SQD50N02-04-GE3 Vishay

SQD50N02-04-GE3 electronic component of Vishay
SQD50N02-04-GE3 Vishay
SQD50N02-04-GE3 MOSFETs
SQD50N02-04-GE3  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of SQD50N02-04-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SQD50N02-04-GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. SQD50N02-04-GE3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET
This MOSFET has a low on-resistance of 0.02 Ohms with an impressive power rating of 50V and 60A.
Datasheet:
Price (USD)
1: USD 3.7573 ea
Line Total: USD 3.76 
Availability : 0
  
QtyUnit Price
1$ 3.7573
10$ 3.1601
25$ 2.5931
100$ 2.2226
250$ 1.9656
500$ 1.8673

Availability 0
Ship by Mon. 11 Aug to Fri. 15 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 3.7573
10$ 3.1601
25$ 2.5931
100$ 2.2226
250$ 1.9656
500$ 1.8673

   
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Product Category
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the SQD50N02-04-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SQD50N02-04-GE3 and other electronic components in the MOSFETs category and beyond.

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The SQD50N02-04-GE3 is a N-channel enhancement-mode MOSFET (Metal Oxide Semiconductor Field Effect Transistor) made by Vishay. It is a low-cost, easy-to-use power switch with a power dissipation of 50 W and a drain-source voltage of 200 V. It has N-channel enhancement-mode which enables it to quickly and accurately switch current on and off when used as a switch or amplifier. This makes it ideal for a wide range of applications such as DC-DC converters, power management, motor control, telecommunication systems, and lighting/industrial systems. Additionally, the SQD50N02-04-GE3 uses a SuperFET™ MOSFET structure to minimize size and reduce voltage drop. This particular device has a drain-source on-resistance rating of 2.4 mO, a gate-source voltage rating of +/- 10 V, and a forward transconductance rating of 118 mS.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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