TCED1100/TCED1100G Vishay Semiconductors Optocoupler, Phototransistor Output, High Gain FEATURES CE Extra low coupling capacity - typical 0.2 pF High common mode rejection Available in single or four channels Rated impulse voltage (transient overvoltage) V = 8 kV peak IOTM Isolation test voltage (partial discharge test voltage) V = 1.6 kV peak pd Rated isolation voltage (RMS includes DC) V DE V = 600 V IOWM RMS C 17199 Rated recurring peak voltage (repetitive) V = 600 V (848 V peak) IORM RMS DESCRIPTION Thickness though insulation 0.75 mm The TCED1100 consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a Creepage current resistance according to VDE 0303/ 4-lead up to 16-lead plastic dual inline package. IEC 60112 comparative tracking index: CTI 175 The elements are mounted on one leadframe providing a Lead (Pb)-free component fixed distance between input and output for highest safety Component in accordance to RoHS 2002/95/EC and requirements. WEEE 2002/96/EC VDE STANDARDS APPLICATIONS These couplers perform safety functions according to the Switch-mode power supplies following equipment standards: Line receiver DIN EN 60747-5-5 Computer peripheral interface Optocoupler for electrical safety requirements Microprocessor system interface IEC EN 60950 Reinforced isolation provides circuit protection against Office machines (applied for reinforced isolation for mains electrical shock (safety class II) voltage 400 V ) RMS Circuits for safe protective separation against electrical VDE 0804 shock according to safety class II (reinforced isolation): Telecommunication apparatus and data processing - for appl. class I - IV at mains voltage 300 V IEC 60065 - for appl. class I - III at mains voltage 600 V Safety for mains-operated electronic and related according to DIN EN 60747-5-5 household apparatus AGENCY APPROVALS UL1577, file no. E76222 system code U, double protection CSA 22.2 bulletin 5A, double protection BSI IEC60950 IEC60065 DIN EN 60747-5-5 FIMKO ORDER INFORMATION PART REMARKS TCED1100 CTR 600 %, DIP-4 TCED1100G CTR 600 %, DIP-4 Note G = leadform 10.16 mm G is not marked on the body. www.vishay.com For technical questions, contact: optocoupler.answers vishay.com Document Number: 83539 798 Rev. 1.8, 16-May-08TCED1100/TCED1100G Optocoupler, Phototransistor Output, Vishay Semiconductors High Gain (1) ABSOLUTE MAXIMUM RATINGS PARAMETER TEST CONDITION SYMBOL VALUE UNIT INPUT Reverse voltage V 6V R Forward current I 60 mA F Forward surge current t 10 s I 1.5 A p FSM Power dissipation P 100 mW diss Junction temperature T 125 C j OUTPUT Collector emitter voltage V 35 V CEO Emitter collector voltage V 7V ECO Collector current I 80 mA C Collector peak current t /T = 0.5, t 10 ms I 100 mA p p CM Power dissipation P 150 mW diss Junction temperature T 125 C j COUPLER Isolation test voltage (RMS) V 5000 V ISO RMS Total power dissipation P 250 mW tot Operating ambient temperature range T - 40 to + 100 C amb Storage temperature range T - 55 to + 125 C stg (2) Soldering temperature 2 mm from case, t 10 s T 260 C sld Notes (1) T = 25 C, unless otherwise specified. amb Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. (2) Refer to wave profile for soldering conditions for through hole devices. ELECTRICAL CHARACTERISTCS PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT INPUT Forward voltage I = 20 mA V 1.15 1.4 V F F Junction capacitance V = 0 V, f = 1 MHz C 50 pF R j OUTPUT Collector emitter voltage I = 1 mA V 32 V C CEO Emitter collector voltage I = 100 A V7V E ECO Collector ermitter cut-off current V = 10 V, I = 0, E = 0 I 15 100 nA CE F CEO COUPLER Collector emitter saturation voltage I = 10 mA, I =5 mA V 1V F C CEsat V = 5 V, I = 10 mA, CE F Cut-off frequency f 10 kHz c R = 100 L Coupling capacitance f = 1 MHz C 0.3 pF k Note T = 25 C, unless otherwise specified. amb Minimum and maximum values are tested requierements. Typical values are characteristics of the device and are the result of engineering evaluations. Typical values are for information only and are not part of the testing requirements. CURRENT TRANSFER RATIO PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT I /I V = 2 V, I = 1 mA TCED1100 CTR 600 800 % C F CE F Document Number: 83539 For technical questions, contact: optocoupler.answers vishay.com www.vishay.com Rev. 1.8, 16-May-08 799