Product Information

SIR878BDP-T1-RE3

SIR878BDP-T1-RE3 electronic component of Vishay

Datasheet
MOSFET 100V Vds 20V Vgs PowerPAK SO-8

Manufacturer: Vishay
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

3000: USD 0.8242 ea
Line Total: USD 2472.6

2910 - Global Stock
Ships to you between
Tue. 21 May to Mon. 27 May
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
2910 - WHS 1


Ships to you between Tue. 21 May to Mon. 27 May

MOQ : 3000
Multiples : 3000
3000 : USD 0.8504

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Series
Transistor Type
Brand
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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6.15 mm SiR878BDP www.vishay.com Vishay Siliconix N-Channel 100 V (D-S) MOSFET FEATURES PowerPAK SO-8 Single D TrenchFET Gen IV power MOSFET D 8 D 7 Tuned for the lowest R - Q FOM DS oss D 6 5 100 % R and UIS tested g Material categorization: for definitions of compliance please see 1 www.vishay.com/doc 99912 2 S 3 S APPLICATIONS 4 S D 1 G Synchronous rectification Top View Bottom View Primary side switch PRODUCT SUMMARY DC/DC converters V (V) 100 DS G Power supplies R max. ( ) at V = 10 V 0.0144 DS(on) GS R max. ( ) at V = 7.5 V 0.0170 Motor drive control DS(on) GS Q typ. (nC) 18.9 g S I (A) 42.5 D N-Channel MOSFET Configuration Single ORDERING INFORMATION Package PowerPAK SO-8 Lead (Pb)-free and halogen-free SiR878BDP-T1-RE3 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A PARAMETER SYMBOL LIMIT UNIT Drain-source voltage V 100 DS V Gate-source voltage V 20 GS T = 25 C 42.5 C T = 70 C 34 C Continuous drain current (T = 150 C) I J D b, c T = 25 C 12 A b, c T = 70 C 9.6 A A Pulsed drain current (t = 100 s) I 80 DM T = 25 C 56.8 C Continuous source-drain diode current I S b, c T = 25 C 4.5 A Single pulse avalanche current I 15 AS L = 0.1 mH Single pulse avalanche energy E 11.2 mJ AS T = 25 C 62.5 C T = 70 C 40 C Maximum power dissipation P W D b, c T = 25 C 5 A b, c T = 70 C 3.2 A Operating junction and storage temperature range T , T -55 to +150 J stg C c Soldering recommendations (peak temperature) 260 THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYPICAL MAXIMUM UNIT b Maximum junction-to-ambient t 10 s R 20 25 thJA C/W Maximum junction-to-case (drain) Steady state R 1.6 2 thJC Notes a. Package limited b. Surface mounted on 1 x 1 FR4 board c. t = 10 s d. See solder profile (www.vishay.com/doc 73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components f. Maximum under steady state conditions is 70 C/W g. T = 25 C C S17-1625-Rev. A, 23-Oct-17 Document Number: 75513 1 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 5.15 mm SiR878BDP www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOL TEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-source breakdown voltage V V = 0 V, I = 250 A 100 - - V DS GS D V temperature coefficient V /T I = 10 mA - 81 - DS DS J D mV/C V temperature coefficient V /T I = 250 A - -6.9 - GS(th) GS(th) J D Gate-source threshold voltage V V = V , I = 250 A 2 - 3.4 V GS(th) DS GS D Gate-source leakage I V = 0 V, V = 20 V - - 100 nA GSS DS GS V = 100 V, V = 0 V - - 1 DS GS Zero gate voltage drain current I A DSS V = 100 V, V = 0 V, T = 70 C - - 15 DS GS J a On-state drain current I V 10 V, V =10 V 30 - - A D(on) DS GS V =10 V, I = 15 A - 0.0120 0.0144 GS D a Drain-source on-state resistance R DS(on) V = 7.5 V, I = 10 A - 0.0130 0.0170 GS D a Forward transconductance g V = 15 V, I = 15 A - 46 - S fs DS D b Dynamic Input capacitance C - 1850 - iss Output capacitance C V = 50 V, V = 0 V, f = 1 MHz - 154 - pF oss DS GS Reverse transfer capacitance C -12 - rss V = 50 V, V = 10 V, I = 10 A - 24.8 38 DS GS D Total gate charge Q g - 18.9 29 Gate-source charge Q V = 50 V, V = 7.5 V, I = 10 A -7.4 - nC gs DS GS D Gate-drain charge Q -3.8 - gd Output charge Q V = 50 V, V = 0 V - 19.1 - oss DS GS Gate resistance R f = 1 MHz 0.3 0.85 1.5 g Turn-on delay time t -13 26 d(on) Rise time t -6 12 r V = 50 V, R = 5 , I 10 A, DD L D V = 10 V, R = 1 Turn-off delay time t GEN g -21 42 d(off) Fall time t -6 12 f ns Turn-on delay time t -15 30 d(on) Rise time t -7 14 r V = 50 V, R = 5 , I 10 A, DD L D V = 7.5 V, R = 1 Turn-off delay time t GEN g -19 38 d(off) Fall time t -7 14 f Drain-Source Body Diode Characteristics Continuous source-drain diode current I T = 25 C - - 56.8 S C A Pulse diode forward current I -- 80 SM Body diode voltage V I = 5 A, V = 0 V - 0.77 1.1 V SD S GS Body diode reverse recovery time t -47 94 ns rr Body diode reverse recovery charge Q - 100 200 nC rr I = 10 A, di/dt = 100 A/s, T = 25 C F J Reverse recovery fall time t -38 - a ns Reverse recovery rise time t -11 - b Notes a. Pulse test pulse width 300 s, duty cycle 2 % b. Guaranteed by design, not subject to production testing Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S17-1625-Rev. A, 23-Oct-17 Document Number: 75513 2 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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