X-On Electronics has gained recognition as a prominent supplier of SIR164DP-T1-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SIR164DP-T1-GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SIR164DP-T1-GE3 Vishay

SIR164DP-T1-GE3 electronic component of Vishay
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Part No.SIR164DP-T1-GE3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET 30V 50A 69W 2.5mohm @ 10V
Datasheet: SIR164DP-T1-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.357 ea
Line Total: USD 1.36 
Availability - 4511
Ship by Wed. 13 Nov to Fri. 15 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
75
Ship by Thu. 14 Nov to Tue. 19 Nov
MOQ : 1
Multiples : 1
1 : USD 0.9212
10 : USD 0.8965
30 : USD 0.8794
100 : USD 0.8641

4511
Ship by Wed. 13 Nov to Fri. 15 Nov
MOQ : 1
Multiples : 1
1 : USD 1.357
10 : USD 1.0718
100 : USD 0.7855
500 : USD 0.6659
1000 : USD 0.6279
3000 : USD 0.6037

   
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We are delighted to provide the SIR164DP-T1-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SIR164DP-T1-GE3 and other electronic components in the MOSFETs category and beyond.

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New Product SiR164DP Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 a, e V (V) R () Q (Typ.) I (A) DS DS(on) g D Definition 0.0025 at V = 10 V 50 TrenchFET Gen III Power MOSFET GS 30 40.6 nC New MOSFET Technology Optimized for 0.0032 at V = 4.5 V 50 GS Ringing Reduction in Switching Application PowerPAK SO-8 100 % R and UIS Tested g Compliant to RoHS Directive 2002/95/EC S D 6.15 mm 5.15 mm 1 APPLICATIONS S 2 S DC/DC 3 G Notebook CPU Core 4 D 8 G D 7 D 6 D 5 S Bottom View Ordering Information: SiR164DP-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol Limit Unit Drain-Source Voltage V 30 DS V V Gate-Source Voltage 20 GS e T = 25 C C 50 e T = 70 C 50 C Continuous Drain Current (T = 150 C) I J D b, c T = 25 C A 33.3 b, c T = 70 C A 26.5 A Pulsed Drain Current I 70 DM e T = 25 C C 50 I Continuous Source-Drain Diode Current S b, c T = 25 C A 4.7 Single Pulse Avalanche Current I 40 AS L = 0.1 mH E mJ Avalanche Energy 80 AS T = 25 C 69 C T = 70 C 44.4 C P Maximum Power Dissipation W D b, c T = 25 C A 5.2 b, c T = 70 C A 3.3 Operating Junction and Storage Temperature Range T , T - 55 to 150 J stg C f, g 260 Soldering Recommendations (Peak Temperature) THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b, d R t 10 s 19 24 thJA Maximum Junction-to-Ambient C/W R Maximum Junction-to-Case (Drain) Steady State 1.2 1.8 thJC Notes: a. Based on T = 25 C. C b. Surface Mounted on 1 x 1 FR4 board. c. t = 10 s. d. Maximum under Steady State conditions is 65 C/W. e. Package limited. f. See Solder Profile (www.vishay.com/ppg 73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. g. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. Document Number: 64827 www.vishay.com S09-0701-Rev. A, 27-Apr-09 1New Product SiR164DP Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min. Typ.Max.Unit Static V V = 0 V, I = 250 A Drain-Source Breakdown Voltage 30 V DS GS D V Temperature Coefficient V /T 25 DS DS J I = 250 A mV/C D V Temperature Coefficient V /T - 5.9 GS(th) GS(th) J V = V , I = 250 A Gate-Source Threshold Voltage V 1.2 2.5 V GS(th) DS GS D I V = 0 V, V = 20 V Gate-Source Leakage 100 nA GSS DS GS V = 30 V, V = 0 V 1 DS GS I Zero Gate Voltage Drain Current A DSS V = 30 V, V = 0 V, T = 55 C 10 DS GS J a I V 5 V, V = 10 V 30 A On-State Drain Current D(on) DS GS V = 10 V, I = 15 A 0.00205 0.0025 GS D a R Drain-Source On-State Resistance DS(on) V = 4.5 V, I = 10 A 0.0026 0.0032 GS D a g V = 15 V, I = 15 A 95 S Forward Transconductance fs DS D b Dynamic Input Capacitance C 3950 iss C V = 15 V, V = 0 V, f = 1 MHz Output Capacitance 740 pF oss DS GS Reverse Transfer Capacitance C 460 rss V = 15 V, V = 10 V, I = 10 A 82 123 DS GS D Q Total Gate Charge g 40.6 61 nC Gate-Source Charge Q V = 15 V, V = 4.5 V, I = 10 A 9.4 gs DS GS D Q Gate-Drain Charge 15.4 gd Gate Resistance R f = 1 MHz 0.2 0.8 1.6 g t Turn-On Delay Time 35 60 d(on) Rise Time t 41 70 r V = 15 V, R = 1.5 DD L I 10 A, V = 4.5 V, R = 1 t Turn-Off Delay Time D GEN g 52 90 d(off) t Fall Time 39 70 f ns t Turn-On Delay Time 15 30 d(on) t Rise Time V = 15 V, R = 1.5 10 20 r DD L I 10 A, V = 10 V, R = 1 t Turn-Off Delay Time D GEN g 40 70 d(off) t Fall Time 918 f Drain-Source Body Diode Characteristics I T = 25 C Continuous Source-Drain Diode Current 50 S C A a I 70 Pulse Diode Forward Current SM Body Diode Voltage V I = 3 A 0.71 1.1 V SD S t Body Diode Reverse Recovery Time 31 60 ns rr Q Body Diode Reverse Recovery Charge 22 42 nC rr I = 10 A, dI/dt = 100 A/s, T = 25 C F J t Reverse Recovery Fall Time 14 a ns t Reverse Recovery Rise Time 17 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 64827 2 S09-0701-Rev. A, 27-Apr-09

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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