Product Information

V10170C-M3/4W

V10170C-M3/4W electronic component of Vishay

Datasheet
Schottky Diodes & Rectifiers 10A 170V TrenchMOS
Manufacturer: Vishay
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

8000: USD 1.0649 ea
Line Total: USD 8519.2

0 - Global Stock
MOQ: 8000  Multiples: 8000
Pack Size: 8000

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Wed. 29 May to Fri. 31 May

MOQ : 8000
Multiples : 8000
8000 : USD 0.9006

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Configuration
Technology
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Vf - Forward Voltage
Ifsm - Forward Surge Current
Ir - Reverse Current
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Operating Temperature Range
Brand
Forward Continuous Current
Max Surge Current
Forward Voltage Drop
Peak Reverse Voltage
Factory Pack Quantity :
Tradename
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Vr - Reverse Voltage
LoadingGif

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Additional Infomation About Product

V10170C-M3 www.vishay.com Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low V = 0.57 V at I = 2.5 A F F FEATURES TMBS Trench MOS Schottky technology TO-220AB Low forward voltage drop, low power losses High efficiency operation Solder dip 275 C max. 10 s, per JESD 22-B106 Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 3 TYPICAL APPLICATIONS 2 1 For use in high frequency DC/DC converters, switching V10170C power supplies, freewheeling diodes, OR-ing diode, and PIN 1 PIN 2 reverse battery protection. CASE PIN 3 MECHANICAL DATA Case: TO-220AB PRIMARY CHARACTERISTICS Molding compound meets UL 94 V-0 flammability rating I 2 x 5 A F(AV) Base P/N-M3 - halogen-free, RoHS-compliant, and V 170 V RRM commercial grade I 80 A FSM Terminals: Matte tin plated leads, solderable per V at I = 5.0 A 0.65 V F F J-STD-002 and JESD 22-B102 T max. 175 C J M3 suffix meets JESD 201 class 1A whisker test Package TO-220AB Polarity: As marked Diode variation Dual common cathode Mounting Torque: 10 in-lbs maximum MAXIMUM RATINGS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL V10170C UNIT Maximum repetitive peak reverse voltage V 170 V RRM per device 10 Maximum average forward rectified current I A F(AV) (fig. 1) per diode 5 Peak forward surge current 8.3 ms single half sine-wave I 80 A FSM superimposed on rated load Voltage rate of change (rated V ) dV/dt 10 000 V/s R Operating junction and storage temperature range T , T -40 to +175 C J STG Revision:01-Dec-16 Document Number: 89940 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000V10170C-M3 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT I = 2.5 A 0.74 - F T = 25 C A I = 5.0 A 0.84 1.03 F (1) Instantaneous forward voltage per diode V V F I = 2.5 A 0.57 - F T = 125 C A I = 5.0 A 0.65 0.74 F T = 25 C 0.3 - A A V = 136 V R T = 125 C 0.9 - mA A (2) Reverse current per diode I R T = 25 C - 90 A A V = 170 V R T = 125 C 1.3 10 mA A Notes (1) Pulse test: 300 s pulse width, 1 % duty cycle (2) Pulse test: Pulse width 20 ms THERMAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL V10170CUNIT per diode 3.0 Typical thermal resistance R C/W JC per device 1.7 ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE TO-220AB V10170C-M3/4W 1.87 4W 50/tube Tube RATINGS AND CHARACTERISTICS CURVES (T = 25 C unless otherwise noted) A 6 4.4 D = 0.8 D = 0.5 4.0 Rth =Rth J-A J-C D = 0.3 5 3.6 D = 0.2 3.2 D = 0.1 D = 1.0 4 2.8 2.4 3 2.0 1.6 2 T 1.2 0.8 1 0.4 D = t /T t p p 0 0.0 0 25 50 75 100 125 150 175 0123456 Case Temperature (C) Average Forward Current (A) Fig. 1 - Maximum Forward Current Derating Curve Fig. 2 - Forward Power Loss Characteristics Per Diode Revision:01-Dec-16 Document Number: 89940 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 Average Forward Rectified Current (A) Average Power Loss (W)

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

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