333 3 V8PL6-M3 www.vishay.com Vishay General Semiconductor High Current Density Surface Mount TMBS (Trench MOS Barrier Schottky) Rectifier Ultra Low V = 0.34 V at I = 4 A F F FEATURES eSMP Series Very low profile - typical height of 1.1 mm Ideal for automated placement K Trench MOS Schottky technology Low forward voltage drop, low power losses 1 High efficiency operation 2 Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C SMPC (TO-277A) Material categorization: for definitions of compliance K Anode 1 please see www.vishay.com/doc 99912 Anode 2 Cathode TYPICAL APPLICATIONS ADDITIONAL RESOURCES For use in low voltage high frequency inverters, freewheeling, DC/DC converters, and polarity protection applications. 3D Models MECHANICAL DATA PRIMARY CHARACTERISTICS Case: SMPC (TO-277A) I 8.0 A F(AV) Molding compound meets UL 94 V-0 flammability rating V 60 V RRM Base P/N-M3 - halogen-free, RoHS-compliant, and I 140 A FSM commercial grade V at I = 8.0 A (T = 125 C) 0.42 V F F A Terminals: matte tin plated leads, solderable per T max. 150 C J J-STD-002 and JESD 22-B102 Package SMPC (TO-277A) M3 suffix meets JESD 201 class 2 whisker test Circuit configuration Single MAXIMUM RATINGS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL V8PL6-M3 UNIT Device marking code 8L6 Maximum repetitive peak reverse voltage V 60 V RRM (1) I 8.0 F Maximum average forward rectified current (fig. 1) A (2) I 4.3 F Peak forward surge current 10 ms single half sine-wave I 140 A FSM superimposed on rated load Voltage rate of change (rated V ) dV/dt 10 000 V/s R Operating junction and storage temperature range T , T -40 to +150 C J STG Notes (1) Mounted on 30 mm x 30 mm pad areas aluminum PCB (2) Free air, mounted on recommended copper pad area Revision: 30-Oct-2019 Document Number: 87725 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 DDD D V8PL6-M3 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT I = 4.0 A 0.43 - F T = 25 C A I = 8.0 A 0.50 0.58 F (1) Instantaneous forward voltage V V F I = 4.0 A 0.34 - F T = 125 C A I = 8.0 A 0.42 0.52 F T = 25 C -2.4 A (2) Reverse current V = 60 V I mA R R T = 125 C 21 55 A Notes (1) Pulse test: 300 s pulse width, 1 % duty cycle (2) Pulse test: Pulse width 5 ms THERMAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL V8PL6-M3UNIT (1) (2) R 75 JA Typical thermal resistance C/W (3) R 4 JM Notes (1) Free air, mounted on recommended copper pad area thermal resistance R - junction-to-ambient JA (2) The heat generated must be less than the thermal conductivity from junction-to-ambient: dP /dT < 1/R D J JA (3) Mounted on 30 mm x 30 mm Al PCB thermal resistance R - junction-to-mount JM ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE V8PL6-M3/86A 0.10 86A 1500 7 diameter plastic tape and reel V8PL6-M3/87A 0.10 87A 6500 13 diameter plastic tape and reel RATINGS AND CHARACTERISTICS CURVES (T = 25 C unless otherwise noted) A 9 5 o o D = 0.8 T = 132 C, R = 4 C/W M thJM 8 D = 0.5 4 7 D = 0.3 6 D = 0.2 D = 1.0 fi 3 5 o o T = 25 C, R = 75 C/W A thJA D = 0.1 4 2 T 3 2 1 1 D = t /T t p p 0 0 0123456789 025 50 75 100 125 150 Average Forward Current (A) Mount Temperature (C) Fig. 1 - Maximum Forward Current Derating Curve Fig. 2 - Forward Power Loss Characteristics Revision: 30-Oct-2019 Document Number: 87725 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 Average Forward Rectied Current (A) Average Power Loss (W)