Product Information

SQJ403BEEP-T1_GE3

SQJ403BEEP-T1_GE3 electronic component of Vishay

Datasheet
MOSFET P Ch -30Vds 20Vgs AEC-Q101 Qualified

Manufacturer: Vishay
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 2.1465 ea
Line Total: USD 2.15

2880 - Global Stock
Ships to you between
Thu. 23 May to Mon. 27 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
6075 - WHS 1


Ships to you between Thu. 23 May to Mon. 27 May

MOQ : 1
Multiples : 1
1 : USD 1.4835
10 : USD 1.2535
100 : USD 1.0086
500 : USD 0.8717
1000 : USD 0.751
3000 : USD 0.7142
6000 : USD 0.682
9000 : USD 0.6647
24000 : USD 0.6636

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Qualification
Tradename
Configuration
Height
Length
Series
Transistor Type
Width
Brand
Forward Transconductance - Min
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Cnhts
Hts Code
Mxhts
Taric
LoadingGif

Notes:- Show Stocked Products With Similar Attributes.
Image Description
SQJ412EP-T1_GE3 electronic component of Vishay SQJ412EP-T1_GE3

MOSFET 40V 32A 83W AEC-Q101 Qualified
Stock : 6000

SQJ418EP-T1_GE3 electronic component of Vishay SQJ418EP-T1_GE3

MOSFET N Ch 100Vds 20Vgs AEC-Q101 Qualified
Stock : 47295

SQJ416EP-T1_GE3 electronic component of Vishay SQJ416EP-T1_GE3

MOSFET N Ch 100Vds 20Vgs AEC-Q101 Qualified
Stock : 7213

SQJ411EP-T1_GE3 electronic component of Vishay SQJ411EP-T1_GE3

MOSFET -12V Vds -60A Id AEC-Q101 Qualified
Stock : 3000

SQJ407EP-T1_GE3 electronic component of Vishay SQJ407EP-T1_GE3

MOSFET -30V Vds PowerPAK AEC-Q101 Qualified
Stock : 0

SQJ409EP-T1_GE3 electronic component of Vishay SQJ409EP-T1_GE3

MOSFET -40V Vds PowerPAK AEC-Q101 Qualified
Stock : 84000

SQJ410EP-T1_GE3 electronic component of Vishay SQJ410EP-T1_GE3

MOSFET N-Channel 30V AEC-Q101 Qualified
Stock : 23440

SQJ403EP-T1_GE3 electronic component of Vishay SQJ403EP-T1_GE3

MOSFET P Ch -30Vds 20Vgs AEC-Q101 Qualified
Stock : 2259

SQJ414EP-T1_GE3 electronic component of Vishay SQJ414EP-T1_GE3

MOSFET Dual N-Ch 30V AEC-Q101 Qualified
Stock : 0

SQJ415EP-T1_GE3 electronic component of Vishay SQJ415EP-T1_GE3

P-Channel 40 V 30A (Tc) 45W (Tc) Surface Mount PowerPAK® SO-8
Stock : 2974

Image Description
SQM100N02-3M5L_GE3 electronic component of Vishay SQM100N02-3M5L_GE3

MOSFET N Ch 20Vds 20Vgs AEC-Q101 Qualified
Stock : 0

CEDM7002AE TR electronic component of Central Semiconductor CEDM7002AE TR

MOSFET 60V N-Ch ESD FET 60Vdg 20Vgs 100mW
Stock : 31540

TSM4806CS RLG electronic component of Taiwan Semiconductor TSM4806CS RLG

MOSFET 20V, 28A, Single N-Channel Power MOSFET
Stock : 2300

SIHA22N60AE-E3 electronic component of Vishay SIHA22N60AE-E3

MOSFET 600V Vds 30V Vgs TO-220 FULLPAK
Stock : 696

TSM9933DCS RLG electronic component of Taiwan Semiconductor TSM9933DCS RLG

MOSFET -20V, -4.7A, Dual P-Channel Power MOSFET
Stock : 0

TSM9926DCS RLG electronic component of Taiwan Semiconductor TSM9926DCS RLG

MOSFET 20V Dual N channel MOSFET
Stock : 419

TSM950N10CW RPG electronic component of Taiwan Semiconductor TSM950N10CW RPG

MOSFET 100v, 6,5A, 95mohm, N channel Power Mosfet
Stock : 4575

TSM900N06CW RPG electronic component of Taiwan Semiconductor TSM900N06CW RPG

MOSFET 60V 11A N Channel Power Mosfet
Stock : 8670

TSM8568CS RLG electronic component of Taiwan Semiconductor TSM8568CS RLG

MOSFET -30V, 13A, Complementary P-Channel Power MOSFET;30V, 15A, Complementary N-Channel Power MOSFET
Stock : 0

TSM80N950CP ROG electronic component of Taiwan Semiconductor TSM80N950CP ROG

MOSFET 800V Power MOSFET Superjunction N-chan
Stock : 5

6.15 mm SQJ403BEEP www.vishay.com Vishay Siliconix Automotive P-Channel 30 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET V (V) -30 DS ESD protection: 3000 V R ( ) at V = -10 V 0.0085 DS(on) GS AEC-Q101 qualified R ( ) at V = -4.5 V 0.0200 DS(on) GS a I (A) -30 100 % R and UIS tested g D Configuration Single Material categorization: Package PowerPAK SO-8L for definitions of compliance please see www.vishay.com/doc 99912 PowerPAK SO-8L Single S D 1 S 2 G 5400 S 3 S 4 1 G P-Channel Top View Bottom View D ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V -30 DS V Gate-Source Voltage V 20 GS T = 25 C -30 C a Continuous Drain Current I D T = 125 C -30 C a Continuous Source Current (Diode conduction) I -30 A S b Pulsed Drain Current I -84 DM Single Pulse Avalanche Current I -6.5 AS L = 10 mH Single Pulse Avalanche Energy E 211 mJ AS T = 25 C 68 C b Maximum Power Dissipation P W D T = 125 C 22 C Operating Junction and Storage Temperature Range T , T -55 to +175 J stg C d, e Soldering Recommendations (Peak temperature) 260 THERMAL RESISTANCE RATINGS PARAMETER SYMBOLLIMITUNIT c Junction-to-Ambient PCB mount R 68 thJA C/W Junction-to-Case (Drain) R 2.2 thJC Notes a. Package limited. b. Pulse test pulse width 300 s, duty cycle 2 %. c. When mounted on 1 square PCB (FR4 material). d. See solder profile (www.vishay.com/doc 73257). The end of the lead terminal of PowerPAK SO-8L is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. S16-1461-Rev. A, 19-Jul-16 Document Number: 67407 1 For technical questions, contact: automostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 5.13 mmSQJ403BEEP www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = -250 A -30 - - DS GS D V Gate-Source Threshold Voltage V V = V , I = -250 A -1.5 -2.0 -2.5 GS(th) DS GS D V = 0 V, V = 12 V - - 2 A DS GS Gate-Source Leakage I GSS V = 0 V, V = 20 V - - 1 mA DS GS V = 0 V V = -30 V - - -1 GS DS Zero Gate Voltage Drain Current I V = 0 V V = -30 V, T = 125 C - - -50 A DSS GS DS J V = 0 V V = -30 V, T = 175 C - - -250 GS DS J a On-State Drain Current I V = -10 V V -5 V -30 - - A D(on) GS DS V = -10 V I = -10 A - 0.0070 0.0085 GS D V = -10 V I = -10 A, T = 125 C - - 0.0130 GS D J a Drain-Source On-State Resistance R DS(on) V = -10 V I = -10 A, T = 175 C - - 0.0150 GS D J V = -4.5 V I = -7 A - 0.0120 0.0200 GS D b Forward Transconductance g V = -10 V, I = -10 A - 32 - S fs DS D b Dynamic Output Capacitance C V = 0 V V = -15 V, f = 1 MHz - 712 890 pF oss GS DS c Total Gate Charge Q -75 164 g c Gate-Source Charge Q -9V = -10 V V = -15 V, I = -10 A.5- nC gs GS DS D c Gate-Drain Charge Q -19- gd Gate Resistance R f = 1 MHz 2 4.3 7.5 k g c Turn-On Delay Time t -38 57 d(on) c Rise Time t -82 123 r V = -15 V, R = 1.5 DD L ns c I -10 A, V = -10 V, R = 1 Turn-Off Delay Time t -D GEN g134201 d(off) c Fall Time t -178214 f b Source-Drain Diode Ratings and Characteristics a Pulsed Current I -- -84 A SM Forward Voltage V I = -3 A, V = 0 V - -0.75 -1.2 V SD F GS Notes a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S16-1461-Rev. A, 19-Jul-16 Document Number: 67407 2 For technical questions, contact: automostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
BC
BC COMPONENTS
BC COMPONENTS (VISHAY)
BCC
BEYSCHLAG
DALE
DALE (VISHAY)
DLE
DRALORIC / VISHAY
General Semi
GENERAL SEMI.
GENERAL SEMICONDUCTOR (VISHAY)
GS
HUNTINGTON ELECTRIC
Micro-Measurements (Division of Vishay Precision Group)
ROEDERSTEIN
ROEDERSTEIN / VISHAY
SFERNICE (VISHAY)
SFR
SILICONIX
SILICONIX (VISHAY)
SIX
SPD
SPECTROL
SPECTROL ELECTRONICS
SPP
SPRAGUE (VISHAY)
TECHNO
VIR
Vishay BC Components
Vishay Beyschlag
Vishay Cera-Mite
Vishay Dale
Vishay Draloric
Vishay Electro-Films
Vishay Huntington
Vishay Mills
Vishay Milwaukee
Vishay Polytech
Vishay Roederstein
Vishay Sfernice
Vishay Siliconix
Vishay Spectrol
Vishay Sprague
Vishay Tansitor
Vishay Techno
Vishay Thin Film
Vishay Vitramon
Vishay / BC Components
Vishay / Beyschlag
Vishay / Cera-Mite
Vishay / Dale
Vishay / Draloric
Vishay / Electro-Films
Vishay / Huntington
VISHAY / LITE-ON
Vishay / MCB Industrie
Vishay / Mills
Vishay / Milwaukee
Vishay / Polytech
Vishay / Roederstein
Vishay / Sfernice
Vishay / Siliconix
Vishay / Spectrol
Vishay / Sprague
Vishay / Tansitor
Vishay / Techno
Vishay / Thin Film
Vishay / Vitramon
Vishay BC Components
Vishay Beyschlag
Vishay Beyschlag/Draloric/BC Components
VISHAY CERA-MITE
Vishay Dale
VISHAY DRALORIC
VISHAY ELECTRO-FILMS
VISHAY FOIL RESISTORS
Vishay Foil Resistors (Division of Vishay Precision Group)
VISHAY FOIL RESISTORS / VPG
Vishay General Semiconductor
Vishay Huntington Electric Inc.
Vishay Intertech
Vishay Micro-Measurements
VISHAY OPTO
Vishay Precision
Vishay Precision Group
Vishay Precision Group Foil Resistors
VISHAY ROEDERSTEIN
VISHAY SEMICONDUCTOR
Vishay Semiconductor Diodes Division
Vishay Semiconductor Opto Division
Vishay Semiconductors
Vishay Sfernice
Vishay Siliconix
VISHAY SMALL SIGNAL
VISHAY SPECIALTY CAPACITORS
Vishay Spectrol
Vishay Sprague
VISHAY TANSITOR
VISHAY TECHNO
Vishay Thin Film
Vishay Vitramon
VISHAY/BC COMPONENTS
Vishay/Beyschlag
Vishay/Dale
Vishay/General Semic
VISHAY/SILICONIX
VishayBC Components
VishayBeyschlag
VishayElectro-Films
VishayGeneral Semiconductor
VishaySemiconductors
VishaySprague
VishayVitramon
VIT
VITRAMON (VISHAY)
VITRAMON/VISHAY
VITROMON
VSC
VSO
VSS

Looking for help? Visit our FAQ's Section to answer to all your questions

 

X-ON Worldwide Electronics

Welcome To X-ON ELECTRONICS
For over three decades, we have been advocating and shaping the electronic components industry. Our management complements our worldwide business scope and focus. We are committed to innovation, backed by a strong business foundation. If you need a trustworthy supplier of electronic components for your business – look no further.
 

Copyright ©2024  X-ON Electronic Services. All rights reserved.
Please ensure you have read and understood our Terms & Conditions before purchasing.
All prices exclude GST.

Image for all the cards that are accepted Image for all the cards that are accepted Image for all the cards that are accepted Image for all the cards that are accepted Image for all the cards that are accepted