SUD40151EL www.vishay.com Vishay Siliconix P-Channel 40 V (D-S) 175 C MOSFET FEATURES TO-252TO TrenchFET Gen IV p-channel power MOSFET Maximum 175 C junction temperature Drain connected to tab and UIS tested 100 % R g Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 S APPLICATIONS S D Motor drive control G Top View LED backlighting Load switch G PRODUCT SUMMARY Industrial V (V) -40 DS R max. ( ) at V = 10 V 0.0120 DS(on) GS R max. ( ) at V = 4.5 V 0.0175 DS(on) GS D Q typ. (nC) 74.3 g P-Channel MOSFET d I (A) -42 D Configuration Single ORDERING INFORMATION Package TO-252 Lead (Pb)-free and halogen-free SUD40151EL-GE3 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A PARAMETER SYMBOL LIMIT UNIT Drain-source voltage V -40 DS V Gate-source voltage V 20 GS d T = 25 C -42 C Continuous drain current I D T = 125 C -28.6 C Pulsed drain current (t = 100 s) I -100 A DM Continuous source-drain diode current I -41.7 S a Single pulse avalanche current I -25 AS L = 0.1 mH a Single pulse avalanche energy E 31.25 mJ AS b T = 25 C 50 C Maximum power dissipation P W D b T = 125 C 16.7 C Operating junction and storage temperature range T , T -55 to +175 J stg C c Soldering recommendations (peak temperature) 260 THERMAL RESISTANCE RATINGS PARAMETER SYMBOL MAXIMUM UNIT c Maximum junction-to-ambient (PCB mount) R 60 thJA C/W Maximum junction-to-case (drain) Steady state R 3 thJC Notes a. Duty cycle 1 % b. See SOA curve for voltage derating c. When mounted on 1 square PCB (FR4 material) d. Package limited S18-0676-Rev. B, 02-Jul-2018 Document Number: 75668 1 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000SUD40151EL www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOL TEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-source breakdown voltage V V = 0 V, I = -250 A -40 - - V DS GS D Gate-source threshold voltage V V = V , I = -250 A -1.5 - -2.5 V GS(th) DS GS D Gate-source leakage I V = 0 V, V = 20 V - - 250 nA GSS DS GS V = -40 V, V = 0 V - - -1 DS GS A Zero gate voltage drain current I V = -40 V, V = 0 V, T = 125 C - - -150 DSS DS GS J V = -40 V, V = 0 V, T = 175 C - - -5 mA DS GS J a On-state drain current I V -10 V, V = -10 V -30 - - A D(on) DS GS V = -10 V, I = -17.5 A - 0.0100 0.0120 GS D a Drain-source on-state resistance R DS(on) V = -4.5 V, I = -14.5 A - 0.0135 0.0175 GS D a Forward transconductance g V = -10 V, I = -17.5 A - 70 - S fs DS D b Dynamic Input capacitance C - 5340 - iss Output capacitance C V = -20 V, V = 0 V, f = 1 MHz - 335 - pF oss DS GS Reverse transfer capacitance C - 303 - rss Total gate charge Q - 74.3 112 g Gate-source charge Q V = -20 V, V = -10 V, I = -17.5 A - 12.7 - nC gs DS GS D Gate-drain charge Q - 11.1 - gd Gate resistance R f = 1 MHz 0.86 4.3 8.6 g Turn-on delay time t -15 30 d(on) Rise time t -10 20 V = -20 V, R = 1.4 , I -14 A, r DD L D ns V = -10 V, R = 1 Turn-off delay time t GEN g - 75 113 d(off) Fall time t - 75 113 f Drain-Source Body Diode Characteristics Pulse diode forward current (t = 100 s) I -- -42 A SM Body diode voltage V I = -14 A, V = 0 V - -0.85 -1.5 V F GS SD Body diode reverse recovery time t -30 45 ns rr Body diode reverse recovery charge Q - 0.02 0.04 C rr I = -14 A, di/dt = 100 A/s F Reverse recovery fall time t - 15.3 - a ns Reverse recovery rise time t - 14.7 - b Body diode peak reverse recovery charge I -- 2.8 A RM(REC) Notes a. Pulse test pulse width 300 s, duty cycle 2 % b. Guaranteed by design, not subject to production testing c. Independent of operating temperature Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S18-0676-Rev. B, 02-Jul-2018 Document Number: 75668 2 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000