New Product SiR164DP Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 a, e V (V) R () Q (Typ.) I (A) DS DS(on) g D Definition 0.0025 at V = 10 V 50 TrenchFET Gen III Power MOSFET GS 30 40.6 nC New MOSFET Technology Optimized for 0.0032 at V = 4.5 V 50 GS Ringing Reduction in Switching Application PowerPAK SO-8 100 % R and UIS Tested g Compliant to RoHS Directive 2002/95/EC S D 6.15 mm 5.15 mm 1 APPLICATIONS S 2 S DC/DC 3 G Notebook CPU Core 4 D 8 G D 7 D 6 D 5 S Bottom View Ordering Information: SiR164DP-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol Limit Unit Drain-Source Voltage V 30 DS V V Gate-Source Voltage 20 GS e T = 25 C C 50 e T = 70 C 50 C Continuous Drain Current (T = 150 C) I J D b, c T = 25 C A 33.3 b, c T = 70 C A 26.5 A Pulsed Drain Current I 70 DM e T = 25 C C 50 I Continuous Source-Drain Diode Current S b, c T = 25 C A 4.7 Single Pulse Avalanche Current I 40 AS L = 0.1 mH E mJ Avalanche Energy 80 AS T = 25 C 69 C T = 70 C 44.4 C P Maximum Power Dissipation W D b, c T = 25 C A 5.2 b, c T = 70 C A 3.3 Operating Junction and Storage Temperature Range T , T - 55 to 150 J stg C f, g 260 Soldering Recommendations (Peak Temperature) THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b, d R t 10 s 19 24 thJA Maximum Junction-to-Ambient C/W R Maximum Junction-to-Case (Drain) Steady State 1.2 1.8 thJC Notes: a. Based on T = 25 C. C b. Surface Mounted on 1 x 1 FR4 board. c. t = 10 s. d. Maximum under Steady State conditions is 65 C/W. e. Package limited. f. See Solder Profile (www.vishay.com/ppg 73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. g. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. Document Number: 64827 www.vishay.com S09-0701-Rev. A, 27-Apr-09 1New Product SiR164DP Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min. Typ.Max.Unit Static V V = 0 V, I = 250 A Drain-Source Breakdown Voltage 30 V DS GS D V Temperature Coefficient V /T 25 DS DS J I = 250 A mV/C D V Temperature Coefficient V /T - 5.9 GS(th) GS(th) J V = V , I = 250 A Gate-Source Threshold Voltage V 1.2 2.5 V GS(th) DS GS D I V = 0 V, V = 20 V Gate-Source Leakage 100 nA GSS DS GS V = 30 V, V = 0 V 1 DS GS I Zero Gate Voltage Drain Current A DSS V = 30 V, V = 0 V, T = 55 C 10 DS GS J a I V 5 V, V = 10 V 30 A On-State Drain Current D(on) DS GS V = 10 V, I = 15 A 0.00205 0.0025 GS D a R Drain-Source On-State Resistance DS(on) V = 4.5 V, I = 10 A 0.0026 0.0032 GS D a g V = 15 V, I = 15 A 95 S Forward Transconductance fs DS D b Dynamic Input Capacitance C 3950 iss C V = 15 V, V = 0 V, f = 1 MHz Output Capacitance 740 pF oss DS GS Reverse Transfer Capacitance C 460 rss V = 15 V, V = 10 V, I = 10 A 82 123 DS GS D Q Total Gate Charge g 40.6 61 nC Gate-Source Charge Q V = 15 V, V = 4.5 V, I = 10 A 9.4 gs DS GS D Q Gate-Drain Charge 15.4 gd Gate Resistance R f = 1 MHz 0.2 0.8 1.6 g t Turn-On Delay Time 35 60 d(on) Rise Time t 41 70 r V = 15 V, R = 1.5 DD L I 10 A, V = 4.5 V, R = 1 t Turn-Off Delay Time D GEN g 52 90 d(off) t Fall Time 39 70 f ns t Turn-On Delay Time 15 30 d(on) t Rise Time V = 15 V, R = 1.5 10 20 r DD L I 10 A, V = 10 V, R = 1 t Turn-Off Delay Time D GEN g 40 70 d(off) t Fall Time 918 f Drain-Source Body Diode Characteristics I T = 25 C Continuous Source-Drain Diode Current 50 S C A a I 70 Pulse Diode Forward Current SM Body Diode Voltage V I = 3 A 0.71 1.1 V SD S t Body Diode Reverse Recovery Time 31 60 ns rr Q Body Diode Reverse Recovery Charge 22 42 nC rr I = 10 A, dI/dt = 100 A/s, T = 25 C F J t Reverse Recovery Fall Time 14 a ns t Reverse Recovery Rise Time 17 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 64827 2 S09-0701-Rev. A, 27-Apr-09