The SQD50N02-04-GE3 is a N-channel enhancement-mode MOSFET (Metal Oxide Semiconductor Field Effect Transistor) made by Vishay. It is a low-cost, easy-to-use power switch with a power dissipation of 50 W and a drain-source voltage of 200 V. It has N-channel enhancement-mode which enables it to quickly and accurately switch current on and off when used as a switch or amplifier. This makes it ideal for a wide range of applications such as DC-DC converters, power management, motor control, telecommunication systems, and lighting/industrial systems. Additionally, the SQD50N02-04-GE3 uses a SuperFET™ MOSFET structure to minimize size and reduce voltage drop. This particular device has a drain-source on-resistance rating of 2.4 mO, a gate-source voltage rating of +/- 10 V, and a forward transconductance rating of 118 mS.