SIS402DN-T1-GE3 Vishay

SIS402DN-T1-GE3 electronic component of Vishay
SIS402DN-T1-GE3 Vishay
SIS402DN-T1-GE3 MOSFETs
SIS402DN-T1-GE3  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of SIS402DN-T1-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SIS402DN-T1-GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. SIS402DN-T1-GE3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET 30V 35A 5.2W 6.0mohm @ 10V
Datasheet: SIS402DN-T1-GE3 Datasheet (PDF)
Price (USD)
5: USD 0.7086 ea
Line Total: USD 3.54 
Availability : 6198
  
Ship by Fri. 19 Sep to Wed. 24 Sep
QtyUnit Price
5$ 0.7086
50$ 0.4302
150$ 0.3481
500$ 0.2264
3000$ 0.2047
6000$ 0.1917

Availability 6198
Ship by Fri. 19 Sep to Wed. 24 Sep
MOQ : 5
Multiples : 5
QtyUnit Price
5$ 0.7086
50$ 0.4302
150$ 0.3481
500$ 0.2264
3000$ 0.2047
6000$ 0.1917

   
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RoHS - XON
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We are delighted to provide the SIS402DN-T1-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SIS402DN-T1-GE3 and other electronic components in the MOSFETs category and beyond.

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The SIS402DN-T1-GE3 is an integrated power MOSFET produced by Vishay for use in a wide range of applications. It is designed to handle higher power requirements in a small package and can support up to thirty volts and up to thirty-five amps of current. The power dissipation of this MOSFET is five point two watts and the on-resistance is specified at six milliohms when evaluated at ten volts. This MOSFET is offered with a variety of features including gate protection and thermally enhanced packaging for improved performance.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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