SQD50N04-09H www.vishay.com Vishay Siliconix Automotive N-Channel 40 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) 40 DS Definition R ( ) at V = 10 V 0.009 DS(on) GS TrenchFET Power MOSFET I (A) 50 D Package with Low Thermal Resistance Configuration Single 100 % R and UIS Tested g D d AEC-Q101 Qualified TO-252 Compliant to RoHS Directive 2002/95/EC G Drain Connected to Tab GD S S Top View N-Channel MOSFET ORDERING INFORMATION Package TO-252 Lead (Pb)-free and Halogen-free SQD50N04-09H-GE3 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V 40 DS V Gate-Source Voltage V 20 GS a T = 25 C 50 C Continuous Drain Current I D T = 125 C 40 C a Continuous Source Current (Diode Conduction) I 50 A S b Pulsed Drain Current I 200 DM Single Pulse Avalanche Energy I 39 AS L = 0.1 mH Single Pulse Avalanche Current E 76 mJ AS T = 25 C 83 C b Maximum Power Dissipation P W D T = 125 C 27 C Operating Junction and Storage Temperature Range T , T - 55 to + 175 C J stg THERMAL RESISTANCE RATINGS PARAMETER SYMBOLLIMITUNIT c Junction-to-Ambient PCB Mount R 50 thJA C/W Junction-to-Case (Drain) R 1.8 thJC Notes a. Package limited. b. Pulse test pulse width 300 s, duty cycle 2 %. c. When mounted on 1 square PCB (FR-4 material). d. Parametric verification ongoing. S11-2046-Rev. C, 24-Oct-11 Document Number: 64702 1 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 SQD50N04-09H www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 40 - - DS GS D V Gate-Source Threshold Voltage V V = V , I = 250 A 3.4 3.8 5.0 GS(th) DS GS D Gate-Source Leakage I V = 0 V, V = 20 V - - 100 nA GSS DS GS V = 0 V V = 40 V - - 1.0 GS DS Zero Gate Voltage Drain Current I V = 0 V V = 40 V, T = 125 C - - 50 A DSS GS DS J V = 0 V V = 40 V, T = 175 C - - 250 GS DS J a On-State Drain Current I V = 10 V V 5 V 50 - - A D(on) GS DS V = 10 V I = 20 A - 0.0068 0.0090 GS D a Drain-Source On-State Resistance R V = 10 V I = 20 A, T = 125 C - - 0.015 DS(on) GS D J V = 10 V I = 20 A, T = 125 C - - 0.018 GS D J b Forward Transconductance g V = 15 V, I = 15 A - 48 - S fs DS D b Dynamic Input Capacitance C - 3390 4240 iss Output Capacitance C -V = 0 V V = 25 V, f = 1 MHz408510 pF oss GS DS Reverse Transfer Capacitance C -164205 rss c Total Gate Charge Q -51 76 g c Gate-Source Charge Q -V = 10 V V = 20 V, I = 50 A19.4- nC gs GS DS D c Gate-Drain Charge Q -8.5- gd Gate Resistance R f = 1 MHz 0.65 1.3 2 g c Turn-On Delay Time t -15 23 d(on) c Rise Time t -14 21 r V = 20 V, R = 0.4 DD L ns c I 50 A, V = 10 V, R = 1 Turn-Off Delay Time t -2D GEN g335 d(off) c Fall Time t -812 f b Source-Drain Diode Ratings and Characteristics a Pulsed Current I - - 200 A SM Forward Voltage V I = 30 A, V = 0 V - 0.9 1.5 V SD F GS Notes a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S11-2046-Rev. C, 24-Oct-11 Document Number: 64702 2 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000