33 3 V10DM60C www.vishay.com Vishay General Semiconductor Dual Low-Voltage TMBS (Trench MOS Barrier Schottky) Rectifier Ultra Low V = 0.42 V at I = 2.5 A F F FEATURES eSMP Series Available Trench MOS Schottky technology SMPD (TO-263AC) Very low profile - typical height of 1.7 mm Ideal for automated placement K Low forward voltage drop, low power losses High efficiency operation 1 Meets MSL level 1, per J-STD-020, 2 LF maximum peak of 260 C Top View Bottom View AEC-Q101 qualified available: - Automotive ordering code: base P/NHM3 Material categorization: for definitions of compliance Anode 1 K please see www.vishay.com/doc 99912 Cathode Anode 2 TYPICAL APPLICATIONS DESIGN SUPPORT TOOLS AVAILABLE For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection in commercial, industrial, and 3D Models automotive application. PRIMARY CHARACTERISTICS MECHANICAL DATA I 2 x 5 A F(AV) Case: SMPD (TO-263AC) Molding compound meets UL 94 V-0 flammability rating V 60 V RRM Base P/N-M3 - halogen-free, RoHS-compliant I 80 A FSM Base P/NHM3 - halogen-free, RoHS-compliant, and V at I = 5 A (T = 125 C) 0.52 V F F A AEC-Q101 qualified T max. 175 C J Terminals: matte tin plated leads, solderable per Package SMPD (TO-263AC) J-STD-002 and JESD 22-B102 M3 and HM3 suffix meet JESD 201 class 2 whisker test Circuit configuration Common cathode Polarity: as marked MAXIMUM RATINGS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL V10DM60C UNIT Device marking code V10DM60C Maximum repetitive peak reverse voltage V 60 V RRM per device 10 Maximum average forward rectified current (1) I A F(AV) (fig. 1) per diode 5 Peak forward surge current 8.3 ms single half sine-wave I 80 A FSM superimposed on rated load (2) -40 to +175 Operating junction temperature range T J C Storage temperature range T -55 to +175 STG Notes (1) Mounted on infinite heatsink (2) The heat generated must be less than the thermal conductivity from junction-to-ambient: dP /dT < 1/R D J JA Revision: 14-Mar-2019 Document Number: 87579 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 DD D V10DM60C www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT I = 2.5 A 0.52 - F T = 25 C A I = 5 A 0.58 0.66 F (1) Instantaneous forward voltage per diode V V F I = 2.5 A 0.42 - F T = 125 C A I = 5 A 0.52 0.60 F T = 25 C -0.25 A (2) Reverse current at rated V per diode V = 60 V I mA R R R T = 125 C 1.2 7 A Typical junction capacitance 4.0 V, 1 MHz C 570 - pF J Notes (1) Pulse test: 300 s pulse width, 1 % duty cycle (2) Pulse test: Pulse width 5 ms THERMAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL V10DM60C UNIT (1) R 2.5 JC Typical thermal resistance per device C/W (2)(3) R 58 JA Notes (1) Mounted on infinite heatsink (2) The heat generated must be less than the thermal conductivity from junction-to-ambient: dP /dT < 1/R - junction-to-ambient D J JA (3) Free air, without heatsink ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE V10DM60C-M3/I 0.55 I 2000/reel 13 diameter plastic tape and reel (1) V10DM60CHM3/I 0.55 I 2000/reel 13 diameter plastic tape and reel Note (1) AEC-Q101 qualified Revision: 14-Mar-2019 Document Number: 87579 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000