6.15 mm6.15 mm SQJ500AEP www.vishay.com Vishay Siliconix Automotive N- and P-Channel 40 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET N-CHANNEL P-CHANNEL d AEC-Q101 Qualified V (V) 40 -40 DS 100 % R and UIS Tested g R ( ) at V = 10 V 0.0092 0.0270 DS(on) GS Material categorization: R ( ) at V = 4.5 V 0.0112 0.0435 DS(on) GS For definitions of compliance please see I (A) 30 -30 D www.vishay.com/doc 99912 Configuration N- and P-Pair PowerPAK SO-8L Dual D S 1 2 D 1 G 2 G 1 D 2 1 S 1 2 G S D 1 1 2 3 S 2 4 N-Channel MOSFET P-Channel MOSFET 11 G 2 Top View Bottom View ORDERING INFORMATION Package PowerPAK SO-8L Lead (Pb)-free and Halogen-free SQJ500AEP-T1-GE3 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLN-CHANNELP-CHANNELUNIT Drain-Source Voltage V 40 -40 DS V Gate-Source Voltage V 20 GS T = 25 C 30 -30 C a Continuous Drain Current I D T = 125 C 30 -18 C a Continuous Source Current (Diode Conduction) I 30 -30 A S b Pulsed Drain Current I 120 -120 DM Single Pulse Avalanche Current I 26.5 -25 AS L = 0.1 mH Single Pulse Avalanche Energy E 35 31 mJ AS T = 25 C 48 48 C b Maximum Power Dissipation P W D T = 125 C 16 16 C Operating Junction and Storage Temperature Range T , T -55 to +175 J stg C e, f 260 Soldering Recommendations (Peak Temperature) THERMAL RESISTANCE RATINGS PARAMETER SYMBOLN-CHANNELP-CHANNELUNIT c Junction-to-Ambient PCB Mount R 85 85 thJA C/W Junction-to-Case (Drain) R 3.1 3.1 thJC Notes a. Package limited. b. Pulse test pulse width 300 s, duty cycle 2 %. c. When mounted on 1 square PCB (FR4 material). d. Parametric verification ongoing. e. See solder profile (www.vishay.com/doc 73257). The PowerPAK SO-8L is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. f. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. S13-2581-Rev. A, 23-Dec-13 Document Number: 62878 1 For technical questions, contact: automostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 55.13 m.13 mmmSQJ500AEP www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOL TEST CONDITIONS MIN.TYP.MAX.UNIT Static V = 0 V, I = 250 A N-Ch 40 - - GS D Drain-Source Breakdown Voltage V DS V = 0 V, I = - 250 A P-Ch -40 - - GS D V V = V , I = 250 A N-Ch 1.3 1.8 2.3 DS GS D Gate-Source Threshold Voltage V GS(th) V = V , I = - 250 A P-Ch -1.5 -2 -2.5 DS GS D N-Ch - - 100 Gate-Source Leakage I V = 0 V, V = 20 V nA GSS DS GS P-Ch - - 100 V = 0 V V = 40 V N-Ch - - 1 GS DS V = 0 V V = -40 V P-Ch - - -1 GS DS V = 0 V V = 40 V, T = 125 C N-Ch - - 50 GS DS J Zero Gate Voltage Drain Current I A DSS V = 0 V V = -40 V, T = 125 C P-Ch - - -50 GS DS J V = 0 V V = 40 V, T = 175 C N-Ch - - 150 GS DS J V = 0 V V = -40 V, T = 175 C P-Ch - - -150 GS DS J V = 10 V V 5 V N-Ch 25 - - GS DS a On-State Drain Current I A D(on) V = -10 V V 5 V P-Ch -25 - - GS DS V = 10 V I = 9.8 A N-Ch - 0.0077 0.0092 GS D V = -10 V I = -6 A P-Ch - 0.0220 0.0270 GS D V = 10 V I = 9.8 A, T = 125 C N-Ch - - 0.0138 GS D J V = -10 V I = -6 A, T = 125 C P-Ch - - 0.0380 GS D J a Drain-Source On-State Resistance R DS(on) V = 10 V I = 9.8 A, T = 175 C N-Ch - - 0.0170 GS D J V = -10 V I = -6 A, T = 175 C P-Ch - - 0.0460 GS D J V = 4.5 V I = 8.9 A N-Ch - 0.0094 0.0112 GS D V = -4.5 V I = -4.7 A P-Ch - 0.0360 0.0435 GS D V = 15 V, I = 9.8 A N-Ch - 65 - DS D b Forward Transconductance g S fs V = -15 V, I = -6 A P-Ch - 16 - DS D b Dynamic V = 0 V V = 20 V, f = 1 MHz N-Ch - 1474 1843 GS DS Input Capacitance C iss V = 0 V V = -20 V, f = 1 MHz P-Ch - 1302 1628 GS DS V = 0 V V = 20 V, f = 1 MHz N-Ch - 218 273 GS DS Output Capacitance C pF oss V = 0 V V = -20 V, f = 1 MHz P-Ch - 222 278 GS DS V = 0 V V = 20 V, f = 1 MHz N-Ch - 89 111 GS DS Reverse Transfer Capacitance C rss V = 0 V V = -20 V, f = 1 MHz P-Ch - 154 193 GS DS V = 10 V V = 20 V, I = 10 A N-Ch - 25.5 38.3 GS DS D c Total Gate Charge Q g V = -10 V V = -20 V, I = -10 A P-Ch - 30.2 45 GS DS D V = 10 V V = 20 V, I = 10 A N-Ch - 4.4 - GS DS D nC c Gate-Source Charge Q gs V = -10 V V = -20 V, I = -10 A P-Ch - 4.1 - GS DS D V = 10 V V = 20 V, I = 10 A N-Ch - 4.3 - GS DS D c Gate-Drain Charge Q gd V = -10 V V = -20 V, I = -10 A P-Ch - 7.4 - GS DS D N-Ch 0.65 1.37 2.1 Gate Resistance R f = 1 MHz g P-Ch 3.1 6.15 9.5 S13-2581-Rev. A, 23-Dec-13 Document Number: 62878 2 For technical questions, contact: automostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000