SQ3585EV www.vishay.com Vishay Siliconix Automotive N- and P-Channel 20 V (D-S) MOSFET FEATURES TSOP-6 Dual TrenchFET power MOSFET D 2 4 AEC-Q101 qualified S 1 5 100 % R and UIS tested g D 1 6 Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 3 G 2 2 D S S 1 2 2 1 G 1 Top View G 2 PRODUCT SUMMARY G 1 N-CHANNEL P-CHANNEL V (V) 20 -20 DS R ( ) at V = 4.5 V 0.077 0.166 DS(on) GS R ( ) at V = 2.5 V 0.120 0.318 DS(on) GS S D 1 2 I (A) 3.57 -2.5 D Configuration Dual N-Channel MOSFET P-Channel MOSFET Package TSOP-6 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A PARAMETER SYMBOL N-CHANNEL P-CHANNEL UNIT Drain-Source Voltage V 20 -20 DS V Gate-Source Voltage V 12 12 GS T = 25 C 3.57 -2.5 C a Continuous Drain Current (T = 150 C) I J D T = 125 C 2 -1.45 C A Pulsed Drain Current I 12 -10 DM a Continuous Source Current (Diode Conduction) I 2.1 -2.1 S T = 25 C 1.67 1.67 C a Maximum Power Dissipation P W D T = 125 C 0.56 0.56 C Unclamped Inductive Surge UIS I 3.3 3 A AV Operating Junction and Storage Temperature Range T , T -55 to +175 C J stg THERMAL RESISTANCE RATINGS N-CHANNEL P-CHANNEL PARAMETER SYMBOL UNIT MAX. MAX. a Maximum Junction-to-Ambient Steady State R 150 150 C/W thJA Maximum Junction-to-Foot (Drain) Steady State R 90 90 thJF Note a. Surface mounted on 1 x 1 FR4 board. S16-1516-Rev. A, 01-Aug-16 Document Number: 75126 1 For technical questions, contact: automostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000SQ3585EV www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25C, unless otherwise noted) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static V = V , I = 250 A N-Ch 0.6 - 1.5 DS GS D Gate Threshold Voltage V V GS(th) V = V , I = -250 A P-Ch -0.6 - -1.5 DS GS D N-Ch - - 100 Gate-Body Leakage I V = 0 V, V = 12 V nA GSS DS GS P-Ch - - 100 V = 0 V V = 30 V N-Ch - - 1 GS DS V = 0 V V = -30 V P-Ch - - -1 GS DS Zero Gate Voltage Drain Current I A DSS V = 0 V V = 30 V, T = 55 C N-Ch - - 5 GS DS J V = 0 V V = -30 V, T = 55 C P-Ch - - -5 GS DS J V = 4.5 V V 5 V N-Ch 5 - - GS DS a On-State Drain Current I A D(on) V = -4.5 V V -5 V P-Ch -5 - - GS DS V = 4.5 V I = 1 A N-Ch - 0.049 0.077 GS D V = -4.5 V I = -1 A P-Ch - 0.140 0.166 GS D a Drain-Source On-State Resistance R DS(on) V = 2.5 V I = 1 A N-Ch - 0.066 0.120 GS D V = -2.5 V I = -1 A P-Ch - 0.265 0.318 GS D V = 5 V, I = 1 A N-Ch - 10 - DS D a Forward Transconductance g S fs V = -5 V, I = -1 A P-Ch - 3 - DS D I = 1.05 A, V = 0 V N-Ch - 0.80 1.10 S GS a Diode Forward Voltage V V SD I = -1.05 A, V = 0 V P-Ch - -0.83 -1.10 S GS b Dynamic V = 4.5 V V = 10 V, I = 1 A N-Ch - 1.8 2.5 GS DS D Total Gate Charge Q g V = -4.5 V V = -10 V, I = -1 A P-Ch - 2.4 3.5 GS DS D V = 4.5 V V = 10 V, I = 1 A N-Ch - 0.3 - GS DS D Gate-Source Charge Q nC gs V = -4.5 V V = -10 V, I = -1 A P-Ch - 0.4 - GS DS D V = 4.5 V V = 10 V, I = 1 A N-Ch - 0.4 - GS DS D Gate-Drain Charge Q gd V = -4.5 V V = -10 V, I = -1 A P-Ch - 0.7 - GS DS D N-Ch 3.4 - 9.1 Gate Resistance R f = 1 MHz g P-Ch 3.4 - 9.1 N-Ch - 9 12 Turn-On Delay Time t d(on) P-Ch - 7 11 N-Channel N-Ch - 15 19 V = 10 V, R = 10 DD L Rise Time t r I 1 A, V = 10 V, R = 1 k D GEN g P-Ch - 16 22 ns N-Ch - 22 28 P-Channel Turn-Off Delay Time t d(off) V = -10 V, R = 10 P-Ch - 29 40 DD L I -1 A, V = -10 V, R = 1 k D GEN g N-Ch - 8 12 Fall Time t f P-Ch - 14 24 Notes a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S16-1516-Rev. A, 01-Aug-16 Document Number: 75126 2 For technical questions, contact: automostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000