New Product SiR870DP Vishay Siliconix N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET a V (V) R () Q (Typ.) I (A) DS DS(on) g D 100 % R and UIS Tested g 0.0060 at V = 10 V Material categorization: 60 GS For definitions of compliance please see 0.0064 at V = 7.5 V 100 60 26.7 nC GS www.vishay.com/doc 99912 0.0078 at V = 4.5 V 60 GS APPLICATIONS PowerPAK SO-8 D Fixed Telecom DC/DC Converter S Primary and Secondary Side 6.15 mm 5.15 mm 1 S Switch 2 S 3 G G 4 D 8 D 7 D S 6 D 5 N-Channel MOSFET Bottom View Ordering Information: SiR870DP-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter Symbol LimitUnit Drain-Source Voltage V 100 DS V V Gate-Source Voltage 20 GS a T = 25 C C 60 a T = 70 C 60 C Continuous Drain Current (T = 150 C) I J D b, c T = 25 C A 22.8 b, c T = 70 C A 18.2 A I Pulsed Drain Current 100 DM a T = 25 C C 60 I Continuous Source-Drain Diode Current S b, c T = 25 C A 5.6 I Single Pulse Avalanche Current 35 AS L = 0.1 mH E mJ Single Pulse Avalanche Energy 61 AS T = 25 C 104 C T = 70 C 66.6 C Maximum Power Dissipation P W D b, c T = 25 C A 6.25 b, c T = 70 C A 4 T , T Operating Junction and Storage Temperature Range - 55 to 150 J stg C d, e Soldering Recommendations (Peak Temperature) 260 THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b, f R t 10 s 15 20 thJA Maximum Junction-to-Ambient C/W Maximum Junction-to-Case (Drain) Steady State R 0.9 1.2 thJC Notes: a. Package limited. b. Surface mounted on 1 x 1 FR4 board. c. t = 10 s. d. See solder profile (www.vishay.com/doc 73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 54 C/W. For technical questions, contact: pmostechsupport vishay.com Document Number: 67197 www.vishay.com S12-2120-Rev. B, 03-Sep-12 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000New Product SiR870DP Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J Parameter Symbol Test Conditions Min. Typ.Max.Unit Static V V = 0 V, I = 250 A Drain-Source Breakdown Voltage 100 V DS GS D V Temperature Coefficient V /T 60 DS DS J I = 250 A mV/C D V Temperature Coefficient V /T - 6 GS(th) GS(th) J V V = V , I = 250 A Gate-Source Threshold Voltage 1.2 3 V GS(th) DS GS D I V = 0 V, V = 20 V Gate-Source Leakage 100 nA GSS DS GS V = 100 V, V = 0 V 1 DS GS I Zero Gate Voltage Drain Current A DSS V = 100 V, V = 0 V, T = 55 C 10 DS GS J a I V 5 V, V = 10 V 30 A On-State Drain Current D(on) DS GS V = 10 V, I = 20 A 0.0050 0.0060 GS D a R V = 7.5 V, I = 20 A 0.0053 0.0064 Drain-Source On-State Resistance DS(on) GS D V = 4.5 V, I = 15 A 0.0065 0.0078 GS D a g V = 10 V, I = 20 A 80 S Forward Transconductance fs DS D b Dynamic Input Capacitance C 2840 iss C V = 50 V, V = 0 V, f = 1 MHz Output Capacitance 1475 pF oss DS GS C Reverse Transfer Capacitance 99 rss V = 50 V, V = 10 V, I = 20 A 55.7 84 DS GS D Total Gate Charge Q V = 50 V, V = 7.5 V, I = 20 A 42.5 64 g DS GS D 26.7 40 nC Q Gate-Source Charge V = 50 V, V = 4.5 V, I = 20 A 8.4 gs DS GS D Q Gate-Drain Charge 11.7 gd Gate Resistance R f = 1 MHz 0.3 0.95 1.9 g t Turn-On Delay Time 12 24 d(on) Rise Time t 10 20 V = 50 V, R = 2.5 r DD L I 20 A, V = 10 V, R = 1 t Turn-Off Delay Time D GEN g 38 70 d(off) Fall Time t 816 f ns t Turn-On Delay Time 15 30 d(on) Rise Time t 15 30 V = 50 V, R = 2.5 r DD L I 20 A, V = 7.5 V, R = 1 t Turn-Off Delay Time D GEN g 35 70 d(off) Fall Time t 816 f Drain-Source Body Diode Characteristics I T = 25 C Continuous Source-Drain Diode Current 60 S C A a I 100 Pulse Diode Forward Current SM Body Diode Voltage V I = 5 A 0.74 1.1 V SD S t Body Diode Reverse Recovery Time 63 120 ns rr Body Diode Reverse Recovery Charge Q 82 160 nC rr I = 20 A, dI/dt = 100 A/s, T = 25 C F J t Reverse Recovery Fall Time 27 a ns t Reverse Recovery Rise Time 36 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. For technical questions, contact: pmostechsupport vishay.com www.vishay.com Document Number: 67197 2 S12-2120-Rev. B, 03-Sep-12 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000