New Product SiR862DP Vishay Siliconix N-Channel 25-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 a, e V (V) R () Q (Typ.) I (A) Definition DS DS(on) g D TrenchFET Power MOSFET 0.0028 at V = 10 V 50 GS 25 28.4 nC 100 % R and UIS Tested g 0.0035 at V = 4.5 V 50 GS Compliant to RoHS Directive 2002/95/EC PowerPAK SO-8 APPLICATIONS DC/DC Conversion - Low-Side Switch S D 6.15 mm 5.15 mm Notebook 1 S 2 Server S 3 Game Console G 4 D 8 G D 7 D 6 D 5 S Bottom View Ordering Information: SiR862DP-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol Limit Unit V Drain-Source Voltage 25 DS V Gate-Source Voltage V 20 GS e T = 25 C C 50 e T = 70 C C 50 Continuous Drain Current (T = 150 C) I J D b, c T = 25 C A 32 b, c T = 70 C A 22.8 A I Pulsed Drain Current 70 DM e T = 25 C 50 C I Continuous Source-Drain Diode Current S b, c T = 25 C A 4.7 I Single Pulse Avalanche Current 40 AS L = 0.1 mH Avalanche Energy E mJ 80 AS T = 25 C 69 C T = 70 C 44.4 C P Maximum Power Dissipation W D b, c T = 25 C A 5.2 b, c T = 70 C A 3.3 T , T Operating Junction and Storage Temperature Range - 55 to 150 J stg C f, g 260 Soldering Recommendations (Peak Temperature) THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b, d t 10 s R 19 24 Maximum Junction-to-Ambient thJA C/W R Maximum Junction-to-Case (Drain) Steady State 1.2 1.8 thJC Notes: a. Based on T = 25 C. C b. Surface mounted on 1 x 1 FR4 board. c. t = 10 s. d. Maximum under steady state conditions is 65 C/W. e. Package limited. f. See solder profile (www.vishay.com/ppg 73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. g. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. Document Number: 65672 www.vishay.com S10-0041-Rev. A, 11-Jan-10 1New Product SiR862DP Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min. Typ.Max.Unit Static V V = 0 V, I = 250 A Drain-Source Breakdown Voltage 25 V DS GS D V Temperature Coefficient V /T 25 DS DS J I = 250 A mV/C D V Temperature Coefficient V /T - 5.8 GS(th) GS(th) J V = V , I = 250 A Gate-Source Threshold Voltage V 1.2 2.3 V GS(th) DS GS D I V = 0 V, V = 20 V Gate-Source Leakage 100 nA GSS DS GS V = 25 V, V = 0 V 1 DS GS I Zero Gate Voltage Drain Current A DSS V = 25 V, V = 0 V, T = 55 C 10 DS GS J a I V 5 V, V = 10 V 30 A On-State Drain Current D(on) DS GS V = 10 V, I = 15 A 0.0023 0.0028 GS D a R Drain-Source On-State Resistance DS(on) V = 4.5 V, I = 10 A 0.0028 0.0035 GS D a g V = 10 V, I = 15 A 80 S Forward Transconductance fs DS D b Dynamic Input Capacitance C 3800 iss C V = 10 V, V = 0 V, f = 1 MHz Output Capacitance 890 pF oss DS GS Reverse Transfer Capacitance C 344 rss V = 10 V, V = 10 V, I = 10 A 60 90 DS GS D Q Total Gate Charge g 28.4 43 nC Gate-Source Charge Q V = 15 V, V = 4.5 V, I = 10 A 9.3 gs DS GS D Q Gate-Drain Charge 7.0 gd Gate Resistance R f = 1 MHz 0.2 1.1 2.2 g t Turn-On Delay Time 28 55 d(on) Rise Time t 16 30 r V = 10 V, R = 10 DD L I 10 A, V = 4.5 V, R = 1 t Turn-Off Delay Time D GEN g 39 75 d(off) t Fall Time 17 34 f ns t Turn-On Delay Time 12 24 d(on) t Rise Time V = 10 V, R = 10 918 r DD L I 10 A, V = 10 V, R = 1 t Turn-Off Delay Time D GEN g 33 65 d(off) t Fall Time 918 f Drain-Source Body Diode Characteristics I T = 25 C Continuous Source-Drain Diode Current 50 S C A a I 70 Pulse Diode Forward Current SM Body Diode Voltage V I = 5 A 0.72 1.1 V SD S t Body Diode Reverse Recovery Time 31 60 ns rr Q Body Diode Reverse Recovery Charge 22 42 nC rr I = 10 A, dI/dt = 100 A/s, T = 25 C F J t Reverse Recovery Fall Time 15 a ns t Reverse Recovery Rise Time 16 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 65672 2 S10-0041-Rev. A, 11-Jan-10