SUP75N03-04-E3 Vishay

SUP75N03-04-E3 electronic component of Vishay

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X-On Electronics has gained recognition as a prominent supplier of SUP75N03-04-E3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SUP75N03-04-E3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No.	SUP75N03-04-E3
Manufacturer:	Vishay
Category:	MOSFETs
Description:	MOSFET 30V 75A 187W Small dual N-channel MOSFET with low-on-resistance, fast switching, and high input impedance.
Datasheet:	SUP75N03-04-E3 Datasheet (PDF)

Price (USD)

50: USD 2.0592 ea
Line Total: USD 102.96

Availability : 0

Qty	Unit Price
50	$ 2.0592

SUP75N03-04-E3 More Buying Options & Price Grid(s)

Availability

Price (USD)

Quantity

Availability 0

Ship by Mon. 11 Aug to Fri. 15 Aug

MOQ : 50
Multiples : 50

Qty	Unit Price
50	$ 2.0592

We are delighted to provide the SUP75N03-04-E3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SUP75N03-04-E3 and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

The SUP75N03-04-E3 is a N-Channel Logic Level MOSFET transistor from Vishay. It is made from 75 V rated silicon material and is designed for low-level switching operations. It has an RDS(ON) of 4.9 mO, an ID of 75A, and a VGS of 4V. This transistor has a combined maximum power dissipation of 4 W, and a dual source terminal with an isolated tab. It is also RoHS-compliant and suitable for use in various automotive, industrial and consumer applications.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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Manufacturer Vishay Vishay
Product Category MOSFETs MOSFETs
RoHS - XON e e
Id - Continuous Drain Current 75 A 75 A
Vds - Drain-Source Breakdown Voltage 30 V 30 V
Rds On - Drain-Source Resistance 7 mOhms 7 mOhms
Transistor Polarity n - channel n - channel
Vgs - Gate-Source Breakdown Voltage 20 V 20 V
Minimum Operating Temperature - 55 C - 55 C
Maximum Operating Temperature + 175 C + 175 C
Pd - Power Dissipation 187 W 187 W
Mounting Style through hole through hole
Package / Case TO - 220 - 3 TO - 220 - 3
Packaging Tube Tube
Channel Mode enhancement enhancement
Tradename trenchfet trenchfet
Configuration single single
Brand Vishay / Siliconix Vishay / Siliconix
Fall Time 95 ns 95 ns
Rise Time 40 ns 40 ns
Factory Pack Quantity : 50 50
Typical Turn-Off Delay Time 190 ns 190 ns