333 3 SS10P5, SS10P6 www.vishay.com Vishay General Semiconductor High Current Density Surface-Mount Schottky Barrier Rectifier FEATURES eSMP Series Available Very low profile - typical height of 1.1 mm Ideal for automated placement K Guardring for overvoltage protection Low forward voltage drop, low power losses 1 High efficiency 2 Low thermal resistance Meet MSL level 1, per J-STD-020, LF maximum peak SMPC (TO-277A) of 260 C AEC-Q101 qualified available K Anode 1 - Automotive ordering code: base P/NHM3 Anode 2 Cathode Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 LINKS TO ADDITIONAL RESOURCES TYPICAL APPLICATIONS For use in low voltage high frequency inverters, freewheeling 3D Models diodes, DC/DC converters, and polarity protection application. PRIMARY CHARACTERISTICS MECHANICAL DATA I 10 A F(AV) Case: SMPC (TO-277A) V 50 V, 60 V RRM Molding compound meets UL 94 V-0 flammability rating I 280 A FSM Base P/N-M3 - halogen-free, RoHS-compliant, and E 20 mJ AS commercial grade V at I = 10 A 0.55 V F F Base P/NHM3 X - halogen-free, RoHS-compliant and T max. 150 C AEC-Q101 qualified J ( X denotes revision code e.g. A, B,.....) Package SMPC (TO-277A) Circuit configuration Single Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 2 whisker test, HM3 suffix meets JESD 201 class 2 whisker test MAXIMUM RATINGS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL SS10P5 SS10P6 UNIT Device marking code S105 S106 Maximum repetitive peak reverse voltage V 50 60 V RRM (1) 10 Maximum average forward rectified current (fig. 1) I A F(AV) (2) 7 Peak forward surge current 10 ms single half sine-wave superimposed I 280 A FSM on rated load Non-repetitive avalanche energy at I = 2 A, T = 25 C E 20 mJ AS J AS Operating junction and storage temperature range T , T -55 to +150 C J STG Notes (1) Units mounted on infinite heatsink (2) Units mounted on 5 cm x 5 cm, 2 oz. copper pad Revision: 24-Apr-2020 Document Number: 89043 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 DDD D SS10P5, SS10P6 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT I = 5 A 0.51 - F I = 7 A T = 25 C 0.55 - F A I = 10 A 0.59 0.67 V F (1) Instantaneous forward voltage V F = 5 A I 0.42 - F I = 7 A T = 125 C 0.47 - F A I = 10A 0.55 0.63 F T = 25 C 7.8 150 A A (2) Reverse current Rated V I R R T = 125 C 5.9 15 mA A Typical junction capacitance 4.0 V, 1 MHz C 560 - pF J Notes (1) Pulse test: 300 s pulse width, 1 % duty cycle (2) Pulse test: Pulse width 40 ms THERMAL CHARACTERISTICS (T = 25 C unless otherwise specified) A PARAMETER SYMBOL SS10P5 SS10P6 UNIT (1) R 60 JA Typical thermal resistance per diode C/W R 3 JL Note (1) Units mounted on recommended PCB 1 oz. pad layout ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE SS10P6-M3/86A 0.10 86A 1500 7 diameter plastic tape and reel SS10P6-M3/87A 0.10 87A 6500 13 diameter plastic tape and reel (1) SS10P6HM3 A/H 0.10 H 1500 7 diameter plastic tape and reel (1) SS10P6HM3 A/I 0.10 I 6500 13 diameter plastic tape and reel Note (1) AEC-Q101 qualified Revision: 24-Apr-2020 Document Number: 89043 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000