SUP85N10-10, SUB85N10-10 Vishay Siliconix N-Channel 100-V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET V (V) R ( )I (A) DS DS(on) D 175 C Maximum Junction Temperature 0.0105 at V = 10 V GS a Compliant to RoHS Directive 2002/95/EC 100 85 0.012 at V = 4.5 V GS TO-220AB D TO-263 G DRAIN connected to TAB G D S Top View S GD S SUB85N10-10 Top View N-Channel MOSFET SUP85N10-10 ORDERING INFORMATION Package Lead (Pb)-free TO-220AB SUP85N10-10-E3 TO-263 SUB85N10-10-E3 ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol Limit Unit V Drain-Source Voltage 100 DS V V Gate-Source Voltage 20 GS a T = 25 C 85 C Continuous Drain Current (T = 150 C) I D J a T = 125 C 60 C A I Pulsed Drain Current 240 DM I Avalanche Current 75 AS L = 0.1 mH b mJ E Single Pulse Avalanche Energy 280 AS c T = 25 C (TO-220AB and TO-263) 250 C b P W Maximum Power Dissipation D d T = 25 C (TO-263) 3.75 A T , T Operating Junction and Storage Temperature Range - 55 to 175 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol Limit Unit d 40 PCB Mount (TO-263) Junction-to-Ambient R thJA 62.5 C/W Free Air (TO-220AB) R Junction-to-Case thJC 0.6 Notes: a. Package limited. b. Duty cycle 1 %. c. See SOA curve fo voltage derating. d. When mounted on 1 square PCB (FR-4 material). Document Number: 71141 www.vishay.com S10-0107-Rev. E, 18-Jan-10 1SUP85N10-10, SUB85N10-10 Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V V = 0 V, I = 250 A Drain-Source Breakdown Voltage 100 DS GS D V V V = V , I = 250 A Gate-Threshold Voltage 13 GS(th) DS GS D I V = 0 V, V = 20 V Gate-Body Leakage 100 nA GSS DS GS V = 100 V, V = 0 V 1 DS GS I V = 100 V, V = 0 V, T = 125 C Zero Gate Voltage Drain Current 50 A DSS DS GS J V = 100 V, V = 0 V, T = 175 C 250 DS GS J a I V = 5 V, V = 10 V 120 A On-State Drain Current D(on) DS GS V = 10 V, I = 30 A 0.0085 0.0105 GS D V = 4.5 V, I = 20 A 0.010 0.012 GS D a R Drain-Source On-State Resistance DS(on) V = 10 V, I = 30 A, T = 125 C 0.017 GS D J V = 10 V, I = 30 A, T = 175 C 0.022 GS D J a g V = 15 V, I = 30 A 25 S Forward Transconductance fs DS D b Dynamic C Input Capacitance 6550 iss Output Capacitance C V = 0 V, V = 25 V, f = 1 MHz 665 pF oss GS DS Reverse Transfer Capacitance C 265 rss c Q 105 160 Total Gate Charge g c Q V = 50 V, V = 10 V, I = 85 A 17 nC Gate-Source Charge gs DS GS D c Q 23 Gate-Drain Charge gd c t 12 25 Turn-On Delay Time d(on) c t 90 135 Rise Time V = 50 V, R = 0.6 r DD L ns c I 85 A, V = 10 V, R = 2.5 t D GEN g 55 85 Turn-Off DelayTime d(off) c t 130 195 Fall Time f b Source-Drain Diode Ratings and Characteristics T = 25 C C I Continuous Current 85 S A I Pulsed Current 240 SM a V I = 85 A, V = 0 V 1.0 1.5 V Forward Voltage SD F GS t Reverse Recovery Time 85 140 ns rr I I = 50 A, dI/dt = 100 A/s Peak Reverse Recovery Current 4.5 7 A RM(REC) F C Q Reverse Recovery Charge 0.17 0.35 rr Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 71141 2 S10-0107-Rev. E, 18-Jan-10