X-On Electronics has gained recognition as a prominent supplier of V20120C-E3/4W Schottky Diodes & Rectifiers across the USA, India, Europe, Australia, and various other global locations. V20120C-E3/4W Schottky Diodes & Rectifiers are a product manufactured by Vishay. We provide cost-effective solutions for Schottky Diodes & Rectifiers, ensuring timely deliveries around the world.

V20120C-E3/4W Vishay

V20120C-E3/4W electronic component of Vishay
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Part No.V20120C-E3/4W
Manufacturer: Vishay
Category: Schottky Diodes & Rectifiers
Description: Schottky Diodes & Rectifiers 20 Amp 120 Volt Dual TrenchMOS
Datasheet: V20120C-E3/4W Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
8000: USD 0.7188 ea
Line Total: USD 5750.4 
Availability - 0
MOQ: 8000  Multiples: 8000
Pack Size: 8000
Availability Price Quantity
0
Ship by Thu. 14 Nov to Tue. 19 Nov
MOQ : 1
Multiples : 1
1 : USD 1.5859
10 : USD 1.3211
50 : USD 1.1888
100 : USD 1.0565
500 : USD 0.919
1000 : USD 0.8508

0
Ship by Wed. 13 Nov to Fri. 15 Nov
MOQ : 8000
Multiples : 8000
8000 : USD 0.7188

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Configuration
Technology
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Vf - Forward Voltage
Ifsm - Forward Surge Current
Ir - Reverse Current
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Operating Temperature Range
Brand
Forward Continuous Current
Max Surge Current
Forward Voltage Drop
Maximum Reverse Leakage Current
Peak Reverse Voltage
Factory Pack Quantity :
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Type
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We are delighted to provide the V20120C-E3/4W from our Schottky Diodes & Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the V20120C-E3/4W and other electronic components in the Schottky Diodes & Rectifiers category and beyond.

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V20120C-E3, VF20120C-E3, VB20120C-E3, VI20120C-E3 www.vishay.com Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low V = 0.54 V at I = 5 A F F FEATURES TMBS TO-220AB ITO-220AB Trench MOS Schottky technology Low forward voltage drop, low power losses High efficiency operation Low thermal resistance Meets MSL level 1, per J-STD-020, LF maximum peak of 245 C (for TO-263AB package) 3 3 2 2 1 Solder bath temperature 275 C maximum, 10 s, per V20120C 1 VF20120C JESD 22-B106 (for TO-220AB, ITO-220AB, and PIN 1 PIN 1 PIN 2 PIN 2 TO-262AA package) PIN 3 CASE PIN 3 Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 2 D PAK (TO-263AB) TO-262AA K K TYPICAL APPLICATIONS For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, DC/DC 2 converters and reverse battery protection. 1 3 2 VB20120C VI20120C 1 MECHANICAL DATA PIN 1 K PIN 1 PIN 2 2 Case: TO-220AB, ITO-220AB, DPAK (TO-263AB), PIN 2 HEATSINK K PIN 3 and TO-262AA click logo to get started Molding compound meets UL 94 V-0 flammability rating DESIGN SUPPORT TOOLS Base P/N-E3 - RoHS-compliant, commercial grade Terminals: matte tin plated leads, solderable per Models Available J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test PRIMARY CHARACTERISTICS Polarity: as marked I 2 x 10 A F(AV) Mounting Torque: 10 in-lbs maximum V 120 V RRM I 120 A FSM V at I = 10 A 0.64 V F F T max. 150 C J TO-220AB, ITO-220AB, Package 2 D PAK (TO-263AB), TO-262AA Circuit configuration Common cathode MAXIMUM RATINGS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL V20120C VF20120C VB20120C VI20120C UNIT Maximum repetitive peak reverse voltage V 120 V RRM per device 20 Maximum average forward rectified current (fig. 1) I A F(AV) per diode 10 Peak forward surge current 8.3 ms single half sine-wave 120 A I FSM superimposed on rated load per diode Non-repetitive avalanche energy at T = 25 C, L = 60 mH per diode E 80 mJ J AS Peak repetitive reverse current at t = 2 s, 1 kHz,T = 38 C 2 C p J I 0.5 A RRM per diode Voltage rate of change (rated V ) dV/dt 10 000 V/s R Isolation voltage (ITO-220AB only) from terminal to heatsink t = 1 min V 1500 V AC Operating junction and storage temperature range T , T -40 to +150 C J STG Revision: 18-Jun-2018 Document Number: 89040 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 V20120C-E3, VF20120C-E3, VB20120C-E3, VI20120C-E3 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT Breakdown voltage I = 1.0 mA T = 25 C V 120 (minimum) - V R A BR I = 5 A 0.62 - F T = 25 C A I = 10 A 0.81 0.90 Instantaneous forward voltage F (1) V V F per diode I = 5 A 0.54 - F T = 125 C A I = 10 A 0.64 0.72 F T = 25 C 8- A A V = 90 V R T = 125 C 6- mA A (2) Reverse current per diode I R T = 25 C - 700 A A V = 120 V R T = 125 C 14 45 mA A Notes (1) Pulse test: 300 s pulse width, 1 % duty cycle (2) Pulse test: Pulse width 40 ms THERMAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL V20120CVF20120CVB20120CVI20120CUNIT Typical thermal resistance per diode R 2.8 5.0 2.8 2.8 C/W JC ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE TO-220AB V20120C-E3/4W 1.88 4W 50/tube Tube ITO-220AB VF20120C-E3/4W 1.75 4W 50/tube Tube TO-263AB VB20120C-E3/4W 1.37 4W 50/tube Tube TO-263AB VB20120C-E3/8W 1.37 8W 800/reel Tape and reel TO-262AA VI20120C-E3/4W 1.45 4W 50/tube Tube RATINGS AND CHARACTERISTICS CURVES (T = 25 C unless otherwise noted) A 25 10 Resistive or Inductive Load V(B,I)20120C D = 0.8 D = 0.5 20 8 D = 0.3 15 6 VF20120C D = 0.2 D = 1.0 D = 0.1 10 4 T 5 2 D = t /T t p p Mounted on Specific Heatsink 0 0 0 25 50 75 100 125 150 175 0246 8 10 12 Case Temperature (C) Average Forward Current (A) Fig. 1 - Maximum Forward Current Derating Curve Fig. 2 - Forward Power Loss Characteristics Per Diode Revision: 18-Jun-2018 Document Number: 89040 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 Average Forward Rectified Current (A) Average Power Loss (W)

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8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
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