gate-source threshold voltage V V = V , I = 250 A 2 - 3.4 V GS(th) DS GS D Gate-source leakage I V = 0 V, V = 20 V - - 100 nA GSS DS GS V = 100 V, V = 0 V - - 1 DS GS Zero gate voltage drain current I A DSS V = 100 V, V = 0 V, T = 70 C - - 15 DS GS J a On-state drain current I V 10 V, V =10 V 40 - - A D(on) DS GS V =10 V, I = 15 A - 0.0066 0.0080 GS D a Drain-source on-state resistance R DS(on) V = 7.5 V, I = 10 A - 0.0070 0.0090 GS D a Forward transconductance g V = 15 V, I = 15 A - 60 - S fs DS D b Dynamic Input capacitance C - 3610 - iss Output capacitance C V = 50 V, V = 0 V, f = 1 MHz - 270 - pF oss DS GS Reverse transfer capacitance C - 16.5 - rss V = 50 V, V = 10 V, I = 15 A - 42.5 64 DS GS D Total gate charge Q g -32 48 Gate-source charge Q V = 50 V, V = 7.5 V, I = 15 A - 12.7 - nC gs DS GS D Gate-drain charge Q -6.6 - gd Output charge Q V = 50 V, V = 0 V - 39 - oss DS GS Gate resistance R f = 1 MHz 0.3 0.8 1.4 g Turn-on delay time t -15 30 d(on) Rise time t -7 14 r V = 50 V, R = 3.33 , I 15 A, DD L D V = 10 V, R = 1 Turn-off delay time t GEN g -27 54 d(off) Fall time t -6 12 f ns Turn-on delay time t -20 40 d(on) Rise time t -8 16 r V = 50 V, R = 3.33 , I 15 A, DD L D V = 7.5 V, R = 1 Turn-off delay time t GEN g -26 52 d(off) Fall time t -7 14 f Drain-Source Body Diode Characteristics Continuous source-drain diode current I T = 25 C - - 65.8 S C A Pulse diode forward current I - - 150 SM Body diode voltage V I = 5 A, V = 0 V - 0.75 1.1 V SD S GS Body diode reverse recovery time t - 50 100 ns rr Body diode reverse recovery charge Q - 100 200 nC rr I = 10 A, di/dt = 100 A/s, T = 25 C F J Reverse recovery fall time t -39 - a ns Reverse recovery rise time t -11 - b Notes a. Pulse test pulse width 300 s, duty cycle 2 % b. Guaranteed by design, not subject to production testing Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S17-1596-Rev. A, 16-Oct-17 Document Number: 75731 2 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
BC
BC COMPONENTS
BC COMPONENTS (VISHAY)
BCC
BEYSCHLAG
DALE
DALE (VISHAY)
DLE
DRALORIC / VISHAY
General Semi
GENERAL SEMI.
GENERAL SEMICONDUCTOR (VISHAY)
GS
HUNTINGTON ELECTRIC
Micro-Measurements (Division of Vishay Precision Group)
ROEDERSTEIN
ROEDERSTEIN / VISHAY
SFERNICE (VISHAY)
SFR
SILICONIX
SILICONIX (VISHAY)
SIX
SPD
SPECTROL
SPECTROL ELECTRONICS
SPP
SPRAGUE (VISHAY)
TECHNO
VIR
Vishay BC Components
Vishay Beyschlag
Vishay Cera-Mite
Vishay Dale
Vishay Draloric
Vishay Electro-Films
Vishay Huntington
Vishay Mills
Vishay Milwaukee
Vishay Polytech
Vishay Roederstein
Vishay Sfernice
Vishay Siliconix
Vishay Spectrol
Vishay Sprague
Vishay Tansitor
Vishay Techno
Vishay Thin Film
Vishay Vitramon
Vishay / BC Components
Vishay / Beyschlag
Vishay / Cera-Mite
Vishay / Dale
Vishay / Draloric
Vishay / Electro-Films
Vishay / Huntington
VISHAY / LITE-ON
Vishay / MCB Industrie
Vishay / Mills
Vishay / Milwaukee
Vishay / Polytech
Vishay / Roederstein
Vishay / Sfernice
Vishay / Siliconix
Vishay / Spectrol
Vishay / Sprague
Vishay / Tansitor
Vishay / Techno
Vishay / Thin Film
Vishay / Vitramon
Vishay BC Components
Vishay Beyschlag
Vishay Beyschlag/Draloric/BC Components
VISHAY CERA-MITE
Vishay Dale
VISHAY DRALORIC
VISHAY ELECTRO-FILMS
VISHAY FOIL RESISTORS
Vishay Foil Resistors (Division of Vishay Precision Group)
VISHAY FOIL RESISTORS / VPG
Vishay General Semiconductor
Vishay Huntington Electric Inc.
Vishay Intertech
Vishay Micro-Measurements
VISHAY OPTO
Vishay Precision
Vishay Precision Group
Vishay Precision Group Foil Resistors
VISHAY ROEDERSTEIN
VISHAY SEMICONDUCTOR
Vishay Semiconductor Diodes Division
Vishay Semiconductor Opto Division
Vishay Semiconductors
Vishay Sfernice
Vishay Siliconix
VISHAY SMALL SIGNAL
VISHAY SPECIALTY CAPACITORS
Vishay Spectrol
Vishay Sprague
VISHAY TANSITOR
VISHAY TECHNO
Vishay Thin Film
Vishay Vitramon
VISHAY/BC COMPONENTS
Vishay/Beyschlag
Vishay/Dale
Vishay/General Semic
VISHAY/SILICONIX
VishayBC Components
VishayBeyschlag
VishayElectro-Films
VishayGeneral Semiconductor
VishaySemiconductors
VishaySprague
VishayVitramon
VIT
VITRAMON (VISHAY)
VITRAMON/VISHAY
VITROMON
VSC
VSO
VSS

Looking for help? Visit our FAQ's Section to answer to all your questions

 

X-ON Worldwide Electronics

Welcome To X-ON ELECTRONICS
For over three decades, we have been advocating and shaping the electronic components industry. Our management complements our worldwide business scope and focus. We are committed to innovation, backed by a strong business foundation. If you need a trustworthy supplier of electronic components for your business – look no further.
 

Copyright ©2024  X-ON Electronic Services. All rights reserved.
Please ensure you have read and understood our Terms & Conditions before purchasing.
All prices exclude GST.

Image for all the cards that are accepted Image for all the cards that are accepted Image for all the cards that are accepted Image for all the cards that are accepted Image for all the cards that are accepted