33 3 SS22S, SS23S, SS24S www.vishay.com Vishay General Semiconductor Surface Mount Schottky Barrier Rectifier FEATURES Low profile package Ideal for automated placement Low forward voltage drop, low power losses High efficiency High surge capability Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C AEC-Q101 qualified SMA (DO-214AC) Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 TYPICAL APPLICATIONS DESIGN SUPPORT TOOLS AVAILABLE For use in low voltage, high frequency inverters, freewheeling, DC/DC converters, and polarity protection applications. 3D Models MECHANICAL DATA PRIMARY CHARACTERISTICS Case: DO-214AC (SMA) Molding compound meets UL 94 V-0 flammability rating I 2.0 A F(AV) Base P/N-E3 - RoHS-compliant, commercial grad e V 20 V, 30 V, 40 V RRM Base P/NHE3 X - RoHS-compliant and AEC-Q101 qualified I 40 A FSM ( X denotes revision code e.g. A, B, .....) V at I = 2.0 A 0.517 V F F Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 T max. 150 C J E3 suffix meets JESD 201 class 2 whisker test, HE3 suffix Package SMA (DO-214AC) meets JESD 201 class 2 whisker test Circuit configurations Single Polarity: color band denotes the cathode end MAXIMUM RATINGS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL SS22S SS23S SS24S UNIT Device marking code 22S 23S 24S Maximum repetitive peak reverse voltage V 20 30 40 V RRM Maximum average forward rectified current (fig. 1) I 2.0 A F(AV) Peak forward surge current 10 ms single half sine-wave I 40 A FSM superimposed on rated load Voltage rate of change (rated V ) dV/dt 10 000 V/s R Operating junction and storage temperature range T T -55 to +150 C J, STG Revision: 14-May-2019 Document Number: 89008 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 DD D SS22S, SS23S, SS24S www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT I = 1 A 0.436 - F (1) Instantaneous forward voltage T = 25 C V V J F I = 2 A 0.517 0.55 F T = 25 C 13 200 A J (2) Reverse current Rated V I R R T = 100 C 1.65 8 mA J Typical junction capacitance 4.0 V, 1 MHz C 130 - pF J Notes (1) Pulse test: 300 s pulse width, 1 % duty cycle (2) Pulse test: Pulse width 40 ms THERMAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL SS22S SS23S SS24S UNIT (1) R 75 JA Typical thermal resistance C/W (1) R 25 JL Note (1) PCB mounted with 0.4 x 0.4 (10 mm x 10 mm) copper pad areas ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE SS24S-E3/61T 0.064 61T 1800 7 diameter plastic tape and reel SS24S-E3/5AT 0.064 5AT 7500 13 diameter plastic tape and reel (1) SS24SHE3 B/H 0.064 H 1800 7 diameter plastic tape and reel (1) SS24SHE3 B/I 0.064 I 7500 13 diameter plastic tape and reel Note (1) AEC-Q101 qualified Revision: 14-May-2019 Document Number: 89008 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000