6.15 mm
SQJA20EP
www.vishay.com
Vishay Siliconix
Automotive N-Channel 200 V (D-S) 175 C MOSFET
FEATURES
PowerPAK SO-8L Single
TrenchFET power MOSFET
AEC-Q101 qualified
100 % R and UIS tested
g
D
Material categorization:
for definitions of compliance please see
1
S
www.vishay.com/doc?99912
2
S
3
D
S
4
1 G
Top View Bottom View
PRODUCT SUMMARY
G
V (V) 200
DS
R ( ) at V = 10 V 0.0500
DS(on) GS
R ( ) at V = 7.5 V 0.0520
DS(on) GS
N-Channel MOSFET
I (A) 22.5
D
S
Configuration Single
Package PowerPAK SO-8L
ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted)
C
PARAMETER SYMBOL LIMIT UNIT
Drain-source voltage V 200
DS
V
Gate-source voltage V 20
GS
T = 25 C 22.5
C
Continuous drain current I
D
T = 125 C 13
C
Continuous source current (diode conduction) I 60 A
S
a
Pulsed drain current I 82
DM
Single pulse avalanche current I 18
AS
L = 0.1 mH
Single pulse avalanche energy E 16 mJ
AS
T = 25 C 68
C
a
Maximum power dissipation P W
D
T = 125 C 22
C
Operating junction and storage temperature range T , T -55 to +175
J stg
C
c, d
Soldering recommendations (peak temperature) 260
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL LIMIT UNIT
b
Junction-to-ambient PCB mount R 68
thJA
C/W
Junction-to-case (drain) R 2.2
thJC
Notes
a. Pulse test; pulse width 300 s, duty cycle 2 %
b. When mounted on 1" square PCB (FR4 material)
c. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8L is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection
d. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components
S17-1298-Rev. A, 21-Aug-17 Document Number: 75420
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
5.13 mm
SQJA20EP
www.vishay.com
Vishay Siliconix
SPECIFICATIONS (T = 25 C, unless otherwise noted)
C
PARAMETER SYMBOL TEST CONDITIONS MIN.TYP.MAX.UNIT
Static
Drain-source breakdown voltage V V = 0, I = 250 A 200 - -
DS GS D
V
Gate-source threshold voltage V V = V , I = 250 A 2.5 3.0 3.5
GS(th) DS GS D
Gate-source leakage I V = 0 V, V = 20 V - - 100 nA
GSS DS GS
V = 0 V V = 200 V - - 1
GS DS
Zero gate voltage drain current I V = 0 V V = 200 V, T = 125 C - - 50 A
DSS GS DS J
V = 0 V V = 200 V, T = 175 C - - 200
GS DS J
a
On-state drain current I V = 10 V V 5 V 10 - - A
D(on) GS DS
V = 10 V I = 10 A - 0.0410 0.0500
GS D
V = 7.5 V I = 8 A - 0.0426 0.0520
GS D
a
Drain-source on-state resistance R
DS(on)
V = 10 V I = 10 A, T = 125 C - - 0.1020
GS D J
V = 10 V I = 10 A, T = 175 C - - 0.1350
GS D J
b
Forward transconductance g V = 15 V, I = 10 A - 19 - S
fs DS D
b
Dynamic
Input capacitance C - 955 1300
iss
Output capacitance C V = 0 V V = 25 V, f = 1 MHz - 456 650 pF
oss GS DS
Reverse transfer capacitance C -38 55
rss
V = 10 V V = 100 V, I = 5 A - 17.6 27
GS DS D
c
Total gate charge Q
g
-14.1 22
nC
c
Gate-source charge Q V = 7.5 V V = 100 V, I = 5 A -4.1 -
gs GS DS D
c
Gate-drain charge Q -5.3 -
gd
Gate resistance R f = 1 MHz 0.55 1.18 1.80
g
c
Turn-on delay time t -14 25
d(on)
c
Rise time t -4 10
r V = 100 V, R = 20
DD L
ns
c
I 5 A, V = 10 V, R = 1
Turn-off delay time t D GEN g -27 45
d(off)
c
Fall time t -12 20
f
b
Source-Drain Diode Ratings and Characteristics
a
Pulsed current I -- 82 A
SM
Forward voltage V I = 10 A, V = 0 - 0.81 1.2 V
SD F GS
Body diode reverse recovery time t - 88 180 ns
rr
Body diode reverse recovery charge Q - 301 600 nC
rr
I = 5 A, di/dt = 100 A/s
F
Reverse recovery fall time t -69 -
a
ns
Reverse recovery rise time t -19 -
b
Body diode peak reverse recovery current I --6.7 - A
RM(REC)
Notes
a. Pulse test; pulse width 300 s, duty cycle 2 %
b. Guaranteed by design, not subject to production testing
c. Independent of operating temperature
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S17-1298-Rev. A, 21-Aug-17 Document Number: 75420
2
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000