333 3 V20PL50-M3 www.vishay.com Vishay General Semiconductor High Current Density Surface Mount TMBS (Trench MOS Barrier Schottky) Rectifier Ultra Low V = 0.29 V at I = 5 A F F FEATURES eSMP Series Very low profile - typical height of 1.1 mm Ideal for automated placement K Trench MOS Schottky technology Low forward voltage drop, low power losses 1 High efficiency operation 2 Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C SMPC (TO-277A) Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 K Anode 1 Anode 2 Cathode TYPICAL APPLICATIONS For use in low voltage high frequency DC/DC converters, PRIMARY CHARACTERISTICS freewheeling, and polarity protection applications. I 20 A F(AV) V 50 V RRM MECHANICAL DATA I 240 A FSM Case: SMPC (TO-277A) V at I = 20 A (T = 125 C) 0.46 V F F A Molding compound meets UL 94 V-0 flammability rating T max. 150 C J Base P/N-M3 - halogen-free, RoHS-compliant, and Package SMPC (TO-277A) commercial grade Circuit configuration Single Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 2 whisker test ADDITIONAL RESOURCES 3D Models MAXIMUM RATINGS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL V20PL50 UNIT Device marking code 20L5 Maximum repetitive peak reverse voltage V 50 V RRM (1) I 20 F Maximum average forward rectified current (fig. 1) A (2) I 5.5 F Maximum DC reverse voltage V 40 V DC Peak forward surge current 8.3 ms single half sine-wave I 240 A FSM superimposed on rated load Operating junction and storage temperature range T , T -40 to +150 C J STG Notes (1) Mounted on 30 mm x 30 mm pad areas aluminum PCB (2) Free air, mounted on recommended copper pad area Revision: 24-Sep-2019 Document Number: 87706 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 DDD DV20PL50-M3 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT I = 5.0 A 0.40 - F I = 10 A T = 25 C 0.45 - F A I = 20 A 0.51 0.59 F (1) Instantaneous forward voltage V V F I = 5.0 A 0.29 - F I = 10 A T = 125 C 0.36 - F A I = 20 A 0.46 0.54 F T = 25 C 0.02 - A V = 40 V mA R T = 125 C 15 - A (2) Reverse current I R T = 25 C - 3 A V = 50 V mA R T = 125 C 20 60 A Notes (1) Pulse test: 300 s pulse width, 1 % duty cycle (2) Pulse test: pulse width 5 ms THERMAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL V20PL50UNIT (1)(2) R 68 JA Typical thermal resistance C/W (3) R 4 JM Notes (1) Free air, mounted on recommended copper pad area thermal resistance R - junction to ambient JA (2) The heat generated must be less than the thermal conductivity from junction-to-ambient: dP /dT < 1/R D J JA (3) Mounted on 30 mm x 30 mm 2 oz. pad PCB thermal resistance R - junction to mount measured at cathode side JM ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE V20PL50-M3/86A 0.10 86A 1500 7 diameter plastic tape and reel V20PL50-M3/87A 0.10 87A 6500 13 diameter plastic tape and reel Revision: 24-Sep-2019 Document Number: 87706 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000