333 3 SSA33L, SSA34 www.vishay.com Vishay General Semiconductor High Current Density Surface-Mount Schottky Rectifier FEATURES Available Low profile package Ideal for automated placement Guardring for overvoltage protection Low power losses, high efficiency Low forward voltage drop High surge capability SMA (DO-214AC) Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C AEC-Q101 qualified available Cathode Anode Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 LINKS TO ADDITIONAL RESOURCES TYPICAL APPLICATIONS For use in low voltage high frequency inverters, 3D Models freewheeling, DC/DC converters, and polarity protection applications. PRIMARY CHARACTERISTICS MECHANICAL DATA I 3.0 A F(AV) Case: SMA (DO-214AC)) V 30 V, 40 V RRM Molding compound meets UL 94 V-0 flammability rating I 75 A FSM Base P/N-E3 - RoHS-compliant, commercial grad e V 0.38 V, 0.42 V F Base P/NHE3 X - RoHS-compliant and AEC-Q101 qualified T max. 150 C ( X denotes revision code e.g. A, B, .....) J Package SMA (DO-214AC) Terminals: matte tin plated leads, solderable per Circuit configuration Single J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 2 whisker test, HE3 suffix meets JESD 201 class 2 whisker test Polarity: color band denotes cathode end MAXIMUM RATINGS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL SSA33L SSA34 UNIT Device marking code 33L S34 V Maximum repetitive peak reverse voltage V 30 40 V RRM Maximum RMS voltage V 21 28 V RMS Maximum DC blocking voltage V 30 40 V DC Maximum average forward rectified current at T (fig. 1) I 3.0 A L F(AV) Peak forward surge current 8.3 ms single half sine-wave I 75 A FSM superimposed on rated load Voltage rate of change (rated V ) dV/dt 10 000 V/s R Operating junction temperature range T -65 to +150 C J Storage temperature range T -65 to +150 C STG Revision: 23-Apr-2020 Document Number: 88883 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, Diodes-Europe vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 DDD D SSA33L, SSA34 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A SSA33L SSA34 PARAMETER TEST CONDITIONS SYMBOL UNIT TYP. MAX. TYP. MAX. T = 25 C 0.43 0.45 0.46 0.49 J (1) Maximum instantaneous forward voltage 3.0 A V V F T = 125 C 0.34 0.38 0.38 0.42 J T = 25 C -0.5 -0.2 J (2) Maximum reverse current at rated V I mA R R T = 125 C 20 35 17 30 J Notes (1) Pulse test: 300 s pulse width, 1 % duty cycle (2) Pulse test: Pulse width 40 ms THERMAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL SSA33L SSA34 UNIT R 110 JA (1) Typical thermal resistance C/W R 28 JL Note (1) Aluminum substrate mounted ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE SSA33L-E3/61T 0.064 61T 1800 7 diameter plastic tape and reel SSA33L-E3/5AT 0.064 5AT 7500 13 diameter plastic tape and reel (1) SSA33LHE3 A/H 0.064 H 1800 7 diameter plastic tape and reel (1) SSA33LHE3 A/I 0.064 I 7500 13 diameter plastic tape and reel Note (1) AEC-Q101 qualified Revision: 23-Apr-2020 Document Number: 88883 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, Diodes-Europe vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000