IXFL210N30P3 IXYS

IXFL210N30P3 electronic component of IXYS
IXFL210N30P3 IXYS
IXFL210N30P3 MOSFETs
IXFL210N30P3  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of IXFL210N30P3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. IXFL210N30P3 MOSFETs are a product manufactured by IXYS. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. IXFL210N30P3
Manufacturer: IXYS
Category: MOSFETs
Description: MOSFET N-Channel: Power MOSFET w/Fast Diode
Datasheet: IXFL210N30P3 Datasheet (PDF)
Price (USD)
1: USD 17.304 ea
Line Total: USD 17.3 
Availability : 1
  
Ship by Wed. 12 Nov to Fri. 14 Nov
QtyUnit Price
1$ 17.304

Availability 1
Ship by Wed. 12 Nov to Fri. 14 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 17.304

   
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We are delighted to provide the IXFL210N30P3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IXFL210N30P3 and other electronic components in the MOSFETs category and beyond.

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The IXFL210N30P3 is an IGBT (Insulated-Gate Bipolar Transistor) manufactured by IXYS. It is a logic level device with voltage rating of 600V, current rating of 210A, and collector-emitter saturation voltage (Vce(sat)) of 2.5V. The device is housed in a TO-220FP package and has a maximum junction temperature of 175°C. The part is suitable for use in motor control, power conversion, and other power switching applications.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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IXYS
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Ixys Corporation
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IXYS Integrated Circuits
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