SUD19P06-60 Vishay Siliconix P-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 d V (V) R ( ) Q (Typ) I (A) DS DS(on) g D Definition 0.060 at V = - 10 V - 19 GS TrenchFET Power MOSFET - 60 26 0.077 at V = - 4.5 V - 16.8 GS 100 % UIS Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS High Side Switch for Full Bridge Converter DC/DC Converter for LCD Display TO-252 S G Drain Connected to Tab GD S Top View D Ordering Information: SUD19P06-60-E3 (Lead (Pb)-free) P-Channel MOSFET SUD19P06-60-GE3 (Lead (Pb)-free and Halogen free) ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise note) A Parameter Symbol Limit Unit V Drain-Source Voltage - 60 DS V Gate-Source Voltage V 20 GS T = 25 C - 18.3 C Continuous Drain Current (T = 150 C) I J D T = 125 C - 8.19 C A I Pulsed Drain Current - 30 DM Avalanche Current, Single Pulse I - 22 AS L = 0.1 mH a E 24.2 mJ Repetitive Avalanche Energy, Single Pulse AS c T = 25 C 38.5 C Power Dissipation P W D b, c T = 25 C 2.3 A T , T Operating Junction and Storage Temperature Range - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit t 10 s 17 21 b R Maximum Junction-to-Ambient thJA Steady State 45 55 C/W R Maximum Junction-to-Case 2.7 3.25 thJC Notes: a. Duty cycle 1 %. b. When mounted on 1 square PCB (FR-4 material). c. See SOA curve for voltage derating. d. Based up on T = 25 C. C Document Number: 69253 www.vishay.com S11-2132 Rev. B, 31-Oct-11 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000SUD19P06-60 Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise note) J Parameter Symbol Test Conditions Min . Typ. Max. Unit Static V V = 0 V, I = - 250 A Drain-Source Breakdown Voltage - 60 V DS GS D V V = V , I = - 250 A Gate Threshold Voltage - 1 - 3 V GS(th) DS GS D I V = 0 V, V = 20 V Gate-Body Leakage 100 nA GSS DS GS V = - 60 V, V = 0 V - 1 DS GS I V = - 60 V, V = 0 V, T = 125 C Zero Gate Voltage Drain Current - 50 A DSS DS GS J V = - 60 V, V = 0 V, T = 150 C - 125 DS GS J a I V - 5 V, V = - 10 V On-State Drain Current - 30 A D(on) DS GS V = - 10 V, I = - 10 A 0.048 0.060 GS D V = - 10 V, I = - 10 A, T = 125 C 0.102 GS D J a R Drain-Source On-State Resistance DS(on) V = - 10 V, I = - 10 A, T = 150 C 0.120 GS D J V = - 4.5 V, I = - 5 A 0.061 0.077 GS D a g V = - 15 V, I = - 10 A 22 S Forward Transconductance fs DS D b Dynamic C Input Capacitance 1140 1710 iss Output Capacitance C V = 0 V, V = - 25 V, f = 1 MHz 130 pF oss GS DS C Reverse Transfer Capacitance 90 rss c Q 26 40 Total Gate Charge g c Q V = - 30 V, V = - 10 V, I = - 10 A 4.5 nC Gate-Source Charge gs DS GS D c Q 7 Gate-Drain Charge gd R Gate Resistance f = 1 MHz 7 g c t Turn-On Delay Time 815 d(on) c t 915 Rise Time r V = - 30 V, R = 3 DD L ns c I - 19 A, V = - 10 V, R = 2.5 t D GEN g 65 100 Turn-Off Delay Time d(off) c t 30 45 Fall Time f b Drain-Source Body Diode and Characteristics (T = 25 C) C I Continuous Current - 30 S A Pulsed Current I - 30 SM a V I = - 19 A, V = 0 V - 1 - 1.5 V Forward Voltage SD F GS Reverse Recovery Time t I = - 19 A, di/dt = 100 A/s 41 61 ns rr F Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 69253 2 S11-2132 Rev. B, 31-Oct-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000