X-On Electronics has gained recognition as a prominent supplier of SUM110P08-11L-E3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SUM110P08-11L-E3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SUM110P08-11L-E3 Vishay

SUM110P08-11L-E3 electronic component of Vishay
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Part No.SUM110P08-11L-E3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET 80V 110A 375W
Low-profile SMD power inductor with an 0805 package and 110 µH inductance.
Datasheet: SUM110P08-11L-E3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 3.826 ea
Line Total: USD 3.83 
Availability - 281
Ship by Fri. 15 Nov to Wed. 20 Nov
MOQ: 1  Multiples: 1
Pack Size: 1

 SUM110P08-11L-E3 More Buying Options & Price Grid(s)

Availability Price Quantity
679
Ship by Fri. 08 Nov to Thu. 14 Nov
MOQ : 1
Multiples : 1
1 : USD 5.9514
10 : USD 3.9884
25 : USD 3.9481
100 : USD 3.0446
250 : USD 3.0134
500 : USD 2.9146

281
Ship by Fri. 15 Nov to Wed. 20 Nov
MOQ : 1
Multiples : 1
1 : USD 3.826
10 : USD 3.326
30 : USD 2.9711
100 : USD 2.6695
500 : USD 2.5303
800 : USD 2.4674

695
Ship by Fri. 08 Nov to Thu. 14 Nov
MOQ : 1
Multiples : 1
1 : USD 6.748
4 : USD 4.592
11 : USD 4.34

776
Ship by Fri. 08 Nov to Thu. 14 Nov
MOQ : 800
Multiples : 800
800 : USD 5.4233

679
Ship by Fri. 08 Nov to Thu. 14 Nov
MOQ : 3
Multiples : 1
3 : USD 5.9722
10 : USD 4.1977
25 : USD 4.1561
100 : USD 3.1252
250 : USD 3.094
500 : USD 2.9146

3880
Ship by Fri. 08 Nov to Thu. 14 Nov
MOQ : 800
Multiples : 800
800 : USD 5.4613

Specifications

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Series
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Height
Length
Transistor Type
Width
Forward Transconductance - Min
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the SUM110P08-11L-E3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SUM110P08-11L-E3 and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

The SUM110P08-11L-E3 is a P-channel power metal-oxide-semiconductor field-effect transistor (MOSFET) produced by Vishay. It is designed for use with load switch applications in low-side configuration, as well as power management designs. This particular device has a maximum drain-source voltage of 110V, a maximum drain-source on-state resistance of 11 mO, and a maximum continuous drain current of 8A. The device is offered in a SOT-23 (TO-236) E3 package which has 3 leads.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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