V60M120C www.vishay.com Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low V = 0.43 V at I = 5 A F F FEATURES TMBS Trench MOS Schottky technology TO-220AB Low forward voltage drop, low power losses High efficiency operation Solder dip 275 C max. 10 s, per JESD 22-B106 Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 3 2 TYPICAL APPLICATIONS 1 V60M120C For use in high frequency DC/DC converters, switching PIN 1 PIN 2 power supplies, freewheeling diodes, OR-ing diode, and CASE PIN 3 reverse battery protection. MECHANICAL DATA PRIMARY CHARACTERISTICS Case: TO-220AB Molding compound meets UL 94 V-0 flammability rating I 2 x 30 A F(AV) Base P/N-M3 - halogen-free, RoHS-compliant, and V 120 V RRM commercial grade I 300 A FSM Terminals: matte tin plated leads, solderable per V at I = 30 A (T = 125 C) 0.69 V F F A J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test T max. 175 C J Polarity: as marked Package TO-220AB Mounting Torque: 10 in-lbs maximum Diode variations Common cathode MAXIMUM RATINGS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL V60M120C UNIT Maximum repetitive peak reverse voltage V 120 V RRM per device 60 Maximum average forward rectified current (fig. 1) I F(AV) per diode 30 A Peak forward surge current 8.3 ms single half sine-wave I 300 FSM superimposed on rated load per diode Voltage rate of change (rated V ) dV/dt 10 000 V/s R Operating junction and storage temperature range T , T -40 to +175 C J STG Revision: 09-Nov-17 Document Number: 87781 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 V60M120C www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS PARAMETER TEST CONDITIONSSYMBOLTYP.MAX.UNIT I = 5 A 0.51 - F I = 15 A T = 25 C 0.68 - F A I = 30 A 0.86 0.97 F (1) Instantaneous forward voltage per diode V V F I = 5 A 0.43 - F I = 15 A T = 125 C 0.58 - F A I = 30 A 0.69 0.77 F T = 25 C 75 - A A V = 90 V R T = 125 C 6.4 - mA A (2) Reverse current per diode I R T = 25 C - 500 A A V = 120 V R T = 125 C 10 35 mA A Notes (1) Pulse test: 300 s pulse width, 1 % duty cycle (2) Pulse test: Pulse width 5 ms THERMAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL V60M120CUNIT per diode 1.0 R JC (1) Typical thermal resistance per device 0.7 C/W (2) per device R 52 JA Notes (1) The heat generated must be less than the thermal conductivity from junction-to-ambient dP /dT < 1/R D J JA (2) Free air, without heatsink ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE TO-220AB V60M120C-M3/4W 1.89 4W 50/tube Tube RATINGS AND CHARACTERISTICS CURVES (T = 25 C unless otherwise noted) A 70 22 D = 0.8 D = 0.5 With heatsink, Rth = 0.7 C/W 20 JC 60 D = 0.3 18 D = 0.2 50 16 D = 1.0 D = 0.1 14 40 12 10 30 8 T 20 6 Free air, without heatsink, 4 10 Rth = 52 C/W JA D = t /T 2 p t p 0 0 0 25 50 75 100 125 150 175 0 4 8 12 16 20 24 28 32 36 Case Temperature (C) Average Forward Current (A) Fig. 1 - Maximum Forward Current Derating Curve Fig. 2 - Forward Power Loss Characteristics Per Diode (D = Duty Cycle = 0.5) Revision: 09-Nov-17 Document Number: 87781 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 Average Forward Rectified Current (A) Average Power Loss (W)