Product Information

TCET1113

TCET1113 electronic component of Vishay

Datasheet
Transistor Output Optocouplers Phototransistor Out Single CTR>100-200%

Manufacturer: Vishay
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.831 ea
Line Total: USD 0.83

7756 - Global Stock
Ships to you between
Tue. 28 May to Thu. 30 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
7659 - WHS 1


Ships to you between Tue. 28 May to Thu. 30 May

MOQ : 1
Multiples : 1

Stock Image

TCET1113
Vishay

1 : USD 0.8694
10 : USD 0.5663
100 : USD 0.3248
500 : USD 0.3091
1000 : USD 0.2765
4000 : USD 0.2596
8000 : USD 0.2584
24000 : USD 0.2536
48000 : USD 0.2427

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Current Transfer Ratio
Output Type
Package / Case
Number of Channels
If - Forward Current
Maximum Collector Current
Maximum Collector Emitter Voltage
Isolation Voltage
Maximum Collector Emitter Saturation Voltage
Vf - Forward Voltage
Vr - Reverse Voltage
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Height
Length
Width
Brand
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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TCET111., TCET111.G www.vishay.com Vishay Semiconductors Optocoupler, Phototransistor Output, High Temperature, 110 C, Rated FEATURES CTR offered in 9 groups C E Isolation materials according to UL 94 V-0 4 3 Pollution degree 2 (DIN / VDE 0110 / resp. IEC 60664) Climatic classification 55 / 100 / 21 (IEC 60068 part 1) Special construction: therefore, extra low coupling 12 capacity of typical 0.2 pF, high common mode rejection AC Low temperature coefficient of CTR Temperature range -40 C to +110 C 17197 4 Rated impulse voltage (transient overvoltage) V = 6 kV IOTM peak LINKS TO ADDITIONAL RESOURCES Isolation test voltage (partial discharge test voltage) V = 1.6 kV pd Related Rated isolation voltage (RMS includes DC ) Documents V = 600 V IOWM RMS DESCRIPTION Rated recurring peak voltage (repetitive) V = 850 V IORM peak The TCET111., TCET111.G consists of a phototransistor Creepage current resistance according to VDE 0303/ optically coupled to a gallium arsenide infrared-emittin g IEC 60112 comparative tracking index: CTI 175 diode in a 4 pin plastic dual inline package. Thickness through insulation 4 mm External creepage distance > 8 mm APPLICATIONS Material categorization: for definitions of compliance Circuits for safe protective separation against electrical please see www.vishay.com/doc 99912 shock according to safety class II (reinforced isolation): for appl. class I to IV at mains voltage 300 V AGENCY APPROVALS for appl. class I to III at mains voltage 600 V according UL to DIN EN 60747-5-5 (VDE 0884), suitable for: cUL - Switch-mode power supplies DIN EN 60747-5-5 (VDE 0884) - Line receiver BSI: EN 62368-1:2014 - Computer peripheral interface - Microprocessor system interface ORDERING INFORMATION DIP-4 T C E T 1 11 - PART NUMBER PACKAGE OPTION 7.62 mm CTR (%) AGENCY CERTIFIED / PACKAGE 10 mA UL, cUL, VDE, BSI 100 to 200 160 to 320 DIP-4 TCET1113 - DIP-4, 400 mil TCET1113G TCET1114G Rev. 2.1, 17-Dec-2020 Document Number: 83546 1 For technical questions, contact: optocoupleranswers vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 TCET111., TCET111.G www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT INPUT Reverse voltage V 6V R Forward current I 60 mA F Forward surge current t 10 s I 1.5 A p FSM OUTPUT Collector emitter voltage V 70 V CEO Emitter collector voltage V 7V ECO Collector current I 50 mA C Collector peak current t /T = 0.5, t 10 ms I 100 mA p p CM COUPLER Isolation test voltage (RMS) t = 1 s V 5000 V ISO RMS Operating ambient temperature range T -40 to +110 C amb Storage temperature range T -55 to +125 C stg (1) Soldering temperature 2 mm from case, 10 s T 260 C sld Notes Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability (1) Refer to wave profile for soldering conditions for through hole devices (DIP) THERMAL CHARACTERISTICS PARAMETER SYMBOL VALUE UNIT LED power dissipation P 70 mW diss T A Output power dissipation P 70 mW diss Maximum LED junction temperature T 125 C CA jmax. Package T C Maximum output die junction temperature T 125 C jmax. EC DC Thermal resistance, junction emitter to board 173 C/W EB T T DE JE JD Thermal resistance, junction emitter to case 149 C/W EC Thermal resistance, junction detector to board 111 C/W DB DB EB Thermal resistance, junction detector to case 127 C/W T DC B Thermal resistance, junction emitter to junction 173 C/W ED detector BA (1) Thermal resistance, board to ambient 197 C/W 19996 BA T A (1) Thermal resistance, case to ambient 4041 C/W CA Notes The thermal model is represented in the thermal network below. Each resistance value given in this model can be used to calculate the temperatures at each node for a given operating condition. The thermal resistance from board to ambient will be dependent on the type of PCB, layout and thickness of copper traces. For a detailed explanation of the thermal model, please reference Vishays Thermal Characteristics of Optocouplers application note (1) For 2 layer FR4 board (4 x 3 x 0.062 ) Rev. 2.1, 17-Dec-2020 Document Number: 83546 2 For technical questions, contact: optocoupleranswers vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
BC
BC COMPONENTS
BC COMPONENTS (VISHAY)
BCC
BEYSCHLAG
DALE
DALE (VISHAY)
DLE
DRALORIC / VISHAY
General Semi
GENERAL SEMI.
GENERAL SEMICONDUCTOR (VISHAY)
GS
HUNTINGTON ELECTRIC
Micro-Measurements (Division of Vishay Precision Group)
ROEDERSTEIN
ROEDERSTEIN / VISHAY
SFERNICE (VISHAY)
SFR
SILICONIX
SILICONIX (VISHAY)
SIX
SPD
SPECTROL
SPECTROL ELECTRONICS
SPP
SPRAGUE (VISHAY)
TECHNO
VIR
Vishay BC Components
Vishay Beyschlag
Vishay Cera-Mite
Vishay Dale
Vishay Draloric
Vishay Electro-Films
Vishay Huntington
Vishay Mills
Vishay Milwaukee
Vishay Polytech
Vishay Roederstein
Vishay Sfernice
Vishay Siliconix
Vishay Spectrol
Vishay Sprague
Vishay Tansitor
Vishay Techno
Vishay Thin Film
Vishay Vitramon
Vishay / BC Components
Vishay / Beyschlag
Vishay / Cera-Mite
Vishay / Dale
Vishay / Draloric
Vishay / Electro-Films
Vishay / Huntington
VISHAY / LITE-ON
Vishay / MCB Industrie
Vishay / Mills
Vishay / Milwaukee
Vishay / Polytech
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Vishay / Sfernice
Vishay / Siliconix
Vishay / Spectrol
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Vishay / Thin Film
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Vishay Dale
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VISHAY FOIL RESISTORS / VPG
Vishay General Semiconductor
Vishay Huntington Electric Inc.
Vishay Intertech
Vishay Micro-Measurements
VISHAY OPTO
Vishay Precision
Vishay Precision Group
Vishay Precision Group Foil Resistors
VISHAY ROEDERSTEIN
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Vishay Semiconductor Diodes Division
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VISHAY SPECIALTY CAPACITORS
Vishay Spectrol
Vishay Sprague
VISHAY TANSITOR
VISHAY TECHNO
Vishay Thin Film
Vishay Vitramon
VISHAY/BC COMPONENTS
Vishay/Beyschlag
Vishay/Dale
Vishay/General Semic
VISHAY/SILICONIX
VishayBC Components
VishayBeyschlag
VishayElectro-Films
VishayGeneral Semiconductor
VishaySemiconductors
VishaySprague
VishayVitramon
VIT
VITRAMON (VISHAY)
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VITROMON
VSC
VSO
VSS

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