X-On Electronics has gained recognition as a prominent supplier of SIRA01DP-T1-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SIRA01DP-T1-GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SIRA01DP-T1-GE3 Vishay

Name: SIRA01DP-T1-GE3
Brand: Vishay
SKU: SIRA01DPT1GE3_Vishay
Availability: OutOfStock
Rating: 5 (11 reviews)

SIRA01DP-T1-GE3 electronic component of Vishay

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Part No.	SIRA01DP-T1-GE3
Manufacturer:	Vishay
Category:	MOSFETs
Description:	MOSFET N-Ch 150V Vds 16.1nC Qg Typ
Datasheet:	SIRA01DP-T1-GE3 Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 1.5375 ea
Line Total: USD 1.54

Availability - 0

MOQ: 1 Multiples: 1
Pack Size: 1

SIRA01DP-T1-GE3 More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 Ship by Fri. 09 May to Thu. 15 May MOQ : 6000 Multiples : 1	6000 : USD 0.5467

0 Ship by Fri. 09 May to Thu. 15 May MOQ : 5 Multiples : 1	5 : USD 1.2682 50 : USD 1.0388 100 : USD 0.8564 500 : USD 0.6384

0 Ship by Fri. 16 May to Wed. 21 May MOQ : 1 Multiples : 1	1 : USD 1.5671 10 : USD 1.3278 30 : USD 1.1966 100 : USD 1.048 500 : USD 0.9805 1000 : USD 0.9515

0 Ship by Wed. 07 May to Fri. 09 May MOQ : 1 Multiples : 1	1 : USD 1.5375 10 : USD 1.0464 100 : USD 0.7216 500 : USD 0.6072 1000 : USD 0.5588 3000 : USD 0.5214 6000 : USD 0.5214

We are delighted to provide the SIRA01DP-T1-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SIRA01DP-T1-GE3 and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

The SIRA01DP-T1-GE3 is an n-channel MOSFET manufactured by Vishay. It has a pinch-off voltage of 150V and is rated for 16.1nC of gate-source charge (Qg) and features a Vds of 16.1nC (typical). This MOSFET is capable of delivering currents up to 21.9A, making it well-suited for high-current applications. Its TO-312AA package makes it suitable for surface-mount designs and the low propagation delay and fast switching time characteristics make it an excellent choice for power management and switching applications.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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TECHNO
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Vishay / BC Components
Vishay / Beyschlag
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Vishay / Draloric
Vishay / Electro-Films
Vishay / Huntington
VISHAY / LITE-ON
Vishay / MCB Industrie
Vishay / Mills
Vishay / Milwaukee
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Vishay / Roederstein
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Vishay / Spectrol
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Vishay / Thin Film
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Vishay BC Components
Vishay Beyschlag
Vishay Beyschlag/Draloric/BC Components
VISHAY CERA-MITE
Vishay Dale
VISHAY DRALORIC
VISHAY ELECTRO-FILMS
VISHAY FOIL RESISTORS
Vishay Foil Resistors (Division of Vishay Precision Group)
VISHAY FOIL RESISTORS / VPG
Vishay General Semiconductor
Vishay Huntington Electric Inc.
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Vishay Micro-Measurements
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Vishay Precision Group
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VISHAY ROEDERSTEIN
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Vishay Semiconductor Diodes Division
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VishayBC Components
VishayBeyschlag
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VishaySemiconductors
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VITRAMON (VISHAY)
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VSC
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Manufacturer Vishay Vishay
Product Category MOSFETs MOSFETs
RoHS - XON Y Y
Id - Continuous Drain Current 36.8 A 36.8 A
Vds - Drain-Source Breakdown Voltage 150 V 150 V
Rds On - Drain-Source Resistance 19.3 mOhms 19.3 mOhms
Transistor Polarity N - Channel N - Channel
Vgs th - Gate-Source Threshold Voltage 2.5 V 2.5 V
Minimum Operating Temperature - 55 C - 55 C
Maximum Operating Temperature + 150 C + 150 C
Pd - Power Dissipation 69.4 W 69.4 W
Mounting Style Smd/Smt Smd/Smt
Package / Case POWERPAK - SO - 8L - 4 POWERPAK - SO - 8L - 4
Packaging Cut Tape Cut Tape
Technology Si Si
Number of Channels 1 Channel 1 Channel
Vgs - Gate-Source Voltage 20 V 20 V
Qg - Gate Charge 31 nC 31 nC
Channel Mode Enhancement Enhancement
Tradename Trenchfet, Powerpak Trenchfet, Powerpak
Configuration Single Single
Series Sij Sij
Transistor Type 1 N - Channel 1 N - Channel
Brand Vishay / Siliconix Vishay / Siliconix
Forward Transconductance - Min 25 S 25 S
Fall Time 8 ns 8 ns
Product Type Mosfet Mosfet
Rise Time 18 ns 18 ns
Factory Pack Quantity : 3000 3000
Subcategory Mosfets Mosfets
Typical Turn-Off Delay Time 15 ns 15 ns
Typical Turn-On Delay Time 8 ns 8 ns
Cnhts 8541290000 8541290000
Hts Code 8541290095 8541290095
Mxhts 85412999 85412999
Category MOSFET MOSFET
Brand Category Vishay Vishay