New Product SiR414DP Vishay Siliconix N-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 a V (V) R () Q (Typ.) I (A) DS DS(on) g D Definition 0.0028 at V = 10 V 50 GS TrenchFET Power MOSFET 40 38 nC 0.0032 at V = 4.5 V 50 GS 100 % R Tested g 100 % UIS Tested PowerPAK SO-8 APPLICATIONS Synchronous Rectification S 6.15 mm 5.15 mm Secondary Side DC/DC 1 S D 2 S 3 G 4 D 8 D 7 D G 6 D 5 Bottom View S Ordering Information: SiR414DP-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol LimitUnit Drain-Source Voltage V 40 DS V V Gate-Source Voltage 20 GS a T = 25 C C 50 a T = 70 C C 50 Continuous Drain Current (T = 150 C) I J D b, c T = 25 C 33 A b, c T = 70 C A 26 A I Pulsed Drain Current 70 DM a T = 25 C C 50 I Continuous Source-Drain Diode Current S b, c T = 25 C A 4.9 I Single Pulse Avalanche Current 40 AS L = 0.1 mH E 80 mJ Single Pulse Avalanche Energy AS T = 25 C 83 C T = 70 C 53 C P Maximum Power Dissipation W D b, c T = 25 C A 5.4 b, c T = 70 C 3.4 A T , T Operating Junction and Storage Temperature Range - 55 to 150 J stg C d, e 260 Soldering Recommendations (Peak Temperature) THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b, f R t 10 s 18 23 thJA Maximum Junction-to-Ambient C/W R Maximum Junction-to-Case (Drain) Steady State 1.0 1.5 thJC Notes: a. Package Limited. b. Surface Mounted on 1 x 1 FR4 board. c. t = 10 s. d. See Solder Profile (www.vishay.com/ppg 64727). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under Steady State conditions is 65 C/W. Document Number: 64727 www.vishay.com S09-0319-Rev. A, 02-Mar-09 1New Product SiR414DP Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min. Typ.Max.Unit Static V V = 0 V, I = 250 A Drain-Source Breakdown Voltage 40 V DS GS D V Temperature Coefficient V /T 43 DS DS J I = 250 A mV/C D V Temperature Coefficient V /T - 6 GS(th) GS(th) J V V = V , I = 250 A Gate-Source Threshold Voltage 1.0 2.5 V GS(th) DS GS D I V = 0 V, V = 20 V Gate-Source Leakage 100 nA GSS DS GS V = 40 V, V = 0 V 1 DS GS Zero Gate Voltage Drain Current I A DSS V = 40 V, V = 0 V, T = 55 C 10 DS GS J a I V 5 V, V = 10 V 30 A On-State Drain Current D(on) DS GS V = 10 V, I = 20 A 0.0023 0.0028 GS D a R Drain-Source On-State Resistance DS(on) V = 4.5 V, I = 20 A 0.0026 0.0032 GS D a g V = 15 V, I = 20 A 102 S Forward Transconductance fs DS D b Dynamic C Input Capacitance 4750 iss Output Capacitance C V = 20 V, V = 0 V, f = 1 MHz 610 pF oss DS GS C Reverse Transfer Capacitance 275 rss V = 20 V, V = 10 V, I = 20 A 78 117 DS GS D Q Total Gate Charge g 38 57 nC Q Gate-Source Charge V = 20 V, V = 4.5 V, I = 20 A 13 gs DS GS D Q Gate-Drain Charge 11 gd R Gate Resistance f = 1 MHz 0.2 0.7 1.4 g t Turn-On Delay Time 14 25 d(on) t Rise Time V = 20 V, R = 2 918 r DD L I 10 A, V = 10 V, R = 1 t Turn-Off Delay Time D GEN g 41 65 d(off) Fall Time t 918 f ns t Turn-On Delay Time 33 42 d(on) Rise Time t 22 35 V = 20 V, R = 2 r DD L I 10 A, V = 4.5 V, R = 1 t Turn-Off Delay Time D GEN g 42 65 d(off) Fall Time t 13 25 f Drain-Source Body Diode Characteristics Continuous Source-Drain Diode I T = 25 C 50 S C Current A a I 60 Pulse Diode Forward Current SM V I = 5 A Body Diode Voltage 0.75 1.1 V SD S Body Diode Reverse Recovery Time t 40 60 ns rr Q Body Diode Reverse Recovery Charge 48 72 nC rr I = 10 A, dI/dt = 100 A/s, T = 25 C F J Reverse Recovery Fall Time t 24 a ns t Reverse Recovery Rise Time 16 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 64727 2 S09-0319-Rev. A, 02-Mar-09