X-On Electronics has gained recognition as a prominent supplier of V30DM120CHM3/I Schottky Diodes & Rectifiers across the USA, India, Europe, Australia, and various other global locations. V30DM120CHM3/I Schottky Diodes & Rectifiers are a product manufactured by Vishay. We provide cost-effective solutions for Schottky Diodes & Rectifiers, ensuring timely deliveries around the world.

V30DM120CHM3/I Vishay

V30DM120CHM3/I electronic component of Vishay
V30DM120CHM3/I Vishay
V30DM120CHM3/I Schottky Diodes & Rectifiers
V30DM120CHM3/I  Semiconductors

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Part No. V30DM120CHM3/I
Manufacturer: Vishay
Category: Schottky Diodes & Rectifiers
Description: Schottky Diodes & Rectifiers 30A, 120V, SMPD, TRENCH SKY RECT.
Datasheet: V30DM120CHM3/I Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.8074 ea
Line Total: USD 1.81 
Availability - 1638
Ship by Mon. 12 May to Wed. 14 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1638
Ship by Mon. 12 May to Wed. 14 May
MOQ : 1
Multiples : 1
1 : USD 1.8074
10 : USD 1.4377
100 : USD 1.06
500 : USD 0.9156
1000 : USD 0.7668
2000 : USD 0.7328
4000 : USD 0.7032
24000 : USD 0.6862

   
Manufacturer
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RoHS - XON
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Product
Mounting Style
Package / Case
Configuration
Technology
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Vf - Forward Voltage
Ifsm - Forward Surge Current
Ir - Reverse Current
Minimum Operating Temperature
Maximum Operating Temperature
Series
Qualification
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Brand
Product Type
Factory Pack Quantity :
Subcategory
Tradename
Cnhts
Hts Code
Mxhts
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the V30DM120CHM3/I from our Schottky Diodes & Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the V30DM120CHM3/I and other electronic components in the Schottky Diodes & Rectifiers category and beyond.

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333 3 V30DM120C www.vishay.com Vishay General Semiconductor Dual TMBS (Trench MOS Barrier Schottky) Rectifier Ultra Low V = 0.51 V at I = 5 A F F FEATURES eSMP Series Available Trench MOS Schottky technology SMPD (TO-263AC) Very low profile - typical height of 1.7 mm Ideal for automated placement K Low forward voltage drop, low power losses High efficiency operation 1 AEC-Q101 qualified available: 2 - Automotive ordering code: base P/NHM3 Top View Bottom View Meets MSL level 1, per J-STD-020, LF maximum peak V30DM120C of 260 C Anode 1 K Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 Cathode Anode 2 TYPICAL APPLICATIONS LINKS TO ADDITIONAL RESOURCES For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection in commercial, industrial, and 3D Models automotive application. MECHANICAL DATA PRIMARY CHARACTERISTICS Case: SMPD (TO-263AC) I 2 x 15 A F(AV) Molding compound meets UL 94 V-0 flammability rating V 120 V RRM Base P/N-M3 - halogen-free, RoHS-compliant I 150 A FSM Base P/NHM3 - halogen-free, RoHS-compliant, and V at I = 15 A (T = 125 C) 0.67 V F F A AEC-Q101 qualified T max. 175 C J Terminals: matte tin plated leads, solderable per Package SMPD (TO-263AC) J-STD-002 and JESD 22-B102 Circuit configuration Common cathode M3 and HM3 suffix meets JESD 201 class 2 whisker test Polarity: as marked MAXIMUM RATINGS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL V30DM120C UNIT Maximum repetitive peak reverse voltage V 120 V RRM per device 30 Maximum average forward rectified current I A F(AV) (fig. 1) per diode 15 Peak forward surge current 10 ms single half sine-wave I 150 A FSM superimposed on rated load Voltage rate of change (rated V ) dV/dt 10 000 V/s R Operating junction and storage temperature range T , T -40 to +175 C J STG Revision: 27-Mar-2020 Document Number: 89990 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 DDD D V30DM120C www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT I = 5 A 0.59 - F I = 7.5 A T = 25 C 0.66 - F A I = 15 A 0.88 0.97 F (1) Instantaneous forward voltage per diode V V F I = 5 A 0.51 - F I = 7.5 A T = 125 C 0.56 - F A I = 15 A 0.67 0.76 F T = 25 C 5- A A V = 90 V R T = 125 C 3.1 - mA A (2) Reverse current per diode I R T = 25 C - 800 A A V = 120 V R T = 125 C 6 27 mA A Notes (1) Pulse test: 300 s pulse width, 1 % duty cycle (2) Pulse test: Pulse width 5 ms THERMAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL V30DM120CUNIT per diode 2.2 R JC Typical thermal resistance per device 1.2 C/W (1)(2) per device R 48 JA Notes (1) The heat generated must be less than the thermal conductivity from junction-to-ambient: dP /dT < 1/R D J JA (2) Free air, without heatsink ORDERING INFORMATION (Example) UNIT WEIGHT PACKAGE PREFERRED P/N PACKAGE CODE BASE QUANTITY DELIVERY MODE (g) SMPD (TO-263AC) V30DM120C-M3/I 0.55 I 2000/reel 13 diameter plastic tape and reel (1) SMPD (TO-263AC) V30DM120CHM3/I 0.55 I 2000/reel 13 diameter plastic tape and reel Note (1) AEC-Q101 qualified RATINGS AND CHARACTERISTICS CURVES (T = 25 C unless otherwise noted) A 35 14.0 D = 0.8 R = 2.2 C/W JC 30 12.0 D = 0.5 D = 0.3 25 10.0 D = 1.0 D = 0.2 fi 20 8.0 D = 0.1 15 6.0 T 10 R 4.0 = 48 C/W JA 5 2.0 D = t /T t p p 0 0.0 0 25 50 75 100 125 150 175 02468 10 12 Average Forward Current (A) Case Temperature (C) Fig. 1 - Forward Current Derating Curve Fig. 2 - Forward Power Loss Characteristics Per Diode Revision: 27-Mar-2020 Document Number: 89990 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 Average Forward Rectied Current (A) Average Power Loss (W)

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8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
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