SIRA01DP-T1-GE3 Vishay

SIRA01DP-T1-GE3 electronic component of Vishay
SIRA01DP-T1-GE3 Vishay
SIRA01DP-T1-GE3 MOSFETs
SIRA01DP-T1-GE3 Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of SIRA01DP-T1-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SIRA01DP-T1-GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. SIRA01DP-T1-GE3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET N-Ch 150V Vds 16.1nC Qg Typ
Datasheet: SIRA01DP-T1-GE3 Datasheet (PDF)
Price (USD)
1: USD 1.5879 ea
Line Total: USD 1.59 
Availability : 0
  
QtyUnit Price
1$ 1.5879
10$ 1.0807
100$ 0.7453
500$ 0.6271
1000$ 0.5771
3000$ 0.5385
6000$ 0.5385

 SIRA01DP-T1-GE3 More Buying Options & Price Grid(s)
Availability 0
Ship by Mon. 11 Aug to Fri. 15 Aug
MOQ : 6000
Multiples : 1
QtyUnit Price
6000$ 0.5468

Availability 0
Ship by Mon. 11 Aug to Fri. 15 Aug
MOQ : 5
Multiples : 1
QtyUnit Price
5$ 1.3098
50$ 1.0729
100$ 0.8845
500$ 0.6593

Availability 0
Ship by Mon. 18 Aug to Thu. 21 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.6185
10$ 1.3714
30$ 1.2359
100$ 1.0823
500$ 1.0127
1000$ 0.9827

Availability 0
Ship by Thu. 07 Aug to Mon. 11 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.5879
10$ 1.0807
100$ 0.7453
500$ 0.6271
1000$ 0.5771
3000$ 0.5385
6000$ 0.5385

Specifications

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Series
Transistor Type
Brand
Forward Transconductance - Min
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Cnhts
Hts Code
Mxhts
Category
Brand Category
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the SIRA01DP-T1-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SIRA01DP-T1-GE3 and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

The SIRA01DP-T1-GE3 is an n-channel MOSFET manufactured by Vishay. It has a pinch-off voltage of 150V and is rated for 16.1nC of gate-source charge (Qg) and features a Vds of 16.1nC (typical). This MOSFET is capable of delivering currents up to 21.9A, making it well-suited for high-current applications. Its TO-312AA package makes it suitable for surface-mount designs and the low propagation delay and fast switching time characteristics make it an excellent choice for power management and switching applications.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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