SQ2389ES-T1_GE3 Vishay

Name: SQ2389ES-T1_GE3
Brand: Vishay
SKU: SQ2389EST1GE3_Vishay
Availability: InStock
Rating: 5 (11 reviews)

SQ2389ES-T1_GE3 electronic component of Vishay

Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of SQ2389ES-T1_GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SQ2389ES-T1_GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No.	SQ2389ES-T1_GE3
Manufacturer:	Vishay
Category:	MOSFETs
Description:	MOSFET -40V Vds +/-20V Vgs AEC-Q101 Qualified
Datasheet:	SQ2389ES-T1_GE3 Datasheet (PDF)

Price (USD)

1: USD 0.5096 ea
Line Total: USD 0.51

Availability : 9145

Ship by Thu. 25 Sep to Wed. 01 Oct

Qty Unit Price
1 $ 0.5096
10 $ 0.3954
30 $ 0.3464
100 $ 0.2139
600 $ 0.1741
1200 $ 0.1631

SQ2389ES-T1_GE3 More Buying Options & Price Grid(s)

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Availability

Price (USD)

Buy Price

Quantity

Availability 9145

Ship by Thu. 25 Sep to Wed. 01 Oct

MOQ : 1
Multiples : 1

Qty Unit Price
1 $ 0.5096
10 $ 0.3954
30 $ 0.3464
100 $ 0.2139
600 $ 0.1741
1200 $ 0.1631

Availability 1942

Ship by Tue. 23 Sep to Thu. 25 Sep

MOQ : 1
Multiples : 1

Qty Unit Price
1 $ 0.798
45 $ 0.4284
124 $ 0.4046
1000 $ 0.3892

Specifications

Manufacturer

Vishay Vishay

Product Category

MOSFETs MOSFETs

RoHS - XON

Y Y

Id - Continuous Drain Current

4.1 A 4.1 A

Vds - Drain-Source Breakdown Voltage

40 V 40 V

Rds On - Drain-Source Resistance

94 mOhms 94 mOhms

Transistor Polarity

P - Channel P - Channel

Vgs th - Gate-Source Threshold Voltage

1.5 V 1.5 V

Minimum Operating Temperature

- 55 C - 55 C

Maximum Operating Temperature

+ 175 C + 175 C

Pd - Power Dissipation

3 W 3 W

Mounting Style

Smd/Smt Smd/Smt

Package / Case

SOT - 23 - 3 SOT - 23 - 3

Packaging

Cut Tape Cut Tape

Technology

Si Si

Number of Channels

1 Channel 1 Channel

Vgs - Gate-Source Voltage

- 10 V - 10 V

Qg - Gate Charge

8.2 nC 8.2 nC

Channel Mode

Enhancement Enhancement

Qualification

Aec - Q101 Aec - Q101

Tradename

Trenchfet Trenchfet

Configuration

Single Single

Series

Sq Sq

Transistor Type

1 P - Channel 1 P - Channel

Brand

Vishay / Siliconix Vishay / Siliconix

Forward Transconductance - Min

5 S 5 S

Fall Time

4 ns 4 ns

Product Type

Mosfet Mosfet

Rise Time

12 ns 12 ns

Factory Pack Quantity :

3000 3000

Subcategory

Mosfets Mosfets

Typical Turn-Off Delay Time

16 ns 16 ns

Typical Turn-On Delay Time

7 ns 7 ns

Cnhts

8541290000 8541290000

Hts Code

8541290095 8541290095

Mxhts

85412999 85412999

Taric

8541290000 8541290000

Category

MOSFET MOSFET

Brand Category

Vishay Vishay

Notes:- Show Stocked Products With Similar Attributes.

SQ2389ES-T1_GE3 Alternative Parts

We are delighted to provide the SQ2389ES-T1_GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SQ2389ES-T1_GE3 and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

The SQ2389ES-T1_GE3 is a MOSFET manufactured by Vishay. It is designed for use in automotive applications, as it is AEC-Q101 qualified. It has a maximum voltage rating of -40V for the Drain-Source voltage (Vds) and +/-20V for the Gate-Source voltage (Vgs). The MOSFET is suitable for high breakdown voltage applications, and will provide excellent power switching performance.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

BC may also be referenced as

BC COMPONENTS
BC COMPONENTS (VISHAY)
BCC
BEYSCHLAG
DALE
DALE (VISHAY)
DLE
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General Semi
GENERAL SEMI.
GENERAL SEMICONDUCTOR (VISHAY)
GS
HUNTINGTON ELECTRIC
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ROEDERSTEIN
ROEDERSTEIN / VISHAY
SFERNICE (VISHAY)
SFR
SILICONIX
SILICONIX (VISHAY)
SIX
SPD
SPECTROL
SPECTROL ELECTRONICS
SPP
SPRAGUE (VISHAY)
TECHNO
VIR
Vishay BC Components
Vishay Beyschlag
Vishay Cera-Mite
Vishay Dale
Vishay Draloric
Vishay Electro-Films
Vishay Huntington
Vishay Mills
Vishay Milwaukee
Vishay Polytech
Vishay Roederstein
Vishay Sfernice
Vishay Siliconix
Vishay Spectrol
Vishay Sprague
Vishay Tansitor
Vishay Techno
Vishay Thin Film
Vishay Vitramon
Vishay / BC Components
Vishay / Beyschlag
Vishay / Cera-Mite
Vishay / Dale
Vishay / Draloric
Vishay / Electro-Films
Vishay / Huntington
VISHAY / LITE-ON
Vishay / MCB Industrie
Vishay / Mills
Vishay / Milwaukee
Vishay / Polytech
Vishay / Roederstein
Vishay / Sfernice
Vishay / Siliconix
Vishay / Spectrol
Vishay / Sprague
Vishay / Tansitor
Vishay / Techno
Vishay / Thin Film
Vishay / Vitramon
Vishay BC Components
Vishay Beyschlag
Vishay Beyschlag/Draloric/BC Components
VISHAY CERA-MITE
Vishay Dale
VISHAY DRALORIC
VISHAY ELECTRO-FILMS
VISHAY FOIL RESISTORS
Vishay Foil Resistors (Division of Vishay Precision Group)
VISHAY FOIL RESISTORS / VPG
Vishay General Semiconductor
Vishay Huntington Electric Inc.
Vishay Intertech
Vishay Micro-Measurements
VISHAY OPTO
Vishay Precision
Vishay Precision Group
Vishay Precision Group Foil Resistors
VISHAY ROEDERSTEIN
VISHAY SEMICONDUCTOR
Vishay Semiconductor Diodes Division
Vishay Semiconductor Opto Division
Vishay Semiconductors
Vishay Sfernice
Vishay Siliconix
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VISHAY SPECIALTY CAPACITORS
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Qty	Unit Price
1	$ 0.5096
10	$ 0.3954
30	$ 0.3464
100	$ 0.2139
600	$ 0.1741
1200	$ 0.1631

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